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    TRANSISTOR M32 Search Results

    TRANSISTOR M32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    depletion MOSFET

    Abstract: n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor


    Original     		PDF BSD22 OT143 depletion MOSFET n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel

    Untitled

    Abstract: No abstract text available
    Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general


    Original     		PDF CTLT8099-M322S TLM322S 100mA, 100mA 100MHz 10-October

    Untitled

    Abstract: No abstract text available
    Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general


    Original     		PDF CTLT8099-M322S CTLT8099-M322S TLM322S 100mA, 100mA 100MHz 29-March

    Untitled

    Abstract: No abstract text available
    Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general


    Original     		PDF CTLT8099-M322S CTLT8099-M322S TLM322S 100mA, 100mA 100MHz 10-October

    M32 diode

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2713GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.


    Original     		PDF PA2713GR PA2713GR 10ems, M32 diode

    Transistor Equivalent m32

    Abstract: uPA1772
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1772 SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1772 is Dual P-Channel MOS Field Effect Transistor designed for power management applications of portable machines. 8 5 1 : Source 1


    Original     		PDF PA1772 PA1772 PA1772G Transistor Equivalent m32 uPA1772

    marking KE2

    Abstract: 7lnc marking CS
    Text: I AdLib OCR Evaluation NEC ELECMON DEVICE DATA SHEET SILICON TRANSISTOR GN1F4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistors Built-in TYPE 2.1±0 .1 B 1.25±0.1 9 2 0 Complementary to GA1 F4M


    Original     		PDF

    transistor m32

    Abstract: MMBTA92 MMBTA92LT1 MMBTA93 MMBTA93LT1
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon MMBTA92LT1 MMBTA93LT1 3 COLLECTOR 1 BASE MAXIMUM RATINGS Rating 3 2 EMITTER Symbol Value MMBTA92 MMBTA93 1 Unit Collector–Emitter Voltage V CEO –300 –200 Vdc Collector–Base Voltage V CBO


    Original     		PDF MMBTA92LT1 MMBTA93LT1 MMBTA92 MMBTA93 236AB) transistor m32 MMBTA92LT1 MMBTA93 MMBTA93LT1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistor PNP Silicon MMBTA92LT1 MMBTA93LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value MMBTA92 MMBTA93 1 Unit Collector–Emitter Voltage V CEO –300 –200 Vdc Collector–Base Voltage V CBO –300 –200 Vdc Emitter–Base Voltage


    Original     		PDF MMBTA92LT1 MMBTA93LT1 MMBTA92 MMBTA93 236AB)

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    Untitled

    Abstract: No abstract text available
    Text: io ducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BLX92A FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLX92A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V


    Original     		PDF BLX92A BLX92A -M-32UNC 100mA

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    30591

    Abstract: 30382 PWM MODIFIED SINE WAVE INVERTER CIRCUIT DIAGRAM 30381 solve three phase inverter in 180 degree 29935 32165 32-748
    Text: APPLICATION NOTE M32C/83 Group Concept of the Three-phase Motor Control Program using Intelligent I/O functions 1.0 Abstract This application note describes the concept of the three-phase motor control waveform output program using the function 2 and 3 of intelligent I/O.


    Original     		PDF M32C/83 REJ05B0261-0100Z/Rev 30591 30382 PWM MODIFIED SINE WAVE INVERTER CIRCUIT DIAGRAM 30381 solve three phase inverter in 180 degree 29935 32165 32-748

    30591

    Abstract: 034Eh angle phase control TA210
    Text: APPLICATION NOTE M32C/83 Group Concept of the Three-phase Motor Control Program REJ05B0147-0120Z Rev.1.20 Jul 25, 2003 1. Abstract This application note describes the how to use three-phase motor control timer function, and application example. 2. Introduction


    Original     		PDF M32C/83 REJ05B0147-0120Z 30591 034Eh angle phase control TA210

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    FX3U-48M

    Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
    Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)


    Original     		PDF D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    EZ328

    Abstract: 4x4 matrix keypad 4x4 matrix keypad operation 4x4 matrix keypad and diagram 4x4 matrix keypad c keypad 4x4 8 pin interfacing keyboard matrix datasheet for 4x4 keyboard 4x4 matrix keypad block diagram Matrix keyboard key code
    Text: Order this document by TBD DragonBall Operation Preliminary Application Note Minimum I/O to Matrix Keyboard with DragonBallTM EZ328 INTRODUCTION This note describes an method of interfacing a matrix keyboard to EZ328 using minimum number of I/O ports. We use a 4x4 matrix keypad as an example. It requires only five I/O ports. In general, it takes n+1 ports to


    Original     		PDF EZ328 EZ328 0x00080000) MC68328 4x4 matrix keypad 4x4 matrix keypad operation 4x4 matrix keypad and diagram 4x4 matrix keypad c keypad 4x4 8 pin interfacing keyboard matrix datasheet for 4x4 keyboard 4x4 matrix keypad block diagram Matrix keyboard key code

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    40AIA

    Abstract: FN1F4M
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters Resistors Built-in TYPE 2 .8 ± 0.2 1.5 R-, = 2 2 k £ 2 R 2 = 22 k£2 • Complementary to FA1F4M


    OCR Scan     		PDF TC-1658A 1987M 40AIA FN1F4M

    depletion MOSFET

    Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ
    Text: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.


    OCR Scan     		PDF BSD22 OT-143 7Z90790 depletion MOSFET BSD22 n mosfet depletion transistor MARKING CODE RJ

    aif4m

    Abstract: marking h06 5946A aif4m k JT MARKING 5P J TRANSISTOR MARKING
    Text: 7 s— S • — h- Com pound Transistor FIMI F 4 M > 1-^ t£ÈfcF*9Ü c P N P x n ÿHBS # e : mm a 7 o ^ M x f â i / t £ | * | j l L ( R x = 22 k û , t > 1 ~a '£ 2 .8 ± 0.2 1.5 R 2 = 22 kQ) o.65-8:i5 iC J. o FA1F4M t =? > 7° 'J / > U X " i t ffl T" £ i f c


    OCR Scan     		PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300