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    TRANSISTOR KF5N50 Search Results

    TRANSISTOR KF5N50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KF5N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF5N50DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		KF5N50DS PDF

    KF5N50DS

    Abstract: KF5N50 transistor KF5n50 kf5n50 ds fast recovery diode 400v 5A transistor KF5n50ds mosfet KF5N50 IS43A mosfet KF5N50DS
    Text: SEMICONDUCTOR KF5N50DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150nS KF5N50DS Fig12. Fig13. Fig14. Fig15. KF5N50DS KF5N50 transistor KF5n50 kf5n50 ds fast recovery diode 400v 5A transistor KF5n50ds mosfet KF5N50 IS43A mosfet KF5N50DS PDF

    transistor KF5n50

    Abstract: KF5N50 mosfet KF5N50 KF5N50PZ
    Text: SEMICONDUCTOR KF5N50PZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50PZ Fig13. Fig14. Fig15. transistor KF5n50 KF5N50 mosfet KF5N50 KF5N50PZ PDF

    transistor KF5n50

    Abstract: KF5N50 KF5N50D mosfet KF5N50
    Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50D/DZ Fig13. Fig14. Fig15. transistor KF5n50 KF5N50 KF5N50D mosfet KF5N50 PDF

    KF5N50

    Abstract: transistor KF5n50 KF5N50D mosfet KF5N50
    Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50D/DZ Fig12. Fig13. Fig14. Fig15. KF5N50 transistor KF5n50 KF5N50D mosfet KF5N50 PDF

    kf5n50 ds

    Abstract: transistor KF5n50 KF5N50 KF5N50DZ
    Text: SEMICONDUCTOR KF5N50DZ/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150ns KF5N50DS) 300ns KF5N50DZ) KF5N50DZ/DS Fig13. Fig14. Fig15. kf5n50 ds transistor KF5n50 KF5N50 KF5N50DZ PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50P/F/PZ/FZ PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		KF5N50PS/FS PDF

    KF3N50

    Abstract: KF5N
    Text: SEMICONDUCTOR KF5N50DZ/IZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		KF5N50DZ/IZ KF5N50DZ Fig13. Fig14. Fig15. KF3N50 KF5N PDF

    transistor KF5n50fza

    Abstract: mosfet KF5N50 KF5N50F KF5N50FS
    Text: SEMICONDUCTOR KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150ns KF5N50FSA) 300ns KF5N50FZA) KF5N50FZA/FSA dI/dt100A/, transistor KF5n50fza mosfet KF5N50 KF5N50F KF5N50FS PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		KF5N50FZA/FSA PDF

    kf5n50

    Abstract: transistor KF5n50 mosfet KF5N50 KF5N50DZ transistor KF5n50 102 kf5n50 ds KF5N50D kf5n50ds DIODE MARKING 534 "Field Effect Transistor"
    Text: SEMICONDUCTOR KF5N50DR/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		KF5N50DR/DS 150ns Fig13. Fig14. Fig15. kf5n50 transistor KF5n50 mosfet KF5N50 KF5N50DZ transistor KF5n50 102 kf5n50 ds KF5N50D kf5n50ds DIODE MARKING 534 "Field Effect Transistor" PDF

    transistor KF5n50

    Abstract: KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P
    Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150ns KF5N50PS/FS KF5N50PS EnerFig14. Fig15. Fig16. Fig17. transistor KF5n50 KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P PDF

    transistor KF5n50

    Abstract: KF5N50 mosfet KF5N50 KF5N50P KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ
    Text: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50P/F/PZ/FZ KF5N50P, KF5N50PZ KF5N50P KF5N50PZ Fig15. Fig16. Fig17. transistor KF5n50 KF5N50 mosfet KF5N50 KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ PDF

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 PDF