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    TRANSISTOR KTC3202 Search Results

    TRANSISTOR KTC3202 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KTC3202 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    KTC3202

    Abstract: 35VCEO
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR NPN TO-92 FEATURES General purpose application switching application 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol


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    KTC3202 100mA 400mA 100mA, KTC3202 35VCEO PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR NPN TO-92 FEATURES General Purpose Application Switching Application 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter


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    KTC3202 100mA 400mA 100mA, PDF

    KTA1270

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1270 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. ・Complementary to KTC3202. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC


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    -400mA. KTC3202. KTA1270 Transi5150 25Min. 40Min. -400mA -100mA, -10mA -100mA KTA1270 PDF

    KTA1270

    Abstract: KTC3202
    Text: SEMICONDUCTOR KTA1270 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. N E K G ) SYMBOL RATING UNIT


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    KTA1270 -400mA. KTC3202. 100mS* KTA1270 KTC3202 PDF

    transistor ktc3202

    Abstract: KTC3202 KTA1270
    Text: SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. Complementary to KTA1270. N E K G J D ) SYMBOL RATING UNIT


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    KTC3202 400mA. KTA1270. 100mA 400mA 100mA, 25Min. 40Min. transistor ktc3202 KTC3202 KTA1270 PDF

    KTA1270

    Abstract: KTC3202
    Text: SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. ᴌComplementary to KTA1270. N E K G J D MAXIMUM RATING (Ta=25ᴱ)


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    KTC3202 400mA. KTA1270. KTA1270 KTC3202 PDF

    KTA1270

    Abstract: KTC3202
    Text: SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. ᴌComplementary to KTA1270. N E K G J D MAXIMUM RATING (Ta=25ᴱ)


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    KTC3202 400mA. KTA1270. KTA1270 KTC3202 PDF

    KTA1270

    Abstract: KTC3202 kta1270 transistor
    Text: SEMICONDUCTOR KTA1270 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. ᴌComplementary to KTC3202. N E K G J D MAXIMUM RATING (Ta=25ᴱ)


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    KTA1270 -400mA. KTC3202. KTA1270 KTC3202 kta1270 transistor PDF

    transistor ktc3202

    Abstract: KTC3202 ktc32
    Text: KTC3202 KTC3202 TRANSISTOR NPN FEATURES TO-92 Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


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    KTC3202 100mA 400mA transistor ktc3202 KTC3202 ktc32 PDF

    KTA1270

    Abstract: KTC3202
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 KTC3202 Features • • • • General Purpose Application Switching Application Excellent hFE Linearity: hFE 2 =25(Min. ) at V CE=6V, IC=400mA Complementary to KTA1270


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    KTC3202 400mA KTA1270 KTA1270 KTC3202 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC3202 Features • • • • General Purpose Application Switching Application Excellent hFE Linearity: hFE 2 =25(Min. ) at V CE=6V, IC=400mA


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    KTC3202 400mA KTA1270 35Vdc PDF

    KTC3202-Y

    Abstract: ktc3202y KTC3202-O
    Text: MCC TM Micro Commercial Components KTC3202-O KTC3202-Y KTC3202-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • General Purpose Application Switching Application


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    KTC3202-O KTC3202-Y KTC3202-GR 400mA KTA1270 KTC3202 ktc3202y PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD PDF

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


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    USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 PDF

    Untitled

    Abstract: No abstract text available
    Text: P * FORWARD INTERNATIONAL ELECTRONICS LTD. KTC3202 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES * Excellent Hfe Linearity :Hfe 2 =25(Min) at Vce=6V, Ic=400mA. ♦Complementary toKTA1270


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    KTC3202 400mA. toKTA1270 100mA 400rnA 100mA PDF

    KTA1270

    Abstract: KTC3202
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3202 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e linearity : hFE 2 =25Min. : VCE=6V, Ic=400mA. • Complementary to KTA1270.


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    KTC3202 25Min. 400mA. KTA1270. KTA1270 KTC3202 PDF

    KTA1270

    Abstract: KTC3202
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3202 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife linearity • hFE 2 =25M in. • V ce -6 V , • Complementary to KTA1270. Ic-400mA. MAXIMUM RATINGS (Ta=25°C)


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    KTC3202 25Min. 400mA. KTA1270. KTA1270 KTC3202 PDF

    Untitled

    Abstract: No abstract text available
    Text: ter P * FORWARD INTBRNAHONAL ELECTRONICS LTD. KTA1270 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. Package: TO-92 FEATURES * Excellent Hfe Linearity: Hfe 2 =25(M m.) at Vce=-6V,Ic=^K)0mA


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    KTA1270 KTC3202 -100mA -400mA -100mA -10mA -20mA PDF

    KTA1270

    Abstract: KTC3202
    Text: KEC SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. GEN ERA L PU R PO SE TE C H N IC A L D A T A KTA1270 EPITAXIAL PLANAR PNP TRANSISTOR A P P L IC A T IO N . S W IT C H IN G A P P L IC A T IO N . FEA TU RES • Excellent h.FE Linearity : hFE 2 =25(Min.) at V ce= -6 V , Ic=-400mA.


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    KTA1270 400mA. KTC3202. KTA1270 KTC3202 PDF