Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR M12 Search Results

    TRANSISTOR M12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking .H22

    Abstract: 2SJ647 transistor NEC 2500
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm PACKAGE 2SJ647 SC-70 (SSP) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V ID(DC) m0.4


    Original     		PDF 2SJ647 2SJ647 marking .H22 transistor NEC 2500

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet µPA2812T1L P-channel MOS FIELD EFFECT TRANSISTOR R07DS0762EJ0100 Rev.1.00 May 31, 2012 Description The µPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2812T1L R07DS0762EJ0100 PA2812T1L PA2812T1L-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2812T1L P-channel MOS FIELD EFFECT TRANSISTOR R07DS0762EJ0100 Rev.1.00 May 31, 2012 Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


    Original     		PDF PA2812T1L R07DS0762EJ0100 PA2812T1L PA2812T1L-E2-AT

    N0400P-ZK

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N0400P SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. ORDERING INFORMATION PART NUMBER N0400P-ZK-E1-AY


    Original     		PDF N0400P N0400P N0400P-ZK-E1-AY N0400P-ZK-E2-AY O-252 O-252) N0400P-ZK

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet N0400P R07DS0500EJ0200 Rev.2.00 Aug 19, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available


    Original     		PDF N0400P R07DS0500EJ0200 N0400P N0400P-ZK-E1-AY N0400P-ZK-E2-AY O-252

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet N0400P R07DS0500EJ0200 Rev.2.00 Aug 19, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications. Features • 2.5 V drive available


    Original     		PDF N0400P R07DS0500EJ0200 N0400P N0400P-ZK-E1-AY N0400P-ZK-E2-AY O-252

    2SJ601

    Abstract: M2SJ601 2SJ601-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PART NUMBER PACKAGE 2SJ601 TO-251 MP-3 2SJ601-Z


    Original     		PDF 2SJ601 2SJ601 O-251 2SJ601-Z O-252 O-251/TO-252 O-251) M2SJ601 2SJ601-Z

    LLE103101

    Abstract: LLE305000 LLE205100 honeywell 940 LLE101000 LLE102101 LLE101101 LLE102000 LLE103000 LLE105000
    Text: LLE Series Liquid level sensors DESCRIPTION The enhanced series of liquid level sensors incorporates a the dome to the photo-transistor. When liquid covers the photo-transistor trigger which provides a digital output that dome, the effective refractive index at the dome-liquid


    Original     		PDF 100437-EN LLE103101 LLE305000 LLE205100 honeywell 940 LLE101000 LLE102101 LLE101101 LLE102000 LLE103000 LLE105000

    NEC JAPAN 282 110 01

    Abstract: 2SJ690 2SJ69 2SJ690-T1B-AT
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ690 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SJ690 is a P-channel MOSFET designed for power switch of portable machine and so on. 0.4 +0.1 –0.05 +0.1 0.65–0.15


    Original     		PDF 2SJ690 2SJ690 2SJ690-T1B-AT SC-96 M8E0909) NEC JAPAN 282 110 01 2SJ69 2SJ690-T1B-AT

    D1563

    Abstract: xg transistor
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm +0.1 0.65–0.15 0.16+0.1 –0.06 • Can be driven by a 1.8 V power source • Low on-state resistance


    Original     		PDF 2SJ621 2SJ621 D1563 xg transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2734GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2734GR is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. 8 5 1, 2, 3


    Original     		PDF PA2734GR PA2734GR

    2SJ598 equivalent

    Abstract: 2SJ598 2SJ598-Z 2sJ598 transistor M2SJ598
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PART NUMBER PACKAGE 2SJ598 TO-251 MP-3 2SJ598-Z


    Original     		PDF 2SJ598 2SJ598 O-251 2SJ598-Z O-252 O-251/TO-252 O-251) 2SJ598 equivalent 2SJ598-Z 2sJ598 transistor M2SJ598

    PA2730TP

    Abstract: power mos fet pa2730
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2730TP SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery


    Original     		PDF PA2730TP PA2730TP power mos fet pa2730

    N0100P

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N0100P P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The N0100P is a switching device, which can be driven directly by a 1.8 V power source. This N0100P features a low on-state resistance and excellent switching


    Original     		PDF N0100P N0100P M8E0909E)

    MARKING H1

    Abstract: 2SJ648 SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent


    Original     		PDF 2SJ648 2SJ648 MARKING H1 SC-75

    2SJ601

    Abstract: M2SJ601 2SJ601-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE 2SJ601 TO-251 MP-3 2SJ601-Z TO-252 (MP-3Z) for solenoid, motor and lamp driver.


    Original     		PDF 2SJ601 2SJ601 O-251 2SJ601-Z O-252 O-251/TO-252 O-251) M2SJ601 2SJ601-Z

    D1659

    Abstract: 2SJ648 SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent


    Original     		PDF 2SJ648 2SJ648 D1659 SC-75

    D1563

    Abstract: 2SJ621 marking ls nec marking xg
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent


    Original     		PDF 2SJ621 2SJ621 D1563 marking ls nec marking xg

    PA1858

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1858 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and


    Original     		PDF PA1858 PA1858

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and


    Original     		PDF PA1819 PA1819

    2SJ331

    Abstract: 2SJ311 MP-88 NEC 4300
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ331 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ311 is P-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS on 1 = 26 mΩ TYP. (VGS = −10 V, ID = −15 A)


    Original     		PDF 2SJ331 2SJ311 2SJ331 MP-88 NEC 4300

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF