d408
Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
d408
DD 128 D transistor
GG13
LT 7212
MHz-860
RA45H7687M1-101
DD 128 transistor
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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RA45H7687M1
Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
RA45H7687M1-101
45WATT
DD 128 D transistor
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construction of varactor diode
Abstract: No abstract text available
Text: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
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MC12147
MC12202
MC12149
MC12147
200ms
909MHz
1220MHz
construction of varactor diode
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MPS8099 equivalent
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS8099 lt<E D | - 7*^4142 000733*1 fl NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR • Collector-Em ltter Voltage: V c eo = 8 0 V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
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MPS8099
625mW
MPS8098
MPS8099 equivalent
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Untitled
Abstract: No abstract text available
Text: SS9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER TO-92 * High Current Gain Bandwidth Product lT=1,100 MHz Typ ABSOLUTE MAXIMUM RATINGS (T ,= 2 5 °C ) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage
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SS9018
fe4142
0D2S201
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ZTX853
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -A U G U S T 94_ FEATURES * 100 V o lt VCE0 * 4 A m ps continuous current * Up to 10 Am ps peak current * Very lo w saturation voltage Ptot=1,2 W atts ABSOLUTE MAXIMUM RATINGS.
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Tamb-25Â
ZTX853
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Untitled
Abstract: No abstract text available
Text: MICRO ELECTRONICS MIE LT» 1,0*11700 D 0000=10=1 3 HMEHK MEL709D NPN PLANAR PHOTO-TRANSISTOR The MEL709D Is silicon phototransistor with external base connection and built in a standard T-l 3/4 5mm0 light rejective filter epoxy package. This device is suitable for use in a light
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MEL709D
MEL709D
100mA
200raW
100SC
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Untitled
Abstract: No abstract text available
Text: STANLEY ELECTRIC CO LT] SSE ]> • 4fc,7ßlSfl GGDSG3G G73 M I I S T ^lÄMLEt X ^-6 3 PHOTODARLINGTON TRANSISTOR PD502 ■ Package Dimensions ■ FEATURES • • HIGH SENSITIVITY lc = 4 m A TYP.) []3.4m m DIA. AXIAL LEAD TYPE, ULTRA COMPACT Unit in mm o
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PD502
DGDSD31
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEM BER 1995 FEATURES * 100 V o lt VCE0 * 4 A m p s c o n tin u o u s c u rre n t * U p to 10 A m p s peak c u rre n t * V ery lo w s a tu ra tio n v o lta g e * Ptot=1.2 W a tts ABSOLUTE M AXIM UM RATINGS.
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100mA
100mA,
300ns.
ZTX853
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transistor LT 1100
Abstract: No abstract text available
Text: KSC5027F NPN SILICON TRANSISTOR HIGH V O L T A G E AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA A B S O LU T E MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage Collector-Emitter Voltage VcBO Symbol 1100 V V CEO 800 Emitter-Base Voltage
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KSC5027F
transistor LT 1100
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Untitled
Abstract: No abstract text available
Text: KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VcBO 1100 V Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage V ebo 7
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KSC5030
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TRANSISTOR C 557 B
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY T 0-3P H IG H SP EED S W IT C H IN G W ID E SO A ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Rating Unit VcBO 1100 VcEO 800 V V V A A A W "C °c Symbol Collector-Base Voltage Collector-Emitter Voltage
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KSC5029
71hmH5
TRANSISTOR C 557 B
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Untitled
Abstract: No abstract text available
Text: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Switching • W ide SO A ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic S ym bol R a tin g U n it C ollector Base Voltage VcBO 1100 V C ollector E m itter Voltage VcEO 800 V Em itter Base Voltage
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KSC3552
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Untitled
Abstract: No abstract text available
Text: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Sw itching • W ide S O A ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO Sym bol 1100 V C ollector Em itter Voltage VcEO 800 V Em itter Base Voltage
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KSC3552
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Untitled
Abstract: No abstract text available
Text: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER S O T -2 3 HIGH <T fr =1100MHz Typ. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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KSC2757
1100MHz
b4142
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Untitled
Abstract: No abstract text available
Text: KSC5029 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY H IGH S P E E D S W IT C H IN G W ID E SOA ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit Collector- Base Voltage VcBO 1100 Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage
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KSC5029
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Sw itching • W id e SO A ABSOLUTE MAXIMUM RATINGS C h a r a c te r is tic Sym bol R a tin g U n it C ollecto r Base Voltage V cB O 1100 V C ollecto r E m itter Voltage V cE O
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KSC3552
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QM600HA-24B
Abstract: QM600 transistor b 103 qm600H
Text: MITSUBISHI TRANSISTOR MODULES QM600HA-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-24BK • lc Collector cu rren t. 600A : • V cex Collector-emitter vo ltag e .1200V DC current g a in .750
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QM600HA-24BK
QM600HA-24B
QM600
transistor b 103
qm600H
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KSC5027
Abstract: No abstract text available
Text: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY i- HIGH SPEED SWITCHING WIDE SOA i T0-220 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic C ollector-Base Voltage V cbo Collector-Em itter Voltage VcEO Emitter-Base Voltage C ollector C urrent DC
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KSC5027
T0-220
KSC5027
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Untitled
Abstract: No abstract text available
Text: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER S O T-23 HIGH fT fT=1100M H z TYP. ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit 30 15 5 V V V Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage
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KSC2757
1100M
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Untitled
Abstract: No abstract text available
Text: KSC5030F NPN SILICON TRANSISTOR HIGH V O L T A G E AND HIGH RELIABILITY TO-3PF • HIGH S PEED SWITCHING • WIDE SOA A B S O LU T E MIXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VcBO Collector Emitter Voltage VcEO Emitter Base Voltage
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KSC5030F
CSC5030F
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varactor SSOP
Abstract: AN Motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Pow er V oltage Controlled O scillator Buffer M C 12147 The MC12147 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using
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MC12147
1300MHz.
MC12202
10dB/
909MHz
200ms
BR1334
MC12147
varactor SSOP
AN Motorola
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Mitsubishi transistor
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE f INSULATED TYPE I ! QM75E2Y/E3Y-2H 1 t • Ic Collector cu rren t. 75A j • V cex • hFE Collector-em itter v o lta g e . 1000V s DC current g a in . 75 j
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QM75E2Y/E3Y-2H
E80276
E80271
Mitsubishi transistor
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