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    TRANSISTOR KJE Search Results

    TRANSISTOR KJE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KJE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    KJE transistor

    Abstract: thyristor control spot welding circuit thyristor lead acid battery charging thyristor control arc welding rectifier circuit FSM26L0336K* ffv range FSM26V0206K KJE 17 transistor elco capacitor 16 uf 450 -550 volt 100 kvar 480 volt 3 phase power factor capacitors FPG86Y0604J
    Text: Medium Power Film Capacitors FFVE/FFVI Male and Female Connections GENERAL DESCRIPTION DC FILTERING The FFV capacitor is specifically designed for DC filtering, low reactive power. The series uses a non-impregnated metallized polypropylene or polyester dielectric, which


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    PDF S-CPEM5M806-C KJE transistor thyristor control spot welding circuit thyristor lead acid battery charging thyristor control arc welding rectifier circuit FSM26L0336K* ffv range FSM26V0206K KJE 17 transistor elco capacitor 16 uf 450 -550 volt 100 kvar 480 volt 3 phase power factor capacitors FPG86Y0604J

    15QQ

    Abstract: T0320 iCR 406 J
    Text: International ZQR Rectifier PD 9.1601 IRG4BC20FD PREUMINART INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


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    PDF IRG4BC20FD 00nof3tion T0-220AB 15QQ T0320 iCR 406 J

    6DI30B-050

    Abstract: IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149
    Text: 6DI3OB-O5CK30A — )v POWER TRANSISTOR MODULE Features •7 1 ) —?fc*i ') >? ?*'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls • 1 7 3 > Air Conditioners


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    PDF E82988 I95t/R89) 6DI30B-050 IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149

    KJE transistor

    Abstract: No abstract text available
    Text: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.


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    PDF OT-89 023b32G KJE transistor

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 023b3SQ Q017027 BFR93P OT-23

    zq 405-MF

    Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
    Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070

    Transistor BSX 47-10

    Abstract: Transistor BSX 45-10 Q60218-X45-V10 Q60218-X45-V16 TT 46 N 16 LOF 10HS BSX45 Q60218-X45-V6 BSX47 Q60218-X46-V16
    Text: BSX 45, BSX 46, BSX 47 NPN Transistor for AF am plifier and switching applications BSX 45, BSX 46,and BSX 47 are epitaxial NPN silicon Planartransistors in a case 5 C 3 DIN 41873 TO -39 . Their collectors are electrically connected to their cases. The transistors are particularly suitable for AF amplifiers and AF switching applications


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    PDF Q60218-X45-V6 Q60218-X45-V10 Q60218-X45-V16 Q60218-X46-V6 Q60218-X46-V10 Q60218-X46-V16 Q60218-X47-V6 Q60218-X47-V10 15mA- BSX45, Transistor BSX 47-10 Transistor BSX 45-10 TT 46 N 16 LOF 10HS BSX45 BSX47

    TT 46 N 16 LOF

    Abstract: Transistor BSX 45-10 Transistor BSX 47-10 Transistor BSX 28 Q60218-X45-V10 bsx 46-16 BSX45 Q60218-X45-V16 Transistor BSX45 Q60218-X45-V6
    Text: BSX 45, BSX 46, BSX 47 NPN Transistor for AF am plifier and switching applications BSX 45, BSX 46,and BSX 47 are epitaxial NPN silicon Planartransistors in a case 5 C 3 DIN 41873 TO -39 . Their collectors are electrically connected to their cases. The transistors are particularly suitable for AF amplifiers and AF switching applications


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    PDF Q60218-X45-V6 Q60218-X45-V10 Q60218-X45-V16 Q60218-X46-V6 Q60218-X46-V10 Q60218-X46-V16 Q60218-X47-V6 Q60218-X47-V10 15mA- BSX45, TT 46 N 16 LOF Transistor BSX 45-10 Transistor BSX 47-10 Transistor BSX 28 bsx 46-16 BSX45 Transistor BSX45

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. U n it in mm 1S.8±0.5. 03.6±O.2 • • H ig h sp e e d • Low Satu ration Voltage : VQE say = 3.4V (Max. • 3-5 High Input Impedance


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    PDF GT40M101

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.


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    PDF BFR93A OT-23

    2SA236

    Abstract: 2SA2362
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 200Mc) 200Mc 2SA236 2SA2362

    2SD627

    Abstract: TI15J 2sb644
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    BCY77VII

    Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


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    PDF BCY79 BCY77, BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H BCY77VII BCY78X BCY79 BCY 791x BCY77VIII BCY77 Q62702-C327-V1 1Zv transistor

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    SR 506A

    Abstract: h13-506a HI1-508A hi1-507 h13-507a HI1-0506A-2 HI1-0506A-5 HI1-0506A-8 HI1-0507A-8 HI3-0506A-5
    Text: H a HI-506A, HI-507A HI-508A, HIS09A r r i s semiconductor August 1997 1 6 -C h a n n e l, 8 -C h a n n e l, D iffe re n tial 8 -C h a n n e l and D iffe ren tial 4 -C h a n n e l, C M O S A n a lo g M U X s w ith A c tiv e O v e rv o lta g e P ro tectio n


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    PDF HI-506A, HI-507A HI-508A, HI-509A 16-Channel, 500ns HI1-0506A-2 HI1-0506A-5 HI-507A, SR 506A h13-506a HI1-508A hi1-507 h13-507a HI1-0506A-8 HI1-0507A-8 HI3-0506A-5

    DAC89EX

    Abstract: BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555
    Text: PM 11984DATA B O O K The P M I C o m m itm e n t P M I is c o m m itte d to b u ild in g lo n g te rm c u s to m e r re la tio n s h ip s resulting in m u tu a l g ro w th . At PM I w e d e d ic a t e ourselves to le a d e rs h ip in c u s to m e r service,


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    PDF 11984DATA bey-400 011-5761-VSON-IN. DAC89EX BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


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    PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    HIN238

    Abstract: HIN230
    Text: H I N 2 3 0 t h r u H IN 2 4 1 February 1999 Data Sheet +5V Powered RS-232 Transmitters/Receivers File N um b er 3138.5 Features • Meets All RS-232E and V.28 Specifications The HIN230-HIN241 family of RS-232 transmitters/receivers interface circuits meet all EIA RS-232E and V.28 specifications,


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    PDF RS-232 HIN230-HIN241 RS-232E HIN231 HIN239) HIN233 HIN235 HIN232s HIN238 HIN230

    SN7441

    Abstract: 54175 TFK 404 MM1402a equivalent SD300 N74141 SN7401 3 BB 4 SO 5 CON 6 RAY 7 CC 8 SI 9 RB 10 RG 11 VE
    Text: NUMERICAL INDEX FUNCTIONAL INDEX SALES OFFICES Copyright 1974 S IG N E T IC S C O R P O R A T IO N Signetics Corporation reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible product.


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    PDF 74S114N N74S114B 74S15A 74S22N 74S20A 74S22A 74S40N 74S40A 74S64N 74S64A SN7441 54175 TFK 404 MM1402a equivalent SD300 N74141 SN7401 3 BB 4 SO 5 CON 6 RAY 7 CC 8 SI 9 RB 10 RG 11 VE

    HIN200

    Abstract: HIN201 HIN203 HIN205 HIN209 HIN213
    Text: HIN200 thru HIN213 Semiconductor +5V Powered RS-232 Transmitters/Receivers with 0.1 Microfarad External Capacitors June iggs Features Description • Meets All RS-232E and V.28 Specifications The HIN200-HIN213 family of RS-232 transmitters/receivers interface circuits meet all EIA RS-232E and V.28 specifications,


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    PDF HIN200 HIN213 RS-232 RS-232E HIN203 HIN205 120kbit/s HIN213) HIN201 HIN209) HIN209 HIN213

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541