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    TRANSISTOR K41 Search Results

    TRANSISTOR K41 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K41 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    transistor 45 f 122

    Abstract: BUK416-1000AE K416 K4161 BUK416-1000BE
    Text: P h ilip s C o m p o n e n ts Data sheet status Prelim inary specification date of issue March 1991 BU K416-10OOAE/BE PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in ISO TO P envelope.


    OCR Scan     		BUK416-1000AE/BE BUK416 -1000AE -1000BE OT227B 0445M4 transistor 45 f 122 BUK416-1000AE K416 K4161 BUK416-1000BE PDF

    BUK416-100AE

    Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
    Text: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in


    OCR Scan     		G03D440 BUK416-1OOAE/BE OT227B BUK416 bb53R31 BUK416-1OO0E BUK416-100AE YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x PDF

    d1941

    Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ LEAD PLATING Note


    Original     		2SK4144 2SK4144 2SK4144-AZ 2SK4144-S12-AZ O-220 d1941 K4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41 PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    buk418

    Abstract: BUK416-200AE lola BUK416-200BE 200AE
    Text: PHILIPS INTERNATIONAL LSE D • 7110A2b DDb3fifil 447 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISO TO P envelope. The device is intended for use in


    OCR Scan     		7110A2b BUK416-200AE/BE OT227B BUK416 -200AE 200BE BUK41B-S0ME buk418 BUK416-200AE lola BUK416-200BE 200AE PDF

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


    Original     		SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 PDF

    transistor K4145

    Abstract: 2SK4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    transistor K4145

    Abstract: 2sk4145
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    K4143

    Abstract: TRANSISTOR K4143 D1877 transistor equivalent k4143 2SK4143 NEC TRANSISTOR MARKING CODE k414 2SK4143-S17-AY code marking NEC marking transistor KE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4143 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on 1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)


    Original     		2SK4143 2SK4143 2SK4143-S17-AY O-220 K4143 TRANSISTOR K4143 D1877 transistor equivalent k4143 NEC TRANSISTOR MARKING CODE k414 2SK4143-S17-AY code marking NEC marking transistor KE PDF

    2SK520

    Abstract: k41 transistor transistor k41 transistor k42 marking k42 AM radio K447
    Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK 520 HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in m illim » t» ri • Good for AM Radio Application • High I y,s I I yfs I = 17 mS TYP. 2 8 *0 -2


    OCR Scan     		2SK520 2SK520 k41 transistor transistor k41 transistor k42 marking k42 AM radio K447 PDF

    K4175

    Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor
    Text: PH ILIP S I NTE RN ATI ON AL bSE D H 7 1 1 0 6 2 b 00b3flfib T5^ « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in IS O T O P envelope. The device is intended for use in


    OCR Scan     		711DflSb BUK417-500AE/BE OT227B BUK417 -500AE -500BE BUK417-500AE K4175 BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500B BUK417-500BE transistor bc 148 BC 148 transistor bc 147 B transistor PDF

    2SK4111

    Abstract: K4111 TRANSISTOR K4111 K4111 POWER TRANSISTOR 2SK4111,K4111
    Text: 2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4111 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.)


    Original     		2SK4111 SC-67 2-10R1B 2SK4111 K4111 TRANSISTOR K4111 K4111 POWER TRANSISTOR 2SK4111,K4111 PDF

    2SK4114

    Abstract: k4114 toshiba k4114 2SK41
    Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		2SK4114 2SK4114 k4114 toshiba k4114 2SK41 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)


    Original     		2SK4107 PDF

    K4113

    Abstract: 2SK4113 2SK41
    Text: 2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4113 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK4113 K4113 2SK4113 2SK41 PDF

    k4112 transistor

    Abstract: 2SK4112 k4112 transistor k4112 2SK41
    Text: 2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4112 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK4112 SC-67 2-10R1B k4112 transistor 2SK4112 k4112 transistor k4112 2SK41 PDF

    transistor k4110

    Abstract: 2sk4110 k4110 transistor transistor 2SK4110 K4110 2SK4110,K4110 2SK41
    Text: 2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4110 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2SK4110 SC-67 2-10R1B transistor k4110 2sk4110 k4110 transistor transistor 2SK4110 K4110 2SK4110,K4110 2SK41 PDF

    k4107

    Abstract: toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107
    Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.)


    Original     		2SK4107 k4107 toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107 PDF

    2SK41

    Abstract: k4114
    Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		2SK4114 2SK41 k4114 PDF