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    TRANSISTOR LIZ Search Results

    TRANSISTOR LIZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LIZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF327

    Abstract: 80WF
    Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base


    Original     		PDF MRF327 AR120NA MRF327 80WF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944

    Transistor BFw 92

    Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
    Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain


    OCR Scan     		PDF 596/0776A1 470pF 20x8x0 Transistor BFw 92 TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor

    1671B

    Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
    Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point


    OCR Scan     		PDF 2N1671 2N1671-2N1671A) 2N1671B) 314737S 1671B scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C

    philips blx15

    Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
    Text: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:


    OCR Scan     		PDF 7110fl2ti ODb3471 BLX15 philips blx15 BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188

    Untitled

    Abstract: No abstract text available
    Text: E HIGH-SPEED TRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS i - HCPL-2503 HCPL-4502 6N136 6N135 DESCRIPTION PACKAGE DIMENSIONS The HCPL-4502/HGPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.


    OCR Scan     		PDF HCPL-2503 HCPL-4502 6N136 6N135 HCPL-4502/HGPL-2503 6N136/5 C1946 74bbflSl C2D00 DQ0b03fl

    pulse transformer 4502

    Abstract: c1946 hcpl 4502 4502
    Text: HIGH-SPEED TRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES HCPL-2503 HCPL-4502 6N136 6N135 PACKAGE DIMENSIONS ft DESCRIPTION The HCPL-4502/HCPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.


    OCR Scan     		PDF HCPL-2503 HCPL-4502 6N136 6N135 HCPL-4502/HCPL-2503 6N136/5 C1997 pulse transformer 4502 c1946 hcpl 4502 4502

    2SK875

    Abstract: 2SK875A
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK875 The 2SK875 is N-channel MOS Field E ffe ct Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES • in m illim e te rs inches


    OCR Scan     		PDF 2SK875 2SK875 1987M 2SK875A

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    TFK 351

    Abstract: BFY88 BFY 88 tfk 352 tfk 349 BFY 20 Mischstufen BFY 36 transistor Scans-0010448 BFy 90 transistor
    Text: /A \ BFY 880 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: UHF-Verstärker-, Vorstufen in Em itterschaltung S elbstschw ingende M ischstufen in Basisschaltung Applications: UHF a m plifier stages, pre stages in com m on e m itter configuration


    OCR Scan     		PDF 200MHz TFK 351 BFY88 BFY 88 tfk 352 tfk 349 BFY 20 Mischstufen BFY 36 transistor Scans-0010448 BFy 90 transistor

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    BLX67

    Abstract: mrtil transistor 3568
    Text: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,


    OCR Scan     		PDF G014DDM BLX67 T-33-Ã BLX67 mrtil transistor 3568

    Untitled

    Abstract: No abstract text available
    Text: CA3086 Semiconductor General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz T he C A 3 08 6 con sists of five g e n e ra l-p u rp o se silicon NPN


    OCR Scan     		PDF CA3086

    J 3305

    Abstract: BLX67 transistor J 3305 transistor TE 901 transistor 3305 th258 R5305 transistor c 1974
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D m 711GÔEb 00277^1 2 E1PHIN BLX67 - r - 3 3 - 0 5 “ • U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,8 V.


    OCR Scan     		PDF BLX67 -r-53-05" 27ATIONAL T-33-05 7Z68919 7Z6992) J 3305 BLX67 transistor J 3305 transistor TE 901 transistor 3305 th258 R5305 transistor c 1974

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^ SSE D 53=131 0 0 2 0 4 3 0 4 BUK452-50A BUK452-50B PowerMOS transistor T-37-IJ GENERAL DESCRIPTION SYMBOL > « O N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK452-50A BUK452-50B T-37-IJ BUK452

    transistor itt 975

    Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz


    OCR Scan     		PDF BLX15 transistor itt 975 BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640

    micrologic

    Abstract: gating a signal using NAND gates fairchild micrologic IC953 slave and master inverter circuit diagrams Inverter Gates CA2TC CTVL952 pin configuration of logic gates logic gates circuit diagram
    Text: • M ARCH 1965 CT mL952 THROUGH CTgL957 9 TRANSISTOR COMPLEMENTARY TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS MICROLOGIC® G E N E R A L D E S C R IP T IO N - The Fairchild CT/aL Fam ily was designed for very high-speed, low -cost com m ercial system s applications.


    OCR Scan     		PDF CTmL952 CTML957 CTfiL-953 CTia-957 iC953 iL-957 micrologic gating a signal using NAND gates fairchild micrologic IC953 slave and master inverter circuit diagrams Inverter Gates CA2TC CTVL952 pin configuration of logic gates logic gates circuit diagram

    PL 431 transistor

    Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R
    Text: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the


    OCR Scan     		PDF 711002b BLX65 O-39/1; PL 431 transistor BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R

    MJE370

    Abstract: MJE520 MOTOROLA
    Text: MOTOROLA SC X S T R S /R 1SE D I F b3b?254 Ciaa53H7 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP SILICON TRANSISTOR 3 AMPERE POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 W att audio amplifiers uti­


    OCR Scan     		PDF Ciaa53H7 MJE520 MJE370 MJE520 MOTOROLA

    OUT40

    Abstract: No abstract text available
    Text: 0 182998 .AGRIAN. INC T? infini02e]TA 0001433 a i l kCRIAN G EN ER A L 2304 D E S C R IP TIO N 4.0 WATTS - 20 VOLTS 2300 MHz The 2304 is a common base transistor capable of providing 4 watts of CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed


    OCR Scan     		PDF 0DG1433 cc-20 OUT40

    JE370

    Abstract: LT 7706 MJE520 Je52 MJE520 MOTOROLA
    Text: MOTOROLA SC 15E 0 I fc,3b?25M ÜOflS331 4 | XSTRS/R F T -3* 3 -ö f MOTOROLA SEMICONDUCTOR MJE520 TECHNICAL DATA 3 AMPERE PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 30 V O L T S 25 W A T T S . . .'designed for use in general-purpose amplifier and switching


    OCR Scan     		PDF OflS331 MJE520 JE370 JE370 LT 7706 MJE520 Je52 MJE520 MOTOROLA

    2SK785

    Abstract: No abstract text available
    Text: 64 27 52 5 N E C ELEC TR ON IC S INC 98D 18931 D T " J f - 3 w üg¡ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR IB DESCRIPTION FEA TU RES B E | t 4 E7 S a S D D 1S131 3 2SK785 | The 2SK785 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters.


    OCR Scan     		PDF 642752S 2SK785 2SK785 T-39-13