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    TRANSISTOR K33 Search Results

    TRANSISTOR K33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


    Original     		PDF SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2


    Original     		PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7

    k3342

    Abstract: 2sk3342 2-7J1B
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK3342 k3342 2sk3342 2-7J1B

    k3342

    Abstract: No abstract text available
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK3342 k3342

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source on-resistance: RDS(ON) = 15 Unit: mm (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    k3301

    Abstract: 2SK3301
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301 2SK3301

    2SK3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    2SK3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301

    k3313

    Abstract: 2SK3313
    Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulatorand DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) Built−in high−speed free−wheeling diode


    Original     		PDF 2SK3313 k3313 2SK3313

    K3302

    Abstract: transistor no k3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3302 K3302 transistor no k3302

    transistor no k3302

    Abstract: 2SK3302 K3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3302 transistor no k3302 2SK3302 K3302

    K3371

    Abstract: No abstract text available
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		PDF 2SK3371 K3371

    K3302

    Abstract: transistor no k3302 2SK3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3302 K3302 transistor no k3302 2SK3302

    2SK3309

    Abstract: No abstract text available
    Text: 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3309 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.)


    Original     		PDF 2SK3309 2SK3309

    2SK3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Unit: mm Low drain-source on-resistance: RDS(ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301

    2SK3312

    Abstract: No abstract text available
    Text: 2SK3312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-−MOSV 2SK3312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3312 2SK3312

    2SK3301

    Abstract: k3301
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 2SK3301 k3301

    k3314

    Abstract: 2SK3314
    Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode


    Original     		PDF 2SK3314 k3314 2SK3314

    2SK3371

    Abstract: No abstract text available
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		PDF 2SK3371 2SK3371

    k337

    Abstract: 2SK3371
    Text: 2SK3371 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • · · · Low drain-source ON resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)


    Original     		PDF 2SK3371 k337 2SK3371

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR _ 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUM BER PACKAGE 2S K3356 T O -3 P designed for high current switching applications.


    OCR Scan     		PDF 2SK3356 2SK3356 K3356 D14133EJ1V0DS00 MP-88)

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF