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    TRANSISTOR L 945 Search Results

    TRANSISTOR L 945 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR L 945 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO4409L

    Abstract: PF745 AO4409 AO4409/L
    Text: AO4409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4409/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4409 and


    Original     		PDF AO4409 AO4409/L AO4409 AO4409L -AO4409L PF745

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


    Original     		PDF 2SA1037AK SC-88A -50/iA -50pA --12V, AC221 2SC1412 VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK

    TRIAC BCR 16 km

    Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
    Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)


    Original     		PDF R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04

    shockley diode application

    Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
    Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has


    OCR Scan     		PDF 8000/nominal shockley diode application shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite

    BLX92A

    Abstract: feedthrough cap
    Text: P H I L IP S I N T E R N A T I O N A L 41E D S3 711ÜÖSb 0057Ö37 G H P H I N BLX92A M A IN TE N A N C E TYPE r-33~0S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A 711002b 002704b BLX92A feedthrough cap

    14549F

    Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
    Text: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor


    OCR Scan     		PDF 20MHz. 14549F itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D

    BLX13C

    Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
    Text: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear


    OCR Scan     		PDF Db34Mcl BLX13C 711005b 00fci34S7 7Z77839 BLX13C BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v

    2SC4549

    Abstract: LTWE D1559
    Text: 7 s — $ ' y — b - > y = i > /\°7 - k ÿ > y z $ Silicon Power Transistor 2SC4549 T J l ' M V V =1 > h 7 > V X £ NPNX 2 S C 4 5 4 9 li, -y L T I l ^ £ f l ^ ot7 - :J X 9 T" L o w VcE sat T* hFE ^ a. X 9 (T) V' y 4 '< b h 9 > ^ <50 T* D C / D C =t L T


    OCR Scan     		PDF 2SC4549 2SC4549 LTWE D1559

    transistor rf m 9860

    Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
    Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for


    OCR Scan     		PDF 520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490

    Transistor SMD SM 942

    Abstract: No abstract text available
    Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30


    OCR Scan     		PDF 30N03 67040-S 144-A -T0251-3-1 146-A S35bQ5 Q133777 SQT-89 B535bQ5 Transistor SMD SM 942

    transistor NEC D 986

    Abstract: TC-7860 TH 2190 transistor* tf 7860 3r j 2SC4810 d1560
    Text: z r — • y — h /\° 7 - h 7 > ÿ x i ! Darlington Power Transistor 2SC4810 h-7 > v X ^ m 2S C 4810«, Î ; ê m & Z # - V > h > 1$ M ' f v ï x ï m y ( 7 ) ^ - U > h > / \ ° 7 - h 5 > '> 'X ^ T - T o OA, 7 v 7 7 ^ x - t ; > ^ t t ^ i T i l Î l l l ^ ^ B T ^ 4 ' / \ 07 ^ - v " e * U ,


    OCR Scan     		PDF 2SC4810 2SC4810Â D15601JJ2V0DS00 TC-7860) transistor NEC D 986 TC-7860 TH 2190 transistor* tf 7860 3r j 2SC4810 d1560

    j329

    Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
    Text: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo


    OCR Scan     		PDF

    2SA988

    Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
    Text: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )


    OCR Scan     		PDF 2SA988 SC-43B S24-S| 2SA988 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    bTI51

    Abstract: fsjc F4CJ 2SJ209 TF230
    Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-


    OCR Scan     		PDF 2SJ209 IEI-620) bTI51 fsjc F4CJ 2SJ209 TF230

    MLT 22 452

    Abstract: 2SA1871
    Text: — S • 5 /— h '> 'J =1 > V 9 Silicon Transistor 2 S = W .fàïïlM '> lJ □ V h PNP -vi-yy'fiïtemiêètl, X'f "/ V-% 3.V — 9*? D C /D C a >'<— •?-%:t'iOXj -yf - > 2SA1871 ü r Î Æ l î ^ i Î Œ x ^ f - > ?" • L t i l f t A 1 8 7 1 7 .9 ^ f i


    OCR Scan     		PDF 2SA1871 02SC4942 IEI-620) MLT 22 452 2SA1871

    PA1501

    Abstract: s 452-2 lt0246 NEC TRANSISTOR 8882 uPA1501 3TAE1 ssg diode fta 501 diode sg 5 ts
    Text: ^ — 5 7 .= / — SEC ï ï t h Compound Field Effect Power Transistor / v t x ¿ N ^ ^ U x n ^ -M O S FET ¿ P A 5 I 1 7W I i f f l //PA1501 ±, 4 V . f g g j N f - ^ ^ 'V - M O S F E T £ 4 M OS F E T T “1 - C 0 T iJlffln ^ - y ^ IC K £ l * l / L T ^ Î - f W Ü - / 1 V ^ J^ ' 7 - - 7 Bn ^


    OCR Scan     		PDF uPA1501 PA1501 s 452-2 lt0246 NEC TRANSISTOR 8882 3TAE1 ssg diode fta 501 diode sg 5 ts

    2SK929

    Abstract: PS7K 2 fy
    Text: M O S Field Effect Pow er Transistor 2SK929 MOS F E T Itffl 2SK929 l ì , T N MOS F E T 6 < , t •Vf- > r m , X ' i y f y tS > , K W m T O : mm) ¡ S l t l 'i S - X 'i 10.5 M A X . DC-D C 3 > /< - ? 4.7 M A X . 3 .0 M A X . # i t ° V d ss = 500 V, I dcdc) =


    OCR Scan     		PDF 2SK929 2SK929 FAXlZT43 ECl53ffie PS7K 2 fy

    ic ntp- 3000

    Abstract: IIH13 Scans-0088096
    Text: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o


    OCR Scan     		PDF IEI-620) PWS10 TC-6083A ic ntp- 3000 IIH13 Scans-0088096

    2sc4814

    Abstract: transistor C017 258 c017
    Text: X — £ • y h — V y a > /\°7 - b 7 > v z .$ Silicon Power Transistor 2SC4814 NPN X tf £ V T Jls B y ' j 3 > h 7 > ÿ X ^ Í S * X < 7 Í > ^ f f l 2 S C 4 8 1 4 à, «F lÊ M W lÆ V fà h FE? j y c V ' ' ! ? - h 7 > ïs X ? T t o OA, F A ^ è ^ ^ / U X ^ - ^ - ^ y y '>


    OCR Scan     		PDF 2SC4814 2SC4814 D15604JJ2V0DS00 transistor C017 258 c017

    G2JS

    Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
    Text: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7


    OCR Scan     		PDF 2SC4550 2SC4550 PWS300 D15596JJ2V0DS00 G2JS Immo transistor t 2190 U/25/20/TN26/15/850/G2JS

    2SA1610

    Abstract: l 0734 2SC4176 L0734 846 B34 t460 transistor
    Text: SEC '> • ; = ] > l * 7 > Silicon Transistor lÏ T / \ f 7 2SC4176 « it : mm O X - i -y •f- > ? " i Î ) £ * i i â v > c, O 1 ? 2.1+0.1 ;7 tâ fP 1 iC rE * i ' j ' ? 1.25 ±0.1 O ÎIJ Îf ^ lp If i^ ë ^ o o 2SA 1610 £ 3 > 7 ° I) / > ? U tM È ffl-ü ë i t o


    OCR Scan     		PDF 2SC4176 2SA1610 l 0734 L0734 846 B34 t460 transistor

    D1351

    Abstract: ELLS 110 2SA1458 U110 5925B
    Text: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o


    OCR Scan     		PDF 2SA1458 02SC3731 D13515JJ4V0DS00 TC-5925B) D1351 ELLS 110 2SA1458 U110 5925B

    2N6617

    Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
    Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


    OCR Scan     		PDF 2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. 2N6617 HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101