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    TRANSISTOR KD 321 Search Results

    TRANSISTOR KD 321 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KD 321 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR kd 321

    Abstract: CD4048BMS IOH15 ic 7912 circuit diagram EXPAND15
    Text: CD4048BMS CMOS Multifunction Expandable 8 Input Gate December 1992 Features Pinout • High-Voltage Type 20V Rating CD4048BMS TOP VIEW • Three State Output • Many Logic Functions Available in One Package 16 VDD J (OUTPUT) 1 • Standardize, Symmetrical Output Characteristics


    Original     		PDF CD4048BMS 100nA TRANSISTOR kd 321 CD4048BMS IOH15 ic 7912 circuit diagram EXPAND15

    AN9881

    Abstract: TRANSISTOR kd 321 calculation of IGBT snubber igbt spice A150 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit IGBT JUNCTION TEMPERATURE CALCULATION igbt testing
    Text: Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN9881 Authors: Alain Laprade and Ron H. Randall An analysis is presented describing a numerical algorithm that develops loss prediction techniques for IGBTs operating in switched mode power circuits. A 600W zero-current


    Original     		PDF AN9881 AN9881 TRANSISTOR kd 321 calculation of IGBT snubber igbt spice A150 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit IGBT JUNCTION TEMPERATURE CALCULATION igbt testing

    calculation of IGBT snubber

    Abstract: IGBT JUNCTION TEMPERATURE CALCULATION failure analysis IGBT IGBT ac switch circuit IGBT snubber VF25 A150 AN75 power factor correction boost topology HGTG30N60B3
    Text: Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors: Alain Laprade and Ron H. Randall /Title AN75 0 Subect Nume ical etho for valuting GBT osse ) Autho Alexnder raig) Keyords Nume ical etho for valuting GBT osse , nteril


    Original     		PDF AN-7520 calculation of IGBT snubber IGBT JUNCTION TEMPERATURE CALCULATION failure analysis IGBT IGBT ac switch circuit IGBT snubber VF25 A150 AN75 power factor correction boost topology HGTG30N60B3

    calculation of IGBT snubber

    Abstract: fairchild nomenclature A150 AN-7520 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit mathcad failure analysis IGBT IGBT JUNCTION TEMPERATURE CALCULATION
    Text: Numerical Method for Evaluating IGBT Losses Application Note January 2000 AN-7520 Authors: Alain Laprade and Ron H. Randall Title N98 bt ume al tho or alung BT sses utho exder aig eyrds ume al tho or alung BT sses, errpoon, minctor, a- An analysis is presented describing a numerical algorithm


    Original     		PDF AN-7520 calculation of IGBT snubber fairchild nomenclature A150 AN-7520 HGTG30N60B3 HGTG40N60B3 IGBT ac switch circuit mathcad failure analysis IGBT IGBT JUNCTION TEMPERATURE CALCULATION

    MC34182D

    Abstract: IC CD 4030 pin configuration MC34182 equivalent e51 network ic diagram vco with opamp
    Text: MC10E197 5V ECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.


    Original     		PDF MC10E197 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1568 AN1596 MC34182D IC CD 4030 pin configuration MC34182 equivalent e51 network ic diagram vco with opamp

    detector circuit using OP-AMP

    Abstract: root locus MC34182D E197 MC100E197FN MC100E197FNR2 MC10E197 MC10E197FN MC10E197FNR2
    Text: MC10E197 Advance Information 5VĄECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future


    Original     		PDF MC10E197 MC10E197 r14525 MC10E197/D detector circuit using OP-AMP root locus MC34182D E197 MC100E197FN MC100E197FNR2 MC10E197FN MC10E197FNR2

    MC34182D

    Abstract: E197 MC10E197 MC10E197FN MC10E197FNR2 mc34182
    Text: MC10E197 5VĄECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.


    Original     		PDF MC10E197 MC10E197 r14525 MC10E197/D MC34182D E197 MC10E197FN MC10E197FNR2 mc34182

    phase lock loop 565

    Abstract: MC34182D E197 MC10E197 MC10E197FN MC10E197FNR2 detector circuit using OP-AMP
    Text: MC10E197 5VĄECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.


    Original     		PDF MC10E197 MC10E197 r14525 MC10E197/D phase lock loop 565 MC34182D E197 MC10E197FN MC10E197FNR2 detector circuit using OP-AMP

    IC CD 4030 pin configuration

    Abstract: MC34182D E197 MC10E197 MC10E197FN MC10E197FNR2 root locus applications
    Text: MC10E197 5V ECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.


    Original     		PDF MC10E197 MC10E197 MC10E197/D IC CD 4030 pin configuration MC34182D E197 MC10E197FN MC10E197FNR2 root locus applications

    Untitled

    Abstract: No abstract text available
    Text: MC10E197 5V ECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.


    Original     		PDF MC10E197 MC10E197 MC10E197/D

    Diode KD 521 a ANALOG

    Abstract: LCD MODULE kp AN4105 555 timer for boost converter 339H 335H 740H AN3321 B1100-13-F S08MP
    Text: Freescale Semiconductor Application Note Document Number: AN4105 Rev. 0, 04/2010 Automotive High Brightness LED Control Based on the MC9S08MP16 microcontroller by: Oscar Camacho Automotive Systems Enablement Microcontroller Solutions Group 1 Overview This document describes the implementation of a


    Original     		PDF AN4105 MC9S08MP16 Diode KD 521 a ANALOG LCD MODULE kp AN4105 555 timer for boost converter 339H 335H 740H AN3321 B1100-13-F S08MP

    MC366-S1-C02M12-A

    Abstract: No abstract text available
    Text: SAFETY PROXIMITY SENSORS Overview With RFID safety transponders as well as magnetically coded sensors and the corresponding MSI-MC3x safety relays, Leuze electronic provides special safety systems with closed design and high-strength plastic housing for challenging application cases or for guards. This is possible because neither


    Original     		PDF RD800-x-UCA MC330 MC336 MC388 RD800 RD800 MC366-S1-C02M12-A

    cadmium sulfide photoresistor

    Abstract: heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114
    Text: Process Control Student Guide VERSION 1.0 WARRANTY Parallax Inc. warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax Inc. will, at its option, repair or replace the merchandise, or refund the


    Original     		PDF ULN2003A cadmium sulfide photoresistor heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114

    KD221203A7

    Abstract: KD524505 KD221404 KD225575 KD321408 kd424520 KD721KA1 kd2212 KD7245A1 kd221
    Text: D 0 111E R E X t>4E J> INC rnmenex m 72T4L21 0 0 0 b 5 4 ci D b4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)


    OCR Scan     		PDF 72T4L21 BP107, KD7245A1 KD721KA1 KD7212A1 KD221203A7 KD524505 KD221404 KD225575 KD321408 kd424520 kd2212 kd221

    Solitron Transistor

    Abstract: No abstract text available
    Text: 83 68 60 2 S O L I T RO N D EV IC E S _ ~bl D 6 1C 01273 INC ENGINEERING D E VICE SPECIFICATION 7 ^ 9 - ^ ’3>-3210110 D | S3tiflbD5 DD01S73 T | 1.0 SECTION I: 1.1 Construction: Transistor (Code: 91SP311of .DEVICE D E S C R I P T I O N , This device is an NPN Diffused Planar Power Transistor


    OCR Scan     		PDF 91SP311of DD01S73 C--13 Solitron Transistor

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan     		PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    2SK1719

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1719 Field Effect Transistor Silicon N Channel MOS Type L2-jt-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds(on ) = 0.08S2 (Typ.)


    OCR Scan     		PDF 2SK1719 --60V 2SK1719

    e 0123 yb

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD217 Transistor Output [CTR = 100% Min] These devices consist of two gallium arsenide infrared em itting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface


    OCR Scan     		PDF MOCD217/D e 0123 yb

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


    OCR Scan     		PDF

    Motorola ic

    Abstract: 2N6543 300 volt 5 ampere transistor a 31
    Text: MOTORCL A SC XST RS/ R F 12E D I b3b?2SM 00ä4bfc.a 7 | MOTOROLA SEMICONDUCTOR 2N6543 TECHNICAL DATA D e s ig n e r s D a ta . S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS SW ITCHM ODE S E R IE S NPN SIL IC O N POWER T R A N SIST O R S


    OCR Scan     		PDF 2N6543 Motorola ic 2N6543 300 volt 5 ampere transistor a 31

    2n9014

    Abstract: 2n4403 331 2N901 WE9140B 2N5551 CJ WE9140G WE9140 WE9140A WE9140J WE9140U
    Text: W E9140 SERIES Winbondl TONE/PULSE SWITCHABLE DIALER WITH REDIAL GENERAL DESCRIPTION The WE9140 series a re TONE / PULSE sw itchable te le p h o n e dialers with the last num ber redial memory. The ICs a re e n a b le d either DTMF or pulse d ia lin g by selectin g m o d e pin or P - T key. For p re v e n ­


    OCR Scan     		PDF WE9140 100ms 20M12 1N4148 TNR680K 220K1) 1N4731 MPSA92 2n9014 2n4403 331 2N901 WE9140B 2N5551 CJ WE9140G WE9140A WE9140J WE9140U

    transistor te 2305

    Abstract: P8000
    Text: MOTOROLA Order this document by MTP40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		PDF MTP40N1OE/D transistor te 2305 P8000

    PLL TV MODULATOR

    Abstract: tv receiver schematic diagram PHILIPS MBC237 MKA612 auo 002 uhf tv channel modulator TDA8720 TDA8720M TDA8720T Phase detector disabled
    Text: N A P C / P H I L I P S SEMICOND bûE D bbSB'ïZM 0CH07T3 321 « S I C 3 Philips Semlcond uctors Objective specification l2C-bus programmable modulator for negative video modulation and FM sound TDA8720T; TDA8720M FEATURES • Video amplifier with clamping circuit, white clip circuit


    OCR Scan     		PDF TDA8720T; TDA8720M PLL TV MODULATOR tv receiver schematic diagram PHILIPS MBC237 MKA612 auo 002 uhf tv channel modulator TDA8720 TDA8720M TDA8720T Phase detector disabled