aec 7446 datasheet
Abstract: BUK7606-75B BUK75 aec 7446
Text: D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7606-75B
aec 7446 datasheet
BUK7606-75B
BUK75
aec 7446
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7606-75B
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HD6413003F16
Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
Text: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744
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ZM33064C
ZSD1000D8
TD300IN
TSH10IN
TSH11IN
TS271CN
TS274ID
TS902IN
TS912IN
TS3V393IN
HD6413003F16
hd6413002f16
HD6473042F16
TL084-LM324
piezo autotransformer
HD6413004F16
HD6413005F16
laptop inverter SCHEMATIC TRANSISTOR
6N138 SPICE
HD6413003F-16
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transistor buz 104
Abstract: No abstract text available
Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package
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O-220
C67078-S1353-A2
transistor buz 104
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BD329
Abstract: BD330 transistor BD329 transistor BD330 Transistors BD329 power transistor bd329 Power Transistor 1975 B0329 IC TRANSISTOR k 744
Text: BD329 J V s. SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P -N -F com plem ent is BD330. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A
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BD329
OT-32
BD330.
O-126
OT-32)
003434b
QQ34347
BD329
BD330
transistor BD329
transistor BD330
Transistors BD329
power transistor bd329
Power Transistor 1975
B0329 IC
TRANSISTOR k 744
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lt 744
Abstract: No abstract text available
Text: KSB744/744A PNP EXITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD794/KSD794A ABSOLUTE MAXIMUM ATINGS C h a ra c te ris tic Sym bol Collector-Base Voltage Collector-Emitter Voltage : KSB 744 : KSB 744A Emitter-Base Voltage
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KSB744/744A
KSD794/KSD794A
lt 744
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MCA443
Abstract: 70cN
Text: N AMER bTE D PHILIPS/DISCRETE • bbS 3ci31 D02ôûbE 744 I BLU60/28 UHF POWER TRANSISTOR NPN silico n planar e p ita xia l tran sisto r p rim a rily intended fo r use in radio tran sm itte rs in th e 470 MHz co m m u n ica tio n s band. Features • M ulti-base stru ctu re and e m itte r ballasting resistors fo r an o p tim u m tem perature p ro file
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bbS3R31
BLU60/28
BLU60/28
OT119)
MCA443
70cN
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1445s
Abstract: transistor D 1761 PH1617
Text: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point
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PH1617-10
1445s
transistor D 1761
PH1617
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DM7445J
Abstract: DM74145J 54/74 TTL series DM54145W DM54145J DM5445J DM74145N DM7445N dm54145
Text: D M 5 4 4 5 / D M 7 4 4 5, D M 5 4 1 4 5 / D M 7 4 1 4 5 Display Drivers L\1S D M 5445/D M 7445 DM 5414 5 /D M 7 4 1 4 5 B C D - t o - d e c im a l d ec o d e r/d riv e rs g en eral d escrip tion The DM 5442/DM 7442 and DM 54145/DM 74145 BCD-to-decimal decoder/drivers are fu lly compati
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DM5445/DM7445
5/DM7414
DM5442/DM7442
DM54145/DM74145
DM5445/DM7445
DM54145/DM74145
100S2
DM5445,
DM54145
DM7445
DM7445J
DM74145J
54/74 TTL series
DM54145W
DM54145J
DM5445J
DM74145N
DM7445N
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TRANSISTOR SUBSTITUTION
Abstract: ED42 Scans-008492 Mextram
Text: Efficient Param eter Extraction for the M EX TR A M M odel W .J. Kloosterman, J.A.M. Geelen and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 744093, email: kloosteb@prl.philips.nl A b stract
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors 0030155 flO fl UHF push-pull power MOS transistor B i APX Product specification BLF546 N ANER PHILIPS/DISCRETE bRE » PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF546
OT268
00301b2
00301b3
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Untitled
Abstract: No abstract text available
Text: bbSBRBl D O E n Q l 101 • APX Philips Sem iconductors Prelim inary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b^E » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF221B
bb53T31
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Untitled
Abstract: No abstract text available
Text: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •
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TIP29,
TIP29A,
TIP29B,
TIP29C,
TIP29D,
TIP29E,
TIP29F
TIP30
T0-220AB
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j78 transistor equivalent
Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LLE16045X
OT437A.
j78 transistor equivalent
Transistor Equivalent list
j160 capacitor philips
transistor BD239 equivalent
bd239 equivalent
J6 transistor
BD239
BY239
LLE16045X
SC15
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BA570
Abstract: agc diode 734
Text: Philips S e m ic o n d u c to rs Data sheet status Objective specification date of issue June 1991 TEA1065 Versatile telephone transmission circuit with dialler interface FEATURES • C urrent and voltage regulator m ode w ith adjustable static • Receiving am plifier for magnetic,
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TEA1065
TheTEA1065
theTEA1065,
BA570
agc diode 734
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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Philips film capacitors 27 pf
Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized
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BLW60C
00b35b2
7Z772S6
7Z77255
Philips film capacitors 27 pf
trimmer 3-30 pf
TL 2222
BLW60C
Philips film capacitors polystyrene
b32s
philips carbon film resistor
z670
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MAX730ACPA
Abstract: No abstract text available
Text: 19-0165; Rev2; 1/96 A M X IA I 5V, S t e p - D o w n , C u r r e n t - M o d e PWM DC-DC C o n v e r t e r s _ F e a t u r e s The M A X 730A /M A X 738A /M A X 744A are 5V -outpu t CMOS, step-down switching regulators. The MAX738A/
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750mA
MAX738A/MAX744A)
159kHz
MAX744A)
MAX730A)
MAX738A/
MAX744A
16-PIN
MAX730ACPA
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transistor tt 2222
Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Text: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF221B
7110fl5b
0DM37Mel
004375b
transistor tt 2222
TT 2222
os TT 2222
LM 2222
transistor tt 2222 vertical
BLf221
2222-581
BH RV transistor
BLF221B
OP03
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ir 847p
Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
Text: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)
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74LS247
Abstract: PIN DIAGRAM 74LS247 TTL 7448 9368 compatibili pin diagram of 74LS247 PIN DIAGRAM 74LS248 TTL 7446 74LS248 7-seg TTL 74154
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL - T T L D138 9311, 93L11, 54/74154 D139 9319, 9320 Vcc = Pin 24 GND = Pin 12 Vcc = Pin 16 GND = Pin 8 D141 9307, 54/7448, 54LS/74LS48, 54LS/74LS248 54LS/74LS249 D140 9315 54/7441, 74141 7 1 2 6 3 5 TTTTTTTTTT 16 15
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93L11,
O10O11O12O13
O14O15
54LS/74LS48,
54LS/74LS248
54LS/74LS249
54LS/74LS49
9317B,
9317C,
54LS/74
74LS247
PIN DIAGRAM 74LS247
TTL 7448
9368 compatibili
pin diagram of 74LS247
PIN DIAGRAM 74LS248
TTL 7446
74LS248
7-seg
TTL 74154
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization
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BLF221B
7110fl5b
paM37Sti
MRA910
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Untitled
Abstract: No abstract text available
Text: HIP5060 < X Ì HARRIS S E M I C O N D U C T O R Power Control 1C Single Chip Power Supply Features Description • Single Chip Current Mode Control 1C The HIP5060 is a complete power control IC, incorporating both the high power DMOS transistor, CMOS logic and low level analog circuitry on the
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HIP5060
HIP5060
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