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    TRANSISTOR K38 Search Results

    TRANSISTOR K38 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K38 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


    Original     		SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 2.7 mΩ (typ.)  High forward transfer admittance


    Original     		2SK3843 125ruments, PDF

    k3878

    Abstract: transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 k3878 transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor PDF

    K3869

    Abstract: Toshiba K3869 K3869 Transistor 2SK3869 k386
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 Toshiba K3869 K3869 Transistor 2SK3869 k386 PDF

    transistor Toshiba K3878

    Abstract: K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 transistor Toshiba K3878 K3878 toshiba k3878 k3878 toshiba APPLICATION NOTE K3878 transistor k3878 toshiba transistor k3878 2SK3878 2sk3878 toshiba K3878 transistor PDF

    transistor Toshiba K3878

    Abstract: k3878 toshiba toshiba k3878 k3878 APPLICATION NOTE K3878 transistor k3878 2SK3878 2sk3878 toshiba
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 transistor Toshiba K3878 k3878 toshiba toshiba k3878 k3878 APPLICATION NOTE K3878 transistor k3878 2SK3878 2sk3878 toshiba PDF

    K3869

    Abstract: K3869 Transistor Toshiba K3869 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 K3869 Transistor Toshiba K3869 2SK3869 PDF

    Toshiba K3869

    Abstract: K3869 Transistor K3869 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 Toshiba K3869 K3869 Transistor K3869 2SK3869 PDF

    k3869

    Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 k3869 Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869 PDF

    K3869 Transistor

    Abstract: Toshiba K3869 2SK3667,2SK3869,K3869,
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 Transistor Toshiba K3869 2SK3667,2SK3869,K3869, PDF

    k3878

    Abstract: transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65 PDF

    k3878

    Abstract: transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 APPLICATION NOTE K3878 2SK3878 2SK3878 equivalent transistor k3878 k3878 toshiba SC-65 2sk3878 toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOS III 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.)  High forward transfer admittance


    Original     		2SK3847 PDF

    transistor Toshiba K3878

    Abstract: k3878 tr/K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		2SK3878 transistor Toshiba K3878 k3878 tr/K3878 transistor PDF

    BSS138DW-7-F

    Abstract: TRANSISTOR K38 BSS138DW BSS138DW-7
    Text: BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Available in Lead Free/RoHS Compliant Version Note 4


    Original     		BSS138DW AEC-Q101 OT-363 J-STD-020C MIL-STD-202, DS30203 BSS138DW-7-F TRANSISTOR K38 BSS138DW BSS138DW-7 PDF

    K38 SOT-23

    Abstract: marking k38
    Text: BSS138 ADVANCE INFORMATION N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · ·


    Original     		BSS138 OT-23 OT-23, MIL-STD-202, 250mA -250mA 300ms, DS30144 K38 SOT-23 marking k38 PDF

    equivalent transistor k38

    Abstract: K38 SOT-23 bss138 k38
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant Note 3


    Original     		BSS138 AEC-Q101 OT-23 OT-23 J-STD-020C MIL-STD-202, DS30144 equivalent transistor k38 K38 SOT-23 bss138 k38 PDF

    RP112N321D

    Abstract: No abstract text available
    Text: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,


    Original     		RP112x 150mA EA-258-131024 10kHz 100kHz. Room403, Room109, 10F-1, RP112N321D PDF

    spice model BSS138W

    Abstract: TRANSISTOR K38 BSS138* spice model BSS138W BSS138W-7 BSS138W-7-F J-STD-020A
    Text: SPICE MODELS: BSS138W BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Also Available in Lead Free Version A B C G Mechanical Data ·


    Original     		BSS138W OT-323, J-STD-020A MIL-STD-202, DS30206 spice model BSS138W TRANSISTOR K38 BSS138* spice model BSS138W BSS138W-7 BSS138W-7-F J-STD-020A PDF

    K38 SOT-23

    Abstract: equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		BSS138 AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30144 K38 SOT-23 equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138 PDF

    k3843

    Abstract: k3843 circuit 2sk3843
    Text: 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance : |Yfs| = 120 S (typ.)


    Original     		2SK3843 k3843 k3843 circuit 2sk3843 PDF

    k3846

    Abstract: No abstract text available
    Text: 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.)  High forward transfer admittance : |Yfs| = 33 S (typ.)


    Original     		2SK3846 k3846 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF