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    TRANSISTOR KJ Search Results

    TRANSISTOR KJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: S11A1 Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    Untitled

    Abstract: No abstract text available
    Text: RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2972FS,RN2973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Complementary to RN1972FS, RN1973FS


    Original     		PDF RN2972FS RN2973FS RN1972FS, RN1973FS

    tme 126

    Abstract: transistor TT 2442 MGW12N120D 3EML
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged


    Original     		PDF MGW12N120D/D MGW12N120DID tme 126 transistor TT 2442 MGW12N120D 3EML

    Untitled

    Abstract: No abstract text available
    Text: RN2972CT, RN2973CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2972CT, RN2973CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch Small Mold (6pin)


    Original     		PDF RN2972CT, RN2973CT RN1972CT RN1973CT

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK7840-55 OT223

    GS 069 LF

    Abstract: BUK437-600B IP Semiconductors A/blf 187
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK437-600B GS 069 LF BUK437-600B IP Semiconductors A/blf 187

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK552-100A/B BUK552 -100A -100B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP5N20E T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic ievel FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK552-60A/B BUK552 T0220AB

    PHT6N06LT

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET PHT6N06LT GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low


    OCR Scan     		PDF PHT6N06LT OT223 OT223. PHT6N06LT

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK481-60A OT223 i--40 OT223.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Welders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 5.4 M4 M6 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES


    OCR Scan     		PDF QM200HC-M

    transistor on 4409

    Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
    Text: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).


    OCR Scan     		PDF EN4409 2SA1830/2SC4734 2SA1830 2SC4734 2SA1830/2SC4734 transistor on 4409 on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMÒS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK555-1OOA/B BUK555 -100A -100B T0220AB BUK555-100A/B

    ixis mmo36-16

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    OCR Scan     		PDF BUK7506-30 T0220AB ixis mmo36-16

    at30b

    Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
    Text: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz


    OCR Scan     		PDF AT-30511 AT-30633 AT-30533 OT-23 OT-143 OT-23, at30b AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TLP126

    Abstract: marking TAIG
    Text: PHOTOCOUPLER GaAIAs IRED & PHOTO-TRANSISTOR TLP126 TENTATIVE DATA PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLPI26 is a small outline coupler, suitable for surface mount assembly. TLP126 consists of a photo transistor, optically


    OCR Scan     		PDF TLP126 TLPI26 TLP126 3750Vrms marking TAIG

    LD18 SOT223

    Abstract: transistor wmv 5E SOT223 IJ63 BUK482-100A LD18A
    Text: PHILIPS INTERNATIONAL bSE D • 7110a2b 00b41bcl 4bD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF 7110flSt. ODb417D BUK482-100A OT223 711002b 0Db4174 OT223. 35\im LD18 SOT223 transistor wmv 5E SOT223 IJ63 LD18A