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    TRANSISTOR K12A Search Results

    TRANSISTOR K12A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K12A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K12A50D

    Abstract: K*A50D
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK12A50D K12A50D K*A50D

    Untitled

    Abstract: No abstract text available
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK12A53D

    Untitled

    Abstract: No abstract text available
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		PDF TK12A60U

    k12a60

    Abstract: K12A60U TK12A60U transistor K12A
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		PDF TK12A60U k12a60 K12A60U TK12A60U transistor K12A

    K12A50D

    Abstract: toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK12A50D K12A50D toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A

    Untitled

    Abstract: No abstract text available
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		PDF TK12A60U

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		PDF TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV

    K12A50D

    Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK12A50D K12A50D K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A

    K12A60U

    Abstract: K12A k12a60
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		PDF TK12A60U K12A60U K12A k12a60

    k12a60

    Abstract: K12A60U TK12A60U k12a6 K12A
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		PDF TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A

    K12A50D

    Abstract: K12a50 TK12A50D
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK12A50D K12A50D K12a50 TK12A50D

    k12a60

    Abstract: TK12A60U K12A60U
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		PDF TK12A60U k12a60 TK12A60U K12A60U

    K12A53D

    Abstract: No abstract text available
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK12A53D K12A53D

    K12A53D

    Abstract: TK12A53D
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK12A53D K12A53D TK12A53D

    K12A53D

    Abstract: TK12A53D
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK12A53D K12A53D TK12A53D

    k12a60

    Abstract: k12a60d
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK12A60D k12a60 k12a60d

    Untitled

    Abstract: No abstract text available
    Text: TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.43 High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original     		PDF TK12A45D

    Untitled

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 550 V)


    Original     		PDF TK12A55D

    K12A55D

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK12A55D K12A55D

    TK12A45D

    Abstract: K12A45D
    Text: TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original     		PDF TK12A45D TK12A45D K12A45D

    k12a60d

    Abstract: No abstract text available
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK12A60D k12a60d

    K12A60D

    Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A

    K12A60D

    Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data

    Untitled

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK12A55D