MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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transistors
Abstract: bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent bc337 hie bc338 equivalent bc327 equivalent BC547 sot23
Text: Application Applikation Bipolar Transistors Bipolartransistoren Nomenclature: Benennung: B – Silicon Transistor C – LF Low Power Transistor nnn – Serial Number X or -nn – hFE Group B – Siliziumtransistor C – NF Kleinleistungstransistor nnn – Serien-Nummer
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BC807
BC808
BC817
BC818
BC846
BC847
BC848
BC849
BC850
BC856
transistors
bc337 TRANSISTOR equivalent
BC337 hie hre hfe
EQUIVALENT TRANSISTOR bc547
bc547 sot 23 transistor
BC547 equivalent
bc337 hie
bc338 equivalent
bc327 equivalent
BC547 sot23
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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transistor BF 257
Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität
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BFX65
Abstract: emitter DIN 41876
Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Rauscharme Vorstufen und Verstärker Applications: Low noise pre stages and amplifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorströmeri
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BFX65
BFX65
emitter
DIN 41876
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ic 4033
Abstract: 2n4033 0w08
Text: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendung: Kleinsignal und allgem ein Application: Sm all Signal and general purposes Besondere M erkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung
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BF314
Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Text: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität
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transistor BF 509
Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine
Text: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen
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BF310
Abstract: bf 239 basisstrom 239BF
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz in Basisschaltung Applications: General up to 100 MHz in com m on base configuration Besondere Merkmale: • Kleine R ückwirkungskapazität
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values
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00R600KF3
34G3SR7
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kl2 t1 transistor
Abstract: No abstract text available
Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module
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10-2I--
kl2 t1 transistor
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic
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Untitled
Abstract: No abstract text available
Text: FS 30 R 06 KL Transistor Thermische Eigenschaften Transistor R th J C Elektrische Eigenschaften Electrical properties Hochstzulassiqe Werte Vces Maximum rated values 600 Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm 0,21 1,25 C/W
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diode t27
Abstract: No abstract text available
Text: FF 100 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 1200 lc Therm ische Eigenschaften Thermal properties 0,075 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module
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Q0D2D41
diode t27
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Untitled
Abstract: No abstract text available
Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module
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R1200
FFrtOR12COKFf>
34032T?
D002D45
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Untitled
Abstract: No abstract text available
Text: FF 75 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 75 A RthCK VcES Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module
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FF75R
0002G3S
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R1200
Abstract: No abstract text available
Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module
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R1200
FFrtOR12COKFf>
34032T?
D002D45
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Untitled
Abstract: No abstract text available
Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module
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10-2I--
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FF 75 R 1200 KL
Abstract: kl diode
Text: FF 75 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 RthJC DC, pro Baustein / per module 0 ,2
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TV horizontal Deflection Systems 25
Abstract: No abstract text available
Text: s= 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E 8 1 734 (N) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.
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BUH315D
ISOWATT218
BUH315D
ISOWATT218
TV horizontal Deflection Systems 25
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Untitled
Abstract: No abstract text available
Text: FS 30 R 06 KL Therm ische Eigenschaften Thermal properties 0,21 DC, pro Baustein / per module R th J C DC, pro Zweig / per arm 1,25 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 30
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0002GÃ
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Untitled
Abstract: No abstract text available
Text: FF 50 R 06 KL 2 Therm ische Eigenschaften Therm al properties 0,25 DC, pro Baustein / per module RthJC 0,50 DC, pro Baustein / per module 0,06 pro Baustein / per module RthCK 0,12 pro Baustein / per module Transistor Transistor Elektrische Eigenschaften Electrical properties
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3MD3217
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Untitled
Abstract: No abstract text available
Text: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module
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2Q0R06KL2/2
34G32T7
D0G2047
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