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    TRANSISTOR K31 Search Results

    TRANSISTOR K31 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sf 128 transistor

    Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
    Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.


    Original     		PDF SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47

    2SK3126

    Abstract: No abstract text available
    Text: 2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3126 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance : |Yfs| = 7.5 S (typ.) Low leakage current


    Original     		PDF 2SK3126 2SK3126

    K3117

    Abstract: 2SK3117
    Text: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3117 Chopper Regulator DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		PDF 2SK3117 K3117 2SK3117

    K3NR-NB2A

    Abstract: K3NR-NB1A EN61010-1 IEC1010-1 K3NR-NB1C k3nrnb1a K3NR-NB2C omron proximity sensor k3nrnb1
    Text: Frequency/Rate Meter K3NR High-speed, Intelligent Interface Modules with Seven Operating Modes Convert Single or Dual Input Pulses to Display Values 50-kHz input range and 0.006% accuracy for sophisticated control. A wide selection of outputs: relay, transistor, BCD,


    Original     		PDF 50-kHz N087-E1-1A 0698-1M K3NR-NB2A K3NR-NB1A EN61010-1 IEC1010-1 K3NR-NB1C k3nrnb1a K3NR-NB2C omron proximity sensor k3nrnb1

    k31c2

    Abstract: XM2A-2501 XM2A-3701 XM2S-2511 XM2D-0901 EN61010-1 IEC1010-1 K31-L1 K31FLK6 K31-FLK3
    Text: Period Meter K3NP An Ideal Interface for Easily Measuring the Time Interval 50-kHz input range and 0.08% accuracy for sophisticated control. A wide selection of outputs: relay, transistor, BCD, linear, or communications. Maximum/Minimum value hold, set value write


    Original     		PDF 50-kHz N088-E1-1A 0698-1M k31c2 XM2A-2501 XM2A-3701 XM2S-2511 XM2D-0901 EN61010-1 IEC1010-1 K31-L1 K31FLK6 K31-FLK3

    K3128

    Abstract: 2SK3128
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128

    T 3036

    Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
    Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,


    Original     		PDF 2N2377 MIL-S-19SCW288 MIL-s-19500/288 T 3036 bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036

    2SK3130

    Abstract: K3130
    Text: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original     		PDF 2SK3130 2SK3130 K3130

    2SK3130

    Abstract: No abstract text available
    Text: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original     		PDF 2SK3130 2SK3130

    k312

    Abstract: No abstract text available
    Text: 2SK3129 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3129 Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original     		PDF 2SK3129 k312

    K3127

    Abstract: 2SK3127
    Text: 2SK3127 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VI 2SK3127 Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 38 S (typ.)


    Original     		PDF 2SK3127 K3127 2SK3127

    2SK3130

    Abstract: No abstract text available
    Text: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original     		PDF 2SK3130 2SK3130

    2SK3129

    Abstract: SC-65
    Text: 2SK3129 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3129 Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original     		PDF 2SK3129 2SK3129 SC-65

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    K3128

    Abstract: 2SK3128 k312
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128 k312

    RP112N321D

    Abstract: No abstract text available
    Text: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,


    Original     		PDF RP112x 150mA EA-258-131024 10kHz 100kHz. Room403, Room109, 10F-1, RP112N321D

    Untitled

    Abstract: No abstract text available
    Text: 2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)


    Original     		PDF 2SK3130

    K3117

    Abstract: 2SK3117
    Text: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3117 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		PDF 2SK3117 K3117 2SK3117

    2SK3126

    Abstract: K3126
    Text: 2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3126 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.) z Low leakage current


    Original     		PDF 2SK3126 2SK3126 K3126

    2SK3129

    Abstract: SC-65
    Text: 2SK3129 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3129 Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original     		PDF 2SK3129 2SK3129 SC-65

    K3117

    Abstract: 2SK3117 K311
    Text: 2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3117 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.21 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		PDF 2SK3117 K3117 2SK3117 K311

    K3128

    Abstract: 2SK3128
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128

    K3128

    Abstract: 2SK3128
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128

    K3126

    Abstract: 2SK3126
    Text: 2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3126 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.) z Low leakage current


    Original     		PDF 2SK3126 K3126 2SK3126