TRANSISTOR L 2 Search Results

TRANSISTOR L 2 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR L 2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor power 5w Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170 Text: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original	PH2323-5 transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170	PDF
b 595 transistor Abstract: 73c50 PH2323-1 el841 transistor Common Base configuration 2S425 EL84 transistor b 595 Text: 3 .- an AMP comDanv CW Power Transistor, 2.3 GHz 1W PH2323-1 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original	PH2323-1 lOCZ31C UN-53 34N4UA TT5CY50A 73c50257-13 b 595 transistor 73c50 PH2323-1 el841 transistor Common Base configuration 2S425 EL84 transistor b 595	PDF
transistor J17 Abstract: transistor j8 2052-5636-02 wacom Z005 Text: an AMP company Radar Pulsed Power Transistor, 25W, loops Pulse, 10% Duty PH2729-25M 2.7 - 2.9 GHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH2729-25M 38-j14 35-j16 33-j17 PH2729-25M transistor J17 transistor j8 2052-5636-02 wacom Z005	PDF
Transistor s41 Abstract: b 595 transistor linear accelerator L200 PH2856-160 transistor b 595 Text: an AMP cotn~any Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz PH2856-160 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry	Original	PH2856-160 Transistor s41 b 595 transistor linear accelerator L200 PH2856-160 transistor b 595	PDF
j78 transistor Abstract: transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE Text: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors	Original	PH1214-3L j78 transistor transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE	PDF
transistor p8 Abstract: f2224 52Z05 Text: =_ rz an AMP comcww Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz v2.00 so3 Features l l l l l l l _ NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-11 06Oi-& transistor p8 f2224 52Z05	PDF
transistor 81 110 w 85 Abstract: PH3135-30M Text: an AMP =- zE company Radar Pulsed Power Transistor, 3OW, IOOps Pulse, 10% Duty PH3135-30M 3.1 - 3.5 GHz v2.00 Features l l l l l l l l SJC :22 65, NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry	Original	PH3135-30M i-110 lT50MSOA 7xm25B-05 73o5025603 transistor 81 110 w 85 PH3135-30M	PDF
L-Band 1200-1400 MHz Abstract: diode gp 429 Radar x band radar HV400 Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor	Original	HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400	PDF
Rogers 6010.5 Abstract: PH1214-20EL PH1214-25M 6010.5 transistor j39 Text: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	214-20EL PH1214-20EL PH1214-25M Rogers 6010.5 PH1214-20EL PH1214-25M 6010.5 transistor j39	PDF
transistor c s z 44 v Abstract: PH1214-25L PH1214-25M Text: = SC= z =z an AMP company = Radar Pulsed Power Transistor, 25W, 300~s Pulse, 10% Duty PHI 214-25L 1.2 - 1.4 GHz v2.00 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	214-25L PH1214-25L PH1214-25M transistor c s z 44 v PH1214-25L PH1214-25M	PDF
t 30 55el Abstract: LL903 transistor 81 120 w 63 LL-903 PH1214-40M PH1214-55EL ph1214-40 transistor 81 120 w 55 1035 transistor PJ 81 Text: an AMP comDanv Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL 1.2 - 1.4 GHz v2.00 Features l l l l l l l l 903 22 85 J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors	Original	PH1214-55EL 200ific: PH1214-40M t 30 55el LL903 transistor 81 120 w 63 LL-903 PH1214-40M PH1214-55EL ph1214-40 transistor 81 120 w 55 1035 transistor PJ 81	PDF
7z transistor Abstract: J401 PH2226-50M Text: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 22.85 NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors	Original	PH2226-50M 7z transistor J401 PH2226-50M	PDF
1030mhz Abstract: 2TD12 HV400 SM200 1090mhz Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed	Original	HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz	PDF
NPN TRANSISTOR Z4 Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595 Text: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PH3134-65M 225t010 iEV-15 NPN TRANSISTOR Z4 b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595	PDF

13MM Abstract: 817j18 Text: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original		PDF
BP317 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBS3906/L PNP general purpose transistor Product specification 2000 Nov 29 Philips Semiconductors Product specification PNP general purpose transistor PMBS3906/L FEATURES PINNING • Low current max. 100 mA	Original	M3D088 PMBS3906/L PMBS3904/L. MAM256 613514/01/pp8 BP317	PDF
EL series SMD transistor Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description	Original	IPL60R299CP 150mm² EL series SMD transistor 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299	PDF
BP317 Abstract: transistor marking 44 sot23 marking AO4 Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PMBS3904/L NPN general purpose transistor Product specification 2000 Nov 29 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904/L FEATURES PINNING • Low current max. 100 mA	Original	M3D088 PMBS3904/L PMBS3906/L. MAM255 613514/01/pp8 BP317 transistor marking 44 sot23 marking AO4	PDF
Radar Abstract: diode gp 429 HV400 Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty	Original	HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi Radar diode gp 429 HV400	PDF
6r600e6 Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6	Original	IPx60R600E6 IPD60R600E6, IPP60R600E6 IPD60R600E6 6r600e6 infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19	PDF
6r041c6 Abstract: IPW60R041C6 6r041c6 mosfet data ipw60r041 6R041 infineon MOSFET parameter test JESD22 if444 c6 transistor uc pfc Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R041C6 Data Sheet Rev. 2.0, 2010-03-29 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R041C6 Description	Original	IPW60R041C6 6r041c6 IPW60R041C6 6r041c6 mosfet data ipw60r041 6R041 infineon MOSFET parameter test JESD22 if444 c6 transistor uc pfc	PDF
6R070C6 Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description	Original	IPW60R070C6 6R070C6 6R070C6 MOSFET TRANSISTOR IPW60R070C6 JESD22	PDF
6R199P Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description	Original	IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199	PDF
6R380e6 Abstract: IPA60R380E6 IPP60R380E6 IPA60R380C6 JESD22 IPP60R380E TO-220 package thermal resistance Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6	Original	IPx60R380E6 IPP60R380E6, IPA60R380E6 6R380e6 IPA60R380E6 IPP60R380E6 IPA60R380C6 JESD22 IPP60R380E TO-220 package thermal resistance	PDF

TRANSISTOR L 2 Search Results

TRANSISTOR L 2 Result Highlights (5)

TRANSISTOR L 2 Datasheets Context Search

transistor power 5w

b 595 transistor

transistor J17

Transistor s41

j78 transistor

transistor p8

transistor 81 110 w 85

L-Band 1200-1400 MHz

Rogers 6010.5

transistor c s z 44 v

t 30 55el

7z transistor

1030mhz

NPN TRANSISTOR Z4

13MM

BP317

EL series SMD transistor

BP317

Radar

6r600e6

6r041c6

6R070C6

6R199P

6R380e6