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    TRANSISTOR KL Search Results

    TRANSISTOR KL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    transistors

    Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23
    Text: Application Applikation Bipolar Transistors Bipolartransistoren Nomenclature: Benennung: B – Silicon Transistor C – LF Low Power Transistor nnn – Serial Number X or -nn – hFE Group B – Siliziumtransistor C – NF Kleinleistungstransistor nnn – Serien-Nummer


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    BC807 BC808 BC817 BC818 BC846 BC847 BC848 BC849 BC850 BC856 transistors bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    transistor BF 257

    Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
    Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität


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    BFX65

    Abstract: emitter DIN 41876
    Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Rauscharme Vorstufen und Verstärker Applications: Low noise pre stages and amplifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorströmeri


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    BFX65 BFX65 emitter DIN 41876 PDF

    ic 4033

    Abstract: 2n4033 0w08
    Text: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendung: Kleinsignal und allgem ein Application: Sm all Signal and general purposes Besondere M erkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung


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    BF314

    Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
    Text: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität


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    transistor BF 509

    Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine
    Text: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen


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    BF310

    Abstract: bf 239 basisstrom 239BF
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz in Basisschaltung Applications: General up to 100 MHz in com m on base configuration Besondere Merkmale: • Kleine R ückwirkungskapazität


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    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values


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    00R600KF3 34G3SR7 PDF

    kl2 t1 transistor

    Abstract: No abstract text available
    Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module


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    10-2I-- kl2 t1 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic


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    Untitled

    Abstract: No abstract text available
    Text: FS 30 R 06 KL Transistor Thermische Eigenschaften Transistor R th J C Elektrische Eigenschaften Electrical properties Hochstzulassiqe Werte Vces Maximum rated values 600 Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm 0,21 1,25 C/W


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    diode t27

    Abstract: No abstract text available
    Text: FF 100 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 1200 lc Therm ische Eigenschaften Thermal properties 0,075 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module


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    Q0D2D41 diode t27 PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module


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    R1200 FFrtOR12COKFf> 34032T? D002D45 PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 75 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A RthCK VcES Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module


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    FF75R 0002G3S PDF

    R1200

    Abstract: No abstract text available
    Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module


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    R1200 FFrtOR12COKFf> 34032T? D002D45 PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module


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    10-2I-- PDF

    FF 75 R 1200 KL

    Abstract: kl diode
    Text: FF 75 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 RthJC DC, pro Baustein / per module 0 ,2


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    TV horizontal Deflection Systems 25

    Abstract: No abstract text available
    Text: s= 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E 8 1 734 (N) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.


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    BUH315D ISOWATT218 BUH315D ISOWATT218 TV horizontal Deflection Systems 25 PDF

    Untitled

    Abstract: No abstract text available
    Text: FS 30 R 06 KL Therm ische Eigenschaften Thermal properties 0,21 DC, pro Baustein / per module R th J C DC, pro Zweig / per arm 1,25 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 30


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    0002GÃ PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 06 KL 2 Therm ische Eigenschaften Therm al properties 0,25 DC, pro Baustein / per module RthJC 0,50 DC, pro Baustein / per module 0,06 pro Baustein / per module RthCK 0,12 pro Baustein / per module Transistor Transistor Elektrische Eigenschaften Electrical properties


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    3MD3217 PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module


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    2Q0R06KL2/2 34G32T7 D0G2047 PDF