BUK95
Abstract: BUK9504-40A BUK9604-40A 03nd97 M3004
Text: D2 PA K BUK9604-40A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9604-40A
BUK95
BUK9504-40A
BUK9604-40A
03nd97
M3004
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK9604-40A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9604-40A
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TRANSISTOR CATALOGUE
Abstract: No abstract text available
Text: Product catalogue | Functional Electronics | Monitoring modules | Limit value monitoring | Transistor output General ordering data Order No. Part designation Version EAN Qty. 8260280000 MCZ SC 0-10V Limit value monitoring, 0.10 V , 1 , 2 , Tension clamp connection
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0-20MA
TRANSISTOR CATALOGUE
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Untitled
Abstract: No abstract text available
Text: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Dual Relay Board Kit (#27114) The Dual Relay Board can be used to turn lights, fans and other devices on/off while keeping them
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PLL16X
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WORKING PRINCIPLE IR SENSOR
Abstract: "BJT Transistors" IR phototransistor TRANSISTOR SUBSTITUTION BJT Transistors qrb1114 phototransistor as sensor parallax infrared sensor WORKING PRINCIPLE OF proximity sensor working principle of encoder
Text: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Errata for Process Control v1.0 (#122-28176) Chapter 4 Opto-Reflective Switch Use
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2SK1826
Abstract: No abstract text available
Text: TO SHIBA 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT
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2SK1826
961001EAA2
2SK1826
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1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
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2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
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TEA2262
Abstract: SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer
Text: ^7M Æ 7 S G S -T H O M S O N ß IL IO T M K i TEA 2262 SWITCH MODE POWER SUPPLY CONTROLLER POSITIVE AND NEGATIVE OUTPUT CUR RENT UP TO 1A LOW START-UP CURRENT DIRECT DRIVE OF THE MOS POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMI TATION DOUBLE PULSE SUPPRESSION
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TEA2262
TEA2262
SMPS Transformer Symbol
circuit diagram of high power smps
SMPS Transformer 12V
mos power 823
TEA5170
smps circuit diagrams
MASTER-SLAVE SMPS FOR TV
hf amplifier for transformer
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od300
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)
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2SC5289
SC-61
2SC5289-T1
od300
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 + 0.25 I 1.5-0.15 • • • • • 4V Gate Drive Low Threshold Voltage : High Speed
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2SK1826
O-236MOD
SC-59
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3SK151
Abstract: No abstract text available
Text: TOSHIBA 3SK151 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL D U A L GATE MOS TYPE 3 S K 1 51 Unit in mm TV TUNER VHF MIXER APPLICATIONS. VHF RF AMPLIFIER APPLICATIONS. + 0.2 2.9 - Û 3 • High Conversion Fain : GGS = 24.5dB Typ. • Low Noise Figure
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3SK151
T-500m
200MHz
245MHz
3SK151
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2sk1589
Abstract: transistor IR 324 C
Text: SEC DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1589 ELECTRON DEVICE N-CHANNEL MOS FET FOR SW ITCHING The 2SKT589, N-channe! vertical type MOS F E T , is a switching P A C K A G E D IM EN SIO N S Unit : mm 2.8 ± 0.2 _ device which can be driven directly by the output of ICs having a 5 V
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2SK1589
2SKT589,
IEI-1209)
IR30-00
VP15-00
WS60-00
2sk1589
transistor IR 324 C
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Untitled
Abstract: No abstract text available
Text: SONY CXP8 2 6 1 2 / 8 2 6 1 6 CMOS 8-bit Single Chip Microcomputer Description The CXP82612/82616 microcomputer is composed of a CPU, ROM, RAM, and I/O ports. These chips feature many other high-performance circuits in a single-chip CMOS design, including an A/D
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CXP82612/82616
32kHz
16-bit
CXP82612/82616
QFP080-P-1420-A
QFP-60P-L01
COPPER/42
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Untitled
Abstract: No abstract text available
Text: SONY CXP82612/82616 CMOS 8-bit Single Chip Microcomputer Description The CXP82612/82616 microcomputer is composed of a CPU, ROM, RAM, and I/O ports. These chips feature many other high-performance circuits in a single-chip CMOS design, including an A/D converter,
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CXP82612/82616
CXP82612/82616
32kHz
16-bit
QFP-80P-L01
OFP080-P-1420
42/COP
80PIN
QFP-80P-LQ1
QFP080-P-1420
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4ch car amp ic
Abstract: KIA8260AH 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM GV26d
Text: KEC KIA8260AH SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHN ICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT M A X P O W E R 40W Q U A D B T L A U D IO P O W E R A M P L IF IE R T h e K IA 8260A H is 4ch B T L audio p o w er am plifier for c a r audio application.
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KIA8260AH
KIA8260AH
4ch car amp ic
5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM
GV26d
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LN3063
Abstract: ln306 SO3A M-826 DSP56302 MC826 MC926 T53B
Text: M R T L MC900/800 series J-K F LIP - F L O P S M C 926 • M C 826 Available In T O -IO O M e tal Can, A d d " O " Suffix A vailable In TO -91 H at Package, A d d T S u ffix J K flip-flop with direct clear and direct set input* in addition to the clocked inputs.
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MC926
MC826
MC900/800
IN306J
AA0476
DSP56302
LN3063
ln306
SO3A
M-826
MC826
MC926
T53B
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TDM 5510
Abstract: zener diode v6 77 hall elements dc fan AN82 AN8267S motor dc fan 12v 3 PHASE MOTOR line wiring diagram
Text: Panasonic ICs for Motor AN8267S Fan Motor Driver • Overview U n it ! m m T he A N 8267S is an 1C to drive the brushless DC fan motors for internally cooling or blowing the air to the office automation equipments and measuring equipmen ts . ■ Features
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AN8267S
AN8267S
16-pin
016-P
b132aS2
TDM 5510
zener diode v6 77
hall elements dc fan
AN82
motor dc fan 12v
3 PHASE MOTOR line wiring diagram
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TRANSISTOR S16
Abstract: No abstract text available
Text: ,UJNY C X P 8 2 6 1 2/8 2 6 1 6 CMOS 8-bit Single Chip Microcomputer Description The CXP82612/82616 microcomputer is composed of a CPU, ROM, RAM, and I/O ports. These chips feature many other high-performance circuits in a single-chip CMOS design, including an A/D converter,
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CXP82612/82616
32kHz
16-bit
XP82612/82616
10MHz,
80PIN
42/COPPER
QFP-80P-L01
QFP080-P-1420
TRANSISTOR S16
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smd transistor xg
Abstract: smd transistor JE transistor bipolar 500ma transistor smd IY
Text: CS8128 5V Linear Controller/Driver Description The CS8128 contains all the necessary control circuitry to implement a 5V lin ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42
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CS8128
CS8128
TIP42
500mA,
350mV
500mA
MS-012
smd transistor xg
smd transistor JE
transistor bipolar 500ma
transistor smd IY
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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PDF
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CA3088E
Abstract: No abstract text available
Text: CA3088E PH H A R R IS U U S E M I C O N D U C T O R AM Receiver Subsystem and General-Purpose Amplifier Array November 1996 Features Description • Excellent Overload Characteristics The CA3088E, a monolithic integrated circuit, is an AM sub system that provides the converter, IF amplifier, detector,
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CA3088E
CA3088E,
CA3088E
CA3088E.
3088E
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BLW84
Abstract: DB333 GP 809 RF POWER TRANSISTOR NPN vhf transistor L6
Text: PHILIPS INTERNATIONAL b 5E D m 7 11 0 02 b 0D b333ñ 7 b l IPHIN BLW84 V.H.F. POW ER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and Coperated v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to with
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711002b
00b333Ã
BLW84
OT-123.
7Z77529
7Z77531
BLW84
DB333
GP 809
RF POWER TRANSISTOR NPN vhf
transistor L6
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transistor k 826
Abstract: TRANSISTOR marking code 432
Text: Central CJD41CNPN CJD42C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DPÀK1! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package
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CJD41CNPN
CJD42C
CJD41C,
26-September
transistor k 826
TRANSISTOR marking code 432
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BLW84
Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith
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bbS3S31
BLW84
59-j54
OT-123.
7Z77529
7Z77S30
BLW84
transistor tt 2222
C 829 transistor
TT 2222 npn
TT 2222
SOT123
C 828 Transistor
transistor L6
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