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    TRANSISTOR KT 326 Search Results

    TRANSISTOR KT 326 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KT 326 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    multifunction converter

    Abstract: mat02
    Text: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀


    Original     		PDF LM194/394 MAT02 C00283 multifunction converter mat02

    LM194 NPN Monolithic Transistor Pair

    Abstract: LM194 MAT02 MAT02FH NPN Monolithic Transistor Pair antilog amplifier I2 200-5 mat04 "direct replacement" op07 ic metal package datasheet Precision Monolithics
    Text: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀


    Original     		PDF MAT02 LM194/394 MAT02 LM194 NPN Monolithic Transistor Pair LM194 MAT02FH NPN Monolithic Transistor Pair antilog amplifier I2 200-5 mat04 "direct replacement" op07 ic metal package datasheet Precision Monolithics

    KT 185

    Abstract: MAT02 MAT02F MAT02FH MAT04 OP07 OP15 AMP01 MAT02E MAT02EH
    Text: a FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 ␮V/؇C max Improved Direct Replacement for LM194/394


    Original     		PDF LM194/394 MAT02 MAT02 KT 185 MAT02F MAT02FH MAT04 OP07 OP15 AMP01 MAT02E MAT02EH

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, Matched Dual Monolithic Transistor MAT02 a PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀


    Original     		PDF MAT02 LM194/394 MAT02

    kt 784

    Abstract: antilog amplifier "logarithmic amplifier" LM194 MAT02FH op07 ic metal package datasheet sy-15 8c 617 transistor I2 200-5 MAT02
    Text: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at I C = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀


    Original     		PDF MAT02 LM194/394 MAT02 X1000 kt 784 antilog amplifier "logarithmic amplifier" LM194 MAT02FH op07 ic metal package datasheet sy-15 8c 617 transistor I2 200-5

    kt 784

    Abstract: MAT02 mat04 "direct replacement" multifunction converter transdiode power supply LM194 Precision Monolithics OP07 MAT02EH op32
    Text: BACK a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at I C = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀


    Original     		PDF LM194/394 MAT02 MAT02 X1000 kt 784 mat04 "direct replacement" multifunction converter transdiode power supply LM194 Precision Monolithics OP07 MAT02EH op32

    AD7810

    Abstract: AD7813 AD7823 AD8304 AD8305 ADL5306 ADL5306ACP ADL5306ACP-REEL7 ADL5306-EVAL
    Text: a 60dB-range 100nA-100µA Low-Cost Logarithmic Converter ADL5306 Preliminary Datasheet FEATURES Optimized for Fiber-Optic Photodiode Interfacing Measures Current Over Three Decades Law Conformance 0.3 dB from 100 nA to 100 µA Single or Dual Supply Operation (±3 V to ±5.5 V total)


    Original     		PDF 60dB-range 100nA-100 ADL5306 AD7810 AD7813 AD7823 AD8304 AD8305 ADL5306 ADL5306ACP ADL5306ACP-REEL7 ADL5306-EVAL

    AD7810

    Abstract: AD7813 AD7823 AD8305 analog divider AD8304 log10A
    Text: PRELIMINARY TECHNICAL DATA a 100dB-range 10nA-1mA Logarithmic Converter AD8305 Preliminary Technical Data FEATURES Optimized for Fiber-Optic Photodiode Interfacing Measures Current Over Five Decades Law Conformance 0.3 dB from 10 nA to 1 mA Single or Dual Supply Operation (3 V to 12 V total)


    Original     		PDF 100dB-range 10nA-1mA) AD8305 AD8305 AD7810 AD7813 AD7823 analog divider AD8304 log10A

    n channel jfet buffer amplifier

    Abstract: No abstract text available
    Text: a 120dB-range 3 nA - 3 mA Dual Logarithmic Converter Preliminary Technical Data ADL5310 FEATURES Two Independent Channels Optimized for Photodiode Interfacing Six Decade Input Dynamic Range Law Conformance 0.3dB from 3nA to 3mA Temperature-stable Logarithmic Outputs


    Original     		PDF 120dB-range 24-pin ADL5310 ADL5310 100pF n channel jfet buffer amplifier

    AD642JH

    Abstract: AD642K AD642KH transistor TO99 package
    Text: a Precision, Low Cost Dual BiFET Op Amp AD642 FEATURES Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: –124 dB @ 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 500 ␮V max Low Input Voltage Noise: 2 ␮V p-p


    Original     		PDF MIL-STD-883B AD542 AD642 AD642 C632c AD642JH AD642K AD642KH transistor TO99 package

    AD642JH

    Abstract: AD542 AD642 AD642J AD642K AD642KH AD642L AD642S AD7541 active maximally flat bandpass filter
    Text: a FEATURES Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: –124 dB @ 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 500 ␮V max Low Input Voltage Noise: 2 ␮V p-p High Open Loop Gain Low Quiescent Current: 2.8 mA max


    Original     		PDF MIL-STD-883B AD542 AD642 AD642JH AD542 AD642J AD642K AD642KH AD642L AD642S AD7541 active maximally flat bandpass filter

    2SD1841

    Abstract: No abstract text available
    Text: Ordering number:ENN3260A 2SB1231 : PNP Epitaxial Planar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other


    Original     		PDF ENN3260A 2SB1231 2SD1841 2SB1231/2SD1841 00V/25A 2SB1231/2SD1841] ITR09407 2SD1841

    2SD1842

    Abstract: 2SB1232 ITR09408 ITR09409 ITR09410
    Text: Ordering number:ENN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other


    Original     		PDF ENN3261A 2SB1232 2SD1842 2SB1232/2SD1842 00V/40A 2SB1232/2SD1842] 2SD1842 2SB1232 ITR09408 ITR09409 ITR09410

    MAT04

    Abstract: MAT04FS MAT04EY MAT04FP MAT04FY amplifier "current mirror" tpc single transistor amplifier circuits MAT-04
    Text: a FEATURES Low Offset Voltage: 200 ␮V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/√Hz max Excellent Log Conformance: rBE = 0.6 ⍀ max Matching Guaranteed for All Transistors Available in Die Form


    Original     		PDF MAT04 C00285-0-2/02 MAT04FS MAT04EY MAT04FP MAT04FY amplifier "current mirror" tpc single transistor amplifier circuits MAT-04

    transistor TOP-3 Outline Dimensions

    Abstract: AD647
    Text: a Ultralow Drift, Dual BiFET Op Amp AD647 FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Currents Crosstalk: –124 dB at 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 250 ␮V max


    Original     		PDF 20-Pin MIL-STD-883B AD547 AD647 AD647 AD647J. E-20A C683a transistor TOP-3 Outline Dimensions

    H08B

    Abstract: AD7546 AD7541 AD547 AD647 AD647J AD647JH AD647K AD647L AD647S
    Text: a Ultralow Drift, Dual BiFET Op Amp AD647 FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Currents Crosstalk: –124 dB at 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 250 ␮V max


    Original     		PDF AD647 20-Pin MIL-STD-883B AD547 AD647 E-20A H08B AD7546 AD7541 AD547 AD647J AD647JH AD647K AD647L AD647S

    AD7546

    Abstract: 10126
    Text: BACK a Ultralow Drift, Dual BiFET Op Amp AD647 FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Currents Crosstalk: –124 dB at 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 250 ␮V max


    Original     		PDF 20-Pin MIL-STD-883B AD547 AD647 AD647 AD647L AD647J. C683a AD7546 10126

    2SD1841

    Abstract: ITR09393 ITR09394 2SB1231
    Text: 2SB1231 / 2SD1841 Ordering number : EN3260B SANYO Semiconductors DATA SHEET 2SB1231 / 2SD1841 Applications • 2SB1231 : PNP Epitaxial Planar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 100V / 25A Switching Applications Motor drivers, relay drivers, converters and other general high-current switching applications.


    Original     		PDF 2SB1231 2SD1841 EN3260B 2SB1231 2SD1841 ITR09393 ITR09394

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    transistor BU 5027

    Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
    Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im


    OCR Scan     		PDF KT315 Indikatoransteuerung02 136/G ASZ1016 transistor BU 5027 transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor Transistor KU 607 MDA 2020 RFT e 355 d

    kt 784

    Abstract: No abstract text available
    Text: La/vNaæ, IVfetched Dual Monolithic Transistor ANALOG DEVICES MTO PIN CONNECTION TO-78 H Suffix FEATURES Low O ffset V o lta g e : 50 (jiV m ax Low N oise V o lta g e at 100 Hz, 1 m A : 1.0 n V /^ H z m ax High Gain (h FE): 500 m in at lc = 1 m A 300 m in at lc = 1 (¿A


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    KF 517

    Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
    Text: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"


    OCR Scan     		PDF III/18/379 KF 517 transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B

    Halbleiterbauelemente DDR

    Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
    Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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