TRANSISTOR LM Search Results

TRANSISTOR LM Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR LM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
LIMITING INRUSH CURRENT npn Abstract: No abstract text available Text: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from	Original	PDF	LP395 LP395 LIMITING INRUSH CURRENT npn
LMUN5313DW1T1G Abstract: LMUN5311DW1T1G LMUN5312DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5313DW1T3G Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN53xxDW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network	Original	PDF	LMUN53xxDW1T1G LMUN53xxDW1T1G SC-88/SOT-363 LMUN5313DW1T1G LMUN5311DW1T1G LMUN5312DW1T1G LMUN5314DW1T1G LMUN5315DW1T1G LMUN5316DW1T1G LMUN5313DW1T3G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5111DW1T1G Series S-LMUN5111DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias	Original	PDF	LMUN5111DW1T1G S-LMUN5111DW1T1G LMUN5111DW1T1G N5111DW1T1G SC-88/SOT-363
D74HA0.75A-C Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network	Original	PDF	LMUN5311DW1T1G LMUN5311DW1T1G SC-88/SOT-363 D74HA0.75A-C
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network	Original	PDF	LMUN5311DW1T1G LMUN5311DW1T1G
Untitled Abstract: No abstract text available Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor	Original	PDF	LM96163 LM96163 2N3904,
Untitled Abstract: No abstract text available Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor	Original	PDF	LM96163 2N3904,
LMUN5311DW-5 Abstract: "two TRANSISTORs" sot-363 pnp npn LMUN5311DW1T1 LMUN5311DW1T1G LMUN5312DW1T1 LMUN5312DW1T1G LMUN5313DW1T1 LMUN5313DW1T1G LMUN5314DW1T1 LMUN5314DW1T1G Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1 Series 6 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network	Original	PDF	LMUN5311DW1T1 LMUN5311DW1T1 311DW1T1 SC-88/SOT-363 LMUN5311DW-29/29 LMUN5311DW-5 "two TRANSISTORs" sot-363 pnp npn LMUN5311DW1T1G LMUN5312DW1T1 LMUN5312DW1T1G LMUN5313DW1T1 LMUN5313DW1T1G LMUN5314DW1T1 LMUN5314DW1T1G
2N3904 Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6 Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor	Original	PDF	LM96163 LM96163 2N3904, 2N3904 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single 3	Original	PDF	LMUN5111T1 70/SOTâ LMUN5111T1 SC-70 OT-323 Series-12/12
RTU620 Abstract: No abstract text available Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta	Original	PDF	LM96163 LM96163 SNAS433C RTU620
sot-89 Marking 8D Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor	Original	PDF	LMUN5211T1G 70/SOTâ sot-89 Marking 8D

Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR IN C _ MMBT5088 — IM E D \| T lb M lM S Ü007271. T § NPN EPITAXIAL SILICON TRANSISTOR - LOW NOISE TRANSISTOR T '- ^ . q - i q " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C	OCR Scan	PDF	MMBT5088 OT-23
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA KTA501U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE.	OCR Scan	PDF	KTA501U
2SC5170 Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for	OCR Scan	PDF	2SC5170 2SC5170 100Hz) 110mVtyp X10-3 LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
2SC5169 Abstract: low noise transistor table Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING	OCR Scan	PDF	2SC5169 2SCS169 100mVtyp X10-3 2SC5169 low noise transistor table
R T O BH TRANSISTOR Abstract: 2SC5168 transistor CR NPN Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.	OCR Scan	PDF	2SC5168 2SC5168 100mV 250to800 270Hz X10-3 R T O BH TRANSISTOR transistor CR NPN
BC450 Abstract: 5v power transistor Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage	OCR Scan	PDF	BC450 BC450 300mA 625mW 100mA 100MII; 300/iS, 5v power transistor
transistor 1052 Abstract: WPDT-317D photo darlington sensor Rise time of photo transistor p317d Text: Photo Transistor Waitrony Module No.: WPDT-317D 1. General Description: The WPDT-317D is ; output NPN photo dai transistor mounted in an end black epoxy package. This photo darlington transistor narrow angular response. Dimensions 2. Features > > ^ > Compact 03mm	OCR Scan	PDF	WPDT-317D WPDT-317D Temper317D transistor 1052 photo darlington sensor Rise time of photo transistor p317d
transistor KSP55 Abstract: No abstract text available Text: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEo = KSP55: 60V KSP56: 80V • Collector D lM ipatlon: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Rating	OCR Scan	PDF	KSP55/56 KSP55: KSP56: KSP55 KSP56 --10mA transistor KSP55
transistor Abstract: No abstract text available Text: RELATED DOCUMENTS SMALL SIGNAL DIODE SMALL SIGNAL TRANSISTOR LEAD DEVICE SMALL SIGNAL TRANSISTOR (SURFACE MOUNT DEVICE) HIGH FREQUENCY DEVICE L-MOS	OCR Scan	PDF
2SA1927 Abstract: 05SV ra-100 Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING	OCR Scan	PDF	2SA1927 2SA1927 100mVtyp 270Hz X10-3 05SV ra-100

TRANSISTOR LM Search Results

TRANSISTOR LM Result Highlights (5)

TRANSISTOR LM Datasheets Context Search

MN1280

oz960

LIMITING INRUSH CURRENT npn

LMUN5313DW1T1G

Untitled

D74HA0.75A-C

Untitled

Untitled

Untitled

LMUN5311DW-5

2N3904

Untitled

RTU620

sot-89 Marking 8D

Untitled

Untitled

2SC5170

2SC5169

R T O BH TRANSISTOR

BC450

transistor 1052

transistor KSP55

transistor

2SA1927