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    TRANSISTOR KT 313 Search Results

    TRANSISTOR KT 313 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KT 313 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ABB 07 kr 240

    Abstract: ABB 07 KR 220 User Guide ABB masterpiece 200 connect PT100 sensor to 313C plc ABB masterpiece 07 SK 90 R1 ABB 07 KR 200 User Guide PT1000 thermocouple DSCA 114 communication board 07 KT 97 R0100
    Text: System Description Advant Controller 31 Intelligent Decentralized Automation System Hardware 90 Series RxD TxD BLK 07 KP 90 07 KT 97 Advant Controller 31 RUN Comm. Processor RCOM ERR Supp. Advant Controller 31 Basic Unit 07 AC 91 ERR Test Advant Controller 31


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    PDF R0201, R0101 ABB 07 kr 240 ABB 07 KR 220 User Guide ABB masterpiece 200 connect PT100 sensor to 313C plc ABB masterpiece 07 SK 90 R1 ABB 07 KR 200 User Guide PT1000 thermocouple DSCA 114 communication board 07 KT 97 R0100

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications


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    PDF EN1334E 2SC3332

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications


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    PDF EN1334F 2SC3332

    C3332

    Abstract: 2SC3332S 2sc3332
    Text: 2SC3332 Ordering number : EN1334E SANYO Semiconductors DATA SHEET 2SC3332 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown


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    PDF EN1334E 2SC3332 C3332 2SC3332S 2sc3332

    ECM1053

    Abstract: EMC1002 EMC1023 EMC1043 EMC1212
    Text: AN 13.19 Resistance Error Correction 1 Preface This application note describes the Resistance Error Correction feature available on many SMSC temperature sensor devices. 2 Audience This application note assumes that the reader has previous knowledge of how temperature sensing


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    PDF EMC1002 ECM1053 EMC1002 EMC1023 EMC1043 EMC1212

    2SA1730

    Abstract: EN3134
    Text: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


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    PDF EN3134 2SA1730 2SA1730] 2SA1730 EN3134

    2sa172

    Abstract: 2SA1728
    Text: Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.


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    PDF EN3132 2SA1728 2SA1728] 2sa172 2SA1728

    2SA1729

    Abstract: No abstract text available
    Text: Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


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    PDF EN3133 2SA1729 2SA1729] 2SA1729

    TTL 740 NAND propagation delay

    Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
    Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities


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    2044B

    Abstract: 2SA1732
    Text: Ordering number:EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions


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    PDF EN3136 2SA1732 2045B 2SA1732] 2044B 2044B 2SA1732

    c 3135-3

    Abstract: 2044B 2SA1731
    Text: Ordering number:EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions


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    PDF EN3135A 2SA1731 2045B 2SA1731] 2044B c 3135-3 2044B 2SA1731

    SGS-Thomson ball grid array

    Abstract: CB35000 ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver
    Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


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    PDF CB35000 SGS-Thomson ball grid array ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver

    7939-2

    Abstract: signal path designer CB35000 Series
    Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


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    PDF CB35000 7939-2 signal path designer CB35000 Series

    U3761MB-X

    Abstract: Ten by 32 digit two-touch indirect repertory memory SSO-44 U3761MB-XFNG 2N5401 MPSA42 U3761MB
    Text: Features Speech Circuit • • • • Adjustable DC Characteristic Symmetrical Input of Microphone Amplifier Receiving Amplifier for Dynamic or Piezo-electric Earpieces Automatic Line-loss Compensation Dialer • • • • • • • • • • • •


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    PDF 4791C U3761MB-X Ten by 32 digit two-touch indirect repertory memory SSO-44 U3761MB-XFNG 2N5401 MPSA42 U3761MB

    Untitled

    Abstract: No abstract text available
    Text: LSI LOGIC LCA100K Compacted Array Plus Series 0.7-Micron HCMOS Preliminary The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering ex tremely high performance, combined with very high gate counts. The LCA100K series is manufactured


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    PDF LCA100K

    6P45S

    Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D


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    PDF TGLIO395 III/I8/379 6P45S 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550

    KF 517

    Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B
    Text: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"


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    PDF III/18/379 KF 517 transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B

    Halbleiterbauelemente DDR

    Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
    Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    IC CA3138

    Abstract: RCA-CA3138 relay driver ckt CA3138 CA3138A transistor 9014 transistor LC 77
    Text: 3875081 G E SOLID Arrays STATE 01E 14648 _ _ _ _ _ \ ì e* ' - c/ - 3 _ j _ CA3138, C A3138 A High-Current, High-Beta N-P-N Transistor Arrays For Industrial, Com m ercial, and M ilitary Applications


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    PDF CA3138, CA3138A RCA-CA3138 andCA3138A CA3138A f----9014 92CS-26926RI IC CA3138 relay driver ckt CA3138 transistor 9014 transistor LC 77

    Untitled

    Abstract: No abstract text available
    Text: a, PRELIMINARY W91580 SERIES 57 24-MEMORY TONE/PULSE SWITCHABLE DIALER Winbond - GENERAL DESCRIPTION The W91580 dialing Series are Si-gate as necessary. They including a 16-digit X tory memory that digit CMOS ICs that provide either pulse dialing or tone


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    PDF W91580 24-MEMORY W91580 16-digit 31/32-digit memor98

    Untitled

    Abstract: No abstract text available
    Text: LSI LOGIC LCA10QK Compacted Array Plus Series 0.7-Micron HCMOS Preliminary Description The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering ex­ tremely high performance, combined with very high gate counts. The LCA100K series is manufactured


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    full subtractor circuit using decoder and nand ga

    Abstract: full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram
    Text: V L S I Technology , in c PRELIMINARY VGT100 SERIES ADVANCED CONTINUOUS GATE TECHNOLOGY 1.5-MICRON GATE ARRAY SERIES FEATURES DESCRIPTION • Available in seven array sizes from 9,000 to 50,000 usable gates 12,149 to 66,550 available gates The VGT100 Series is an advanced,


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    PDF VGT100 100-063-A-23-096 full subtractor circuit using decoder and nand ga full subtractor circuit using nor gates Remington 700 full subtractor circuit using nand gate full subtractor using NOR gate for circuit diagram

    transistor eft 323

    Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
    Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­


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