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    TRANSISTOR K2382 Search Results

    TRANSISTOR K2382 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    K2382

    Abstract: transistor k2382 k2382 TRANSISTOR 2SK2382 K238
    Text: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		PDF 2SK2382 K2382 transistor k2382 k2382 TRANSISTOR 2SK2382 K238

    k2382

    Abstract: k2382 TRANSISTOR
    Text: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		PDF 2SK2382 k2382 k2382 TRANSISTOR

    k2382

    Abstract: transistor k2382 2SK2382 k2382 TRANSISTOR
    Text: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		PDF 2SK2382 k2382 transistor k2382 2SK2382 k2382 TRANSISTOR

    K2382

    Abstract: transistor k2382 k2382 TRANSISTOR 2SK2382
    Text: 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance : |Yfs| = 17 S (typ.)


    Original     		PDF 2SK2382 K2382 transistor k2382 k2382 TRANSISTOR 2SK2382

    transistor k2382

    Abstract: k2382 k2382 TRANSISTOR
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2382 DATA SILICON N CHANNEL MOS TYPE tt - M O S V (2SK2382) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		PDF 2SK2382 2SK2382) 100//A 2SK2382- --50V, 2SK2382 transistor k2382 k2382 k2382 TRANSISTOR