MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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CMBT5400
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT5400
C-120
CMBT5400
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transistor smd K2
Abstract: CMBT5400
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER
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ISO/TS16949
OT-23
CMBT5400
C-120
transistor smd K2
CMBT5400
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2SC5603
Abstract: 2SC5676
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor
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PA846TD
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
2SC5603
2SC5676
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ic 901
Abstract: 2SC5603 2SC5676 uPA846TC-T1
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor
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PA846TC
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
ic 901
2SC5603
2SC5676
uPA846TC-T1
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2SC5435
Abstract: 2SC5600 IC 14558 5mA25
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor
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PA841TD
2SC5435,
2SC5600)
S21e2
2SC5435
2SC5600
2SC5435
2SC5600
IC 14558
5mA25
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transistor smd marking k2
Abstract: transistor marking SA p sot-23 smd transistor k2 CMBT5400 transistor smd K2 MARKING SMD pnp TRANSISTOR ec
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS
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OT-23
CMBT5400
C-120
transistor smd marking k2
transistor marking SA p sot-23
smd transistor k2
CMBT5400
transistor smd K2
MARKING SMD pnp TRANSISTOR ec
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS
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OT-23
CMBT5400
C-120
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2SC5602
Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA
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2SC5602
S21e2
2SC5602-T1
2SC5602
2SC5602-T1
nec 8725
marking TW
NEC 2561
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2SC5435
Abstract: 2SC5437 NEC 2505 nj
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor
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PA836TD
2SC5435,
2SC5437)
S21e2
2SC5435
2SC5437
2SC5435
2SC5437
NEC 2505 nj
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transistor NEC 7812
Abstract: 2SC5668 2SC5676 FB 3306 NEC 7812 2SC567 nec japan 7812
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA848TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5668, 2SC5676) Q1: 21.0 GHz fT high-gain transistor, ideal for 3.6 to 4.2 GHz oscillation application
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PA848TD
2SC5668,
2SC5676)
S21e2
2SC5668
2SC5676
transistor NEC 7812
2SC5668
2SC5676
FB 3306
NEC 7812
2SC567
nec japan 7812
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07MS001
Abstract: transistor 7835 LPT16ED yig oscillator application note germanium transistors NPN bipolar transistor ghz s-parameter RF Bipolar Transistor 07AN001 10GHz bipolar transistor 50 ghz s-parameter
Text: LPT16ED 30 GHz SiGe Bipolar Transistor Production Information Applications Product Description Low phase noise oscillators up to 16 GHz The LPT16ED is a SiGe low phase noise, high frequency npn transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides
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LPT16ED
LPT16ED
16GHz.
May/01
07MS001
transistor 7835
yig oscillator application note
germanium transistors NPN
bipolar transistor ghz s-parameter
RF Bipolar Transistor
07AN001
10GHz
bipolar transistor 50 ghz s-parameter
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2SC5603
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
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PA893TD
S21e2
2SC5603)
2SC5603
PA893TD-T3
2SC5603
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nec a1640
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
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PA891TD
2SC5600)
2SC5600
PA891TD-T3
P15538EJ1V0DS
nec a1640
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2SC5600
Abstract: marking 603 npn transistor NEC 1093
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
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PA891TD
S21e2
2SC5600)
2SC5600
PA891TD-T3
2SC5600
marking 603 npn transistor
NEC 1093
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97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection
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CB-19
97CC
transistor ESM 16
transistor ESM 30
ESM18
transistor ESM 18
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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k2415
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K2415 is N-Channel MOS Field Effect Transistor designed in m illim eters for high voltage switching applications.
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2SK2415,
2SK2415-Z
K2415
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: CMBT5400 HIGH VOLTAGE TRANSISTOR P -N -P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 1.4 2.6 2.4 R0.1 c m _1.02 - 0.12 1 0.02 0.89"
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CMBT5400
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k72 transistor
Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Text: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.
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MPS-K20,
MPS-K21
MPS-K22
MPS-A20
MPS-K70,
MPS-K71
MPS-K72
MPS-A70
MPS-K20/MPS-K70
10VDC
k72 transistor
transistor k72
2N5143
k72 npn
TRANSISTOR C 2026
544S
K70 Package
TP6224
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Untitled
Abstract: No abstract text available
Text: CMBT5400 HIGH VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 I1 1 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.48 0.38 3 I I1 2.6 2.4 JL02 o.ar 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT5400
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