TRANSISTOR L1A Search Results

TRANSISTOR L1A Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR L1A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: polyfet rf devices L78008 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	L78008	PDF
J239 mosfet transistor Abstract: L1AB Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF374A MRF374A J239 mosfet transistor L1AB	PDF
marking c14a Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001	PDF
marking c14a Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of	Original	MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a	PDF
RO3010 Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372 Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372R3 MRF372R5 MRF372R3 MRF372 RO3010 marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372	PDF
marking c14a Abstract: C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352 Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A marking c14a C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352	PDF
marking c14a Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800 Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A MRF374A marking c14a ATC - Semiconductor Devices transistor j239 04 6274 045 000 800	PDF
C3B Kemet Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R5 C3B Kemet	PDF
transmitter 446 mhz Abstract: R5B transistor J960 470-860 mhz Power amplifier w Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w	PDF
MRF374A Abstract: marking c14a l1a marking Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A marking c14a l1a marking	PDF
RO3010 Abstract: RF POWER VERTICAL MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374 MRF374A RO3010 RF POWER VERTICAL MOSFET	PDF
RO30 Abstract: mrf374 Text: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A RO30 mrf374	PDF
transistor R1A 37 Abstract: 5233 mosfet J146 VJ1210y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y	PDF
RO3010 Abstract: j352 transistor j352 bc17a VJ2225Y Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y	PDF

R10B Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R5 R10B	PDF
R4A marking Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R5 R4A marking	PDF
C14A Abstract: MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A C14A MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP	PDF
marking c14a Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device	PDF
part marking information vishay HD 1 Abstract: l1a marking MRF372R5 Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372 MRF372R3 MRF372R5 MRF372 part marking information vishay HD 1 l1a marking MRF372R5	PDF
RO3010 Abstract: C14A z14b Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 MRF374/D RO3010 C14A z14b	PDF
J352 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF374A/D MRF374A MRF374A/D J352	PDF
balun 75 ohm Abstract: C14A RO3010 MRF372 c9ab Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this	Original	MRF372/D MRF372 balun 75 ohm C14A RO3010 MRF372 c9ab	PDF
C3B Kemet Abstract: No abstract text available Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF372/D 31anufacture MRF372 C3B Kemet	PDF
10RJ Abstract: KCB05 BCY67 F-05 Q62702-C254 510zma 5v 10rj Text: 55C D • fl235bOS 000431^ 1 SIEG BCY67 7 ^ ^ 7 - Z- 3 PNP Silicon Planartransistor SIEMENS AKTIENfiESELLSCHAF 04319 BCY 67 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided	OCR Scan	235b05 04-3L9 BCY67 Q62702-C254 mb-25 10RJ KCB05 F-05 Q62702-C254 510zma 5v 10rj	PDF

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TRANSISTOR L1A Search Results

TRANSISTOR L1A Result Highlights (5)

TRANSISTOR L1A Datasheets Context Search

Untitled

J239 mosfet transistor

marking c14a

marking c14a

RO3010

marking c14a

marking c14a

C3B Kemet

transmitter 446 mhz

MRF374A

RO3010

RO30

transistor R1A 37

RO3010

R10B

R4A marking

C14A

marking c14a

part marking information vishay HD 1

RO3010

J352

balun 75 ohm

C3B Kemet

10RJ