Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR K2543 Search Results

    TRANSISTOR K2543 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K2543 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2543

    Abstract: transistor k2543 2SK2543
    Text: 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2543 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current


    Original     		PDF 2SK2543 K2543 transistor k2543 2SK2543

    transistor k2543

    Abstract: K2543 2SK2543
    Text: 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2543 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK2543 transistor k2543 K2543 2SK2543

    transistor k2543

    Abstract: K2543 2SK2543
    Text: 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2543 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current


    Original     		PDF 2SK2543 transistor k2543 K2543 2SK2543

    K2543

    Abstract: transistor k2543
    Text: 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2543 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK2543 K2543 transistor k2543

    K2543

    Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
    Text: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,


    Original     		PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417