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    TRANSISTOR K12A Search Results

    TRANSISTOR K12A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K12A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K12A50D

    Abstract: K*A50D
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K*A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    k12a60

    Abstract: K12A60U TK12A60U transistor K12A
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U transistor K12A PDF

    K12A50D

    Abstract: toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D toshiba marking code transistor k12a50d TK12A50D K12a50 K12A50D* AR-500 K-12A PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV PDF

    K12A50D

    Abstract: K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K12a50 tk12a50 toshiba marking code transistor k12a50d TK12A50D K*A50D K12A TK-12A PDF

    K12A60U

    Abstract: K12A k12a60
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U K12A k12a60 PDF

    k12a60

    Abstract: K12A60U TK12A60U k12a6 K12A
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A PDF

    K12A50D

    Abstract: K12a50 TK12A50D
    Text: TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A50D K12A50D K12a50 TK12A50D PDF

    k12a60

    Abstract: TK12A60U K12A60U
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 TK12A60U K12A60U PDF

    K12A53D

    Abstract: No abstract text available
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D K12A53D PDF

    K12A53D

    Abstract: TK12A53D
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D K12A53D TK12A53D PDF

    K12A53D

    Abstract: TK12A53D
    Text: TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		TK12A53D K12A53D TK12A53D PDF

    k12a60

    Abstract: k12a60d
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60 k12a60d PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.43 High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original     		TK12A45D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 550 V)


    Original     		TK12A55D PDF

    K12A55D

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A55D K12A55D PDF

    TK12A45D

    Abstract: K12A45D
    Text: TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original     		TK12A45D TK12A45D K12A45D PDF

    k12a60d

    Abstract: No abstract text available
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60d PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK12A55D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK12A55D PDF