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    TRANSISTOR K2996 Search Results

    TRANSISTOR K2996 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

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    k2996

    Abstract: k2996 transistor K2996 equivalent equivalent k2996 transistor k2996 2sk2996 k299 transistor 2sk2996 2SK2996 equivalent toshiba motor
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		2SK2996 k2996 k2996 transistor K2996 equivalent equivalent k2996 transistor k2996 2sk2996 k299 transistor 2sk2996 2SK2996 equivalent toshiba motor PDF

    K2996

    Abstract: k2996 transistor transistor k2996 2SK2996 toshiba k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		2SK2996 K2996 k2996 transistor transistor k2996 2SK2996 toshiba k2996 PDF

    k2996

    Abstract: k2996 transistor k299 transistor k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		2SK2996 k2996 k2996 transistor k299 transistor k2996 PDF

    k2996

    Abstract: K2996 equivalent k2996 transistor 2sk2996 2SK2996 equivalent transistor k2996 equivalent k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance z Low leakage current


    Original     		2SK2996 k2996 K2996 equivalent k2996 transistor 2sk2996 2SK2996 equivalent transistor k2996 equivalent k2996 PDF