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    TRANSISTOR K2917 Search Results

    TRANSISTOR K2917 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K2917 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    toshiba K2917

    Abstract: No abstract text available
    Text: 2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		2SK2917 toshiba K2917 PDF

    k2917

    Abstract: K2917 equivalent toshiba K2917 2SK2917 TOSHIBA DIODE transistor k2917
    Text: 2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		2SK2917 k2917 K2917 equivalent toshiba K2917 2SK2917 TOSHIBA DIODE transistor k2917 PDF

    k2917

    Abstract: toshiba K2917 K2917 equivalent transistor k2917 2-16F 2SK2917
    Text: 2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		2SK2917 k2917 toshiba K2917 K2917 equivalent transistor k2917 2-16F 2SK2917 PDF

    toshiba K2917

    Abstract: k2917 transistor k2917
    Text: 2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		2SK2917 toshiba K2917 k2917 transistor k2917 PDF

    K2917

    Abstract: toshiba K2917 transistor k2917 2SK2917 k29-1
    Text: 2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		2SK2917 K2917 toshiba K2917 transistor k2917 2SK2917 k29-1 PDF

    K2917

    Abstract: No abstract text available
    Text: 2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		2SK2917 K2917 PDF