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    TRANSISTOR K402 Search Results

    TRANSISTOR K402 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K402 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K401

    Abstract: K402 K404 K4021 transistor k402 darlington transistor SMD NPN
    Text: Photocoupler K401 • K402 • K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package.


    Original     		16-pin AC3750Vrms K401 K402 K404 K4021 transistor k402 darlington transistor SMD NPN PDF

    K4026

    Abstract: 2SK4026
    Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications 1.5 ± 0.2 Unit: mm Features 1.6 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK4026 K4026 2SK4026 PDF

    K4021

    Abstract: 2SK4021
    Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.)


    Original     		2SK4021 K4021 2SK4021 PDF

    K4026

    Abstract: No abstract text available
    Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications 1.5 ± 0.2 Unit: mm Features 1.6 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK4026 K4026 PDF

    K4021

    Abstract: 2SK4021
    Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.)


    Original     		2SK4021 K4021 2SK4021 PDF

    K4021

    Abstract: 2SK4021
    Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulator and DC/DC Converter Applications Motor Drive Applications １．５±０．２ Unit: mm Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) Enhancement mode


    Original     		2SK4021 K4021 2SK4021 PDF

    K4023

    Abstract: 2SK4023
    Text: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter 1.5 ± 0.2 Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.)


    Original     		2SK4023 K4023 2SK4023 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)


    Original     		2SK4022 PDF

    2SK4020

    Abstract: K4020
    Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.56 Ω (typ.)


    Original     		2SK4020 2SK4020 K4020 PDF

    2SK4022

    Abstract: No abstract text available
    Text: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)


    Original     		2SK4022 2SK4022 PDF

    K4021

    Abstract: 2SK4021
    Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulator and DC/DC Converter Applications Motor Drive Applications １．５±０．２ Unit: mm z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		2SK4021 K4021 2SK4021 PDF

    K4020

    Abstract: No abstract text available
    Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 z 4-V gate drive 0.6 MAX. z High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK4020 K4020 PDF

    K4020

    Abstract: 2SK4020
    Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z Low leakage current : IDSS = 100 A (max) (VDS = 200 V)


    Original     		2SK4020 K4020 2SK4020 PDF

    K4023

    Abstract: 2SK4023
    Text: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.)


    Original     		2SK4023 K4023 2SK4023 PDF

    2SK4023

    Abstract: K4023
    Text: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulators and DC-DC Converters 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 6.5 ± 0.2 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.)


    Original     		2SK4023 2SK4023 K4023 PDF

    K4021

    Abstract: 2SK4021
    Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulator and DC/DC Converter Applications Motor Drive Applications １．５±０．２ Unit: mm : IDSS = 100 µA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		2SK4021 K4021 2SK4021 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm ５．２±０．２ １．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.)


    Original     		2SK4023 PDF

    k4026

    Abstract: 2SK4026
    Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １． ６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK4026 k4026 2SK4026 PDF

    2SK4020

    Abstract: K4020
    Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ６．５±０．２ ５．２±０．２ ０．６ MAX． Low leakage current


    Original     		2SK4020 2SK4020 K4020 PDF

    K4026

    Abstract: 2SK4026
    Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK4026 K4026 2SK4026 PDF

    K4026

    Abstract: 2SK4026
    Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		2SK4026 K4026 2SK4026 PDF

    2SK4022

    Abstract: No abstract text available
    Text: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ １．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)


    Original     		2SK4022 2SK4022 PDF

    k4023

    Abstract: No abstract text available
    Text: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm ６．５±０．２ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.)


    Original     		2SK4023 k4023 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ １．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)


    Original     		2SK4022 PDF