Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR K 820 Search Results

    TRANSISTOR K 820 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 820 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION RT3XBBM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=10 kΩ ●Mini package for easy mounting


    Original     		PDF JEITASC-88

    RT3X99M

    Abstract: No abstract text available
    Text: RT3X99M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION RT3X99M is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=2.2 KΩ ●Mini package for easy mounting


    Original     		PDF RT3X99M RT3X99M JEITASC-88

    Untitled

    Abstract: No abstract text available
    Text: RT3XAAM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm DESCRIPTION RT3XAAM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor R1=4.7 KΩ ●Mini package for easy mounting


    Original     		PDF JEITASC-88

    Untitled

    Abstract: No abstract text available
    Text: RT3XAAM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING RT3XAAM is a composite transistor with built-in bias resistor 1.25 ① ⑥ 0.65 2.1 ② ⑤ 0.65 DESCRIPTION ③ ④ FEATURE ●Built-in bias resistor R1=4.7 KΩ


    Original     		PDF JEITASC-88 25RTr1RTr2

    RT3X99M

    Abstract: No abstract text available
    Text: RT3X99M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING RT3X99M is a composite transistor with built-in bias resistor 1.25 ① ⑥ 0.65 2.1 ② ⑤ 0.65 DESCRIPTION ③ ④ FEATURE ●Built-in bias resistor R1=2.2 KΩ


    Original     		PDF RT3X99M RT3X99M JEITASC-88 25RTr1RTr2

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR „ FEATURES * VCEV = 80V * High Gain * 20 Amps pulse current 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free X1049AL-T92-B X1049AG-T92-B X1049AL-T92-K


    Original     		PDF X1049A X1049AL-T92-B X1049AG-T92-B X1049AL-T92-K X1049AG-T92-K X1049AL-T92-R X1049AG-T92-R QW-R201-061

    Untitled

    Abstract: No abstract text available
    Text: RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING RT3XBBM is a composite transistor with built-in bias resistor 1.25 ① ⑥ 0.65 2.1 ② ⑤ 0.65 DESCRIPTION ③ ④ FEATURE ●Built-in bias resistor R1=10 KΩ


    Original     		PDF JEITASC-88 25RTr1RTr2

    RT2N65M

    Abstract: No abstract text available
    Text: RT2N65M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm 2.1 DESCRIPTION ⑤ ① 0.2 1.25 RT2N65M is a composite transistor with built-in bias resistor ●Mini package for easy mounting 0.65 2.0 ●Built-in bias resistor R1=10 KΩ


    Original     		PDF RT2N65M RT2N65M 25RTr1RTr2

    RT2N63M

    Abstract: No abstract text available
    Text: RT2N63M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm 2.1 DESCRIPTION ① ⑤ 0.2 1.25 RT2N63M is a composite transistor with built-in bias resistor ●Mini package for easy mounting 0.65 2.0 ●Built-in bias resistor R1=4.7 KΩ


    Original     		PDF RT2N63M RT2N63M 25RTr1RTr2

    RT2N62M

    Abstract: No abstract text available
    Text: RT2N62M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm 2.1 DESCRIPTION ① ⑤ 0.2 1.25 RT2N62M is a composite transistor with built-in bias resistor ●Mini package for easy mounting 0.65 2.0 ●Built-in bias resistor R1=2.2 KΩ


    Original     		PDF RT2N62M RT2N62M 25RTr1RTr2

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		PDF MJE13009-K MJE13009-K QW-R223-007

    SM4 buzzer

    Abstract: transistor 1 E 9 k Transistor code iz ST108 buzzer smt
    Text: Composite Transistor Transistor Unit •P iezo electric Buzzer Driver R e s is ta n c e P a rt N o. RU101 Ri v a lu e r 2 k O (k n ) 10 180 VcES lc Pd (V ) (m A ) (m W ) 35 50 200 hpE M in . Typ. 150 330 M ax. 820 V CE lc (V ) (m A ) 3 50 •P ro d u c t Designation


    OCR Scan     		PDF RU101 RU901 SM4 buzzer transistor 1 E 9 k Transistor code iz ST108 buzzer smt

    transistor WT7

    Abstract: buzzer smt transistor RU101 RU101 buzzer piezoelectric circuit piezoelectric buzzer 3V buzzer 5V DC smt a1 transistor T146 T147
    Text: h 7 > v X $ / T ransistors RU101 h 7 RU101 > y ^ 5 t i - 7 h Transistor Unit Composite Transistor K:7< ^ /Piezoelectric Buzzer Driver • i'i-Jfi \ti£Hl/Dim ensions (Unit : mm) h 1) "7 V V X it r o t a $ 1 u -7 D. K 7 < ( S I ) <>H "J V u l(?)H M) I


    OCR Scan     		PDF RU101 SC-59 0Dllb13 10mA/0 V/10mA 100MHz transistor WT7 buzzer smt transistor RU101 RU101 buzzer piezoelectric circuit piezoelectric buzzer 3V buzzer 5V DC smt a1 transistor T146 T147

    transistor RU101

    Abstract: No abstract text available
    Text: Composite Transistors Transistor Unit •Piezoelectric Buzzer Driver Resistance value Part No. RU101 r2 R, k i l (k O ) 10 180 ^>FE VcES (V) (mA) Pd CmW) Min. 35 50 200 150 Typ. Max. Vce (V) lc (mA) 330 820 3 50 •Product Designation • When ordering, specify the type.


    OCR Scan     		PDF RU101 SC-59/Japanese OT-23) transistor RU101

    3722K

    Abstract: No abstract text available
    Text: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K


    OCR Scan     		PDF 2SC3722K 3722K 2SA1455K 2SA1455K. 2SC3722K Fig12 3722K

    MDC01

    Abstract: MFW14
    Text: h~7>y MDC01 £ /Transistors MDC01 ^ h 7 > v ^ ii7 K Multi Device (Composite Transistor Array) i — £ K 7 -4 ^ /M o t o r Driver * i^ffi\f>il3I/Dimensions (Unit : mm) *7 >J A iiHim Jl MFW14 pin n - j 'r - 'y i . z K 7 -f JŒ1& VcE (sat) W h 7 > V X 2 5 ,


    OCR Scan     		PDF MDC01 MFW14 MFW14 100MHz e--50pA 0A/50m -50mA MDC01

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


    OCR Scan     		PDF 2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473

    Untitled

    Abstract: No abstract text available
    Text: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF bbS3R31 Q02HS5U BCV64 BCV64B T-143 Q02USSb

    2sd1037

    Abstract: GDQS441 SC-59A T146 T147 2SA1037KLN 2SA1037
    Text: ROHM CO LTD h 7 > V X $ / I ransistors 40E » 2 S Â 1 0 3 7 K L N PNP Taeaw qqosmmq i birhm 2SA1037KLN - T-27- o J X - / K Frequency Low Noise Epitaxial Planar Super Mini-Mold PNP Silicon Transistor • • f t t D ffift* -? * * « 03/Dim ensions Unit : mm


    OCR Scan     		PDF 1037SCLH 2SA1037KLN -T-27-OJ SC-59A 31/MH Fig-10 00G5443 2SA1037KLN 2sd1037 GDQS441 SC-59A T146 T147 2SA1037

    T146

    Abstract: No abstract text available
    Text: Composite Transistors Transistor Unit •Piezoelectric Buzzer Driver Resistance value Part No. RU101 Ri k fl CkiO 10 180 R; hpE VcES (V) Ic Pd (mA) (m W ) Min. Typ. Max. VcE (V) (mA) 35 50 200 150 330 820 3 50 Ic • Product Designation • When ordering, specify the type.


    OCR Scan     		PDF RU101 T146

    Untitled

    Abstract: No abstract text available
    Text: r& T O K O TK70403 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Pagers ■ Internal PNP Transistor ■ Personal Communication Equipment ■ Internal Shutdown Control (Off Current, 0.1 max)


    OCR Scan     		PDF TK70403 OT-26) -216-TK70001

    MFW14

    Abstract: MDC01 hFE-200 transistor PNP
    Text: S ~7 > v 7. £ /Transistors M D C 0 1 w MDC01 '7;l' ^ V W * ^ h 7 > v X $ 7 K • Multi Device (Composite Transistor Array) ■î — £ K 7 < ^ / M o to r Driver ' ftH ^ & H /D iinensions (Unit : mm) 7 JU MFW14 pin v t r - 'J i Z \iy -f V c e (sat) W h- 7 > v X ?


    OCR Scan     		PDF MDC01 MFW14 MFW14 -500m -200m -100m -10m-20m -50m- MDC01 hFE-200 transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: 2SA1037KLN h ~ 7 > y X ^ / T ransistors 2 1 0 3 7 S A X K L N • • «HI 1 1 yi\/~f\s—J i& Z .—A*— $ —i —^ K PNP '>• ;=]> h - 7 > v * 2 ;Jt- £Hs:lti|iffl/L o w Frequency Low Noise Epitaxial Planar Super Mini-Mold PNP Silicon Transistor \|';£IS ]/'D im en sion s (U nit : mm)


    OCR Scan     		PDF 2SA1037KLN

    Untitled

    Abstract: No abstract text available
    Text: FMW3/FMW4 h ~7 > V 7s $ / I ransistors i —Jls K h ‘7 > v ^ i f/Dual Mini-Mold Transistor x t ! ? * ' > 7 J l s 7 l s - i - B N P N •>lJ a > Epitaxial Planar NPN Silicon Transistor — / General Small Signal Amp. FMW3 FMW4 • W f ^ ü S I /D im e n s io n s U n it: mm


    OCR Scan     		PDF