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    TRANSISTOR M28S Search Results

    TRANSISTOR M28S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M28S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M28S

    Abstract: transistor m28s NPN Silicon Epitaxial Planar Transistor
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z High DC current gain. M28S Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23 ORDERING INFORMATION


    Original     		OT-23 BL/SSSTC058 3000/Tape M28S transistor m28s NPN Silicon Epitaxial Planar Transistor PDF

    M28S Equivalent

    Abstract: transistor m28s M28S
    Text: DC COMPONENTS CO., LTD. M28S DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose "Speech Synthesizer" Voice ROM IC audio output driver stage amplifier applications. TO-92 Pinning


    Original     		600mA, M28S Equivalent transistor m28s M28S PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1  FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation  3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original     		OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K QW-R201-015 PDF

    M28S

    Abstract: M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio output driver amplifier * General purpose switch


    Original     		OT-23 M28SL M28SG M28SL-x-AE3-R M28SL-x-T92-B M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28SL-x-T92-K M28SG-x-AE3-R M28S M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92 PDF

    M28S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original     		OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K M28S PDF

    M28S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original     		OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S PDF

    M28S

    Abstract: transistor m28s
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


    Original     		OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S transistor m28s PDF

    transistor m28s

    Abstract: No abstract text available
    Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE


    Original     		QW-R201-015 transistor m28s PDF

    M28S

    Abstract: transistor m28s
    Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE


    Original     		600mA QW-R201-015 M28S transistor m28s PDF

    Untitled

    Abstract: No abstract text available
    Text: M28S SEMICONDUCTOR FORWARD INTBRNAUONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Package: TO-92 * High Dc Current Gain Hfe=1000 * Collector Dissipation Pc=lW ABSOLUTE MAXIMUM RATINGS a t Tamb=25*C


    OCR Scan     		100uA 100mA 800mA 800mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 M28S TRANSISTOR NPN 1.EMITTER FEATURES z High DC Current Gain and Large Current Capability 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		100mA 300mA 500mA 600mA 30MHz PDF

    M28ST

    Abstract: No abstract text available
    Text: M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE 1 Product-Rank M28ST-B


    Original     		M28ST M28ST-B M28ST-C M28ST-D 100mA 300mA 29-May-2012 600mA, 30MHz M28ST PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURE Power dissipation mW (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: 1.25 A Collector-base voltage


    Original     		OT-23 OT-23 100mA 300mA 500mA 600mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage


    Original     		OT-23 100mA 300mA 500mA 600mA, PDF

    M28S

    Abstract: M28S Equivalent m28s transistor
    Text: M28S M28S TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 0.625 PCM: 2. COLLECTOR W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ:


    Original     		100mA 300mA 500mA 600mA, 30MHz M28S M28S Equivalent m28s transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M28S SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO:


    Original     		OT-23 OT-23 100mA 300mA 500mA 600mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD M28S NPN SILICON TRANSISTOR AU DI O OU T PU T DRI V ER AM PLI FI ER 1 ̈ FEAT U RES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation ̈ 3 APPLI CAT I ON 1 * Audio Output Driver Amplifier * General Purpose Switch


    Original     		OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SG-x-AE3-R PDF

    M28S

    Abstract: No abstract text available
    Text: M C C TO-92 Plastic-Encapsulate Transistors M28S TRANSISTOR NPN FEATURES stlon P cm: T O -9 2 1 .E M IT T E R IcM: • M 2 .C O L LE C TO R 0.625W (Tamb=25”C ) 1A # * » * voltage V (BR)CBO: 4 0 V 3 . BASE H M M d p i d storage Junction tem perature range


    OCR Scan     		PDF

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


    Original     		OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent PDF

    M28S

    Abstract: HM28S transistor m28s transistor NPN TO-92 Vebo6v
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR M28S 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-01 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2


    Original     		100mm C060AJ-01 M28SHM28S 850mW 100mA 300mA 500mA 600mAIB M28S HM28S transistor m28s transistor NPN TO-92 Vebo6v PDF

    M28S

    Abstract: M28S Equivalent 10VDC
    Text: M28S Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC


    Original     		625Watts -55OC 100mAdc, 300mAdc, 500mAdc, 600mAdc, 20mAdc) 10Vdc, 50mAdc, 30MHz) M28S M28S Equivalent 10VDC PDF

    M28S

    Abstract: M28S Equivalent transistor m28s
    Text: MCC TM Micro Commercial Components M28S M28S-B M28S-C M28S-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.625Watts of Power Dissipation. Collector-current 1.0A


    Original     		M28S-B M28S-C M28S-D 625Watts -55OC M28S M28S Equivalent transistor m28s PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF