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    TRANSISTOR K3498 Search Results

    TRANSISTOR K3498 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K3498 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 • High forward transfer admittance: |Yfs| = 0.6 S (typ.) Unit: mm


    Original     		2SK3498 PDF

    K3498

    Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 K3498 K3498 Transistor 2SK3498 transistor k3498 k349 PDF

    K3498

    Abstract: 2SK3498 K3498 Transistor K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)


    Original     		2SK3498 K3498 2SK3498 K3498 Transistor K349 PDF

    K3498 Transistor

    Abstract: k3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: ïYfsï = 0.6 S (typ.)


    Original     		2SK3498 K3498 Transistor k3498 PDF

    K3498

    Abstract: K3498 Transistor transistor k3498 2SK3498 K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 K3498 K3498 Transistor transistor k3498 2SK3498 K349 PDF

    k3498

    Abstract: 2SK3498 K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 k3498 2SK3498 K3498 Transistor PDF

    K3498

    Abstract: K3498 Transistor 2SK3498 K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 K3498 K3498 Transistor 2SK3498 K349 PDF

    K3498

    Abstract: 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 to150 K3498 2SK3498 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 PDF

    K3498

    Abstract: No abstract text available
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 to150 K3498 PDF

    K3498

    Abstract: K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 to150 K3498 K3498 Transistor PDF

    K3498

    Abstract: K3498 Transistor 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 K3498 K3498 Transistor 2SK3498 PDF

    k3498

    Abstract: 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 to150 k3498 2SK3498 PDF