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    TRANSISTOR K4013 Search Results

    TRANSISTOR K4013 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K4013 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 PDF

    transistor k4013

    Abstract: k4013 K4013 transistor 2SK4013 MARKING toshiba 133
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK4013 transistor k4013 k4013 K4013 transistor 2SK4013 MARKING toshiba 133 PDF

    K4013

    Abstract: 2SK4013 transistor k4013 K4013 transistor
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 K4013 2SK4013 transistor k4013 K4013 transistor PDF

    2SK4013

    Abstract: transistor k4013 K4013 transistor k4013
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK4013 2SK4013 transistor k4013 K4013 transistor k4013 PDF

    k4013

    Abstract: 2SK4013 transistor k4013 K4013 transistor
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 k4013 2SK4013 transistor k4013 K4013 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 PDF

    stk 490 110

    Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
    Text: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be


    OCR Scan     		EN4830A STK400-020 0Cllb57fl stk 490 110 stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010 PDF

    stk*470 090

    Abstract: stk 490 070 4822a stk 490 040 stk*0460 Sanyo STK 098 stk 490 -110 STK 290 010 stk 490 110 stk*401-130
    Text: Ordering number : EN4022A Thick Film Hybrid 1C STK400-290 No. 4822A AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) I Package Dimensions Overview Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be


    OCR Scan     		EN4022A STK400-290 4086ility stk*470 090 stk 490 070 4822a stk 490 040 stk*0460 Sanyo STK 098 stk 490 -110 STK 290 010 stk 490 110 stk*401-130 PDF

    k30206

    Abstract: SENSOR HALL 946 s 452 kd 2060 transistor
    Text: Complete Catalogue 4/2015 Residual current monitoring in grounded power supply systems with residual current relay type RCM1000V and current transformers type STWA3D Meas uring, C ontr olling, Moni t o r i n g o n h i g h e s t l e v e l Editorial Besser, schneller, innovativer, das ist unsere Maxime bei


    Original     		RCM1000V D-74523 k30206 SENSOR HALL 946 s 452 kd 2060 transistor PDF