transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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j1n transistor
Abstract: BTP 30 diode B199 BTP DIODE TRANSISTOR 3FT 81
Text: 1DI5OH-O55 50a /< 7 - / \ 7 — )\ s POWER TRANSISTOR MODULE ^Features • ¡SiiJŒ High Voltage • V ' s W f â —Kl*3/K • A S O A 'T k v ,' Including Free W heeling Diode Excellent Safe Operating Area Insulated Type l.fflJÊ - Applications Chopper Controls
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1DI5OH-O55
0000C300000
j1n transistor
BTP 30 diode
B199
BTP DIODE
TRANSISTOR 3FT 81
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IAEJE
Abstract: 6di30z
Text: 6DI30Z-120 30A / <7 - & D . — JU outi ine Drawings • POWER TRANSISTOR MODULE H _ 14 «Q 1 4 .4 4 . -, y : F e a tu re s • ?Ü i/± • 7')- O J j •üIeü High Voltage yy 4 * - sjw u > • A S O A 'lix L ' k % M k, i k iK J ■ «jt Including Free W heeling Diode
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6DI30Z-120
11S19^
I95t/R89)
IAEJE
6di30z
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TRANSISTOR BJ 033
Abstract: 2SB1068 JAN 5751 m5ss
Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm
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2SB1068
o2SD15131
PWS10
TRANSISTOR BJ 033
2SB1068
JAN 5751
m5ss
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KJL5164K-F1
Abstract: NJL5162K NJL5162K-F3 NJLS162K-F2 automatic light using 68K
Text: NJL5162K 64K 66K B8K PHOTO REFLECTOR • GENERAL DESCRIPTION The N JL 5 1 6 2 K /5 1 6 4 K /5 1 6 6 K /5 I6 8 K . are su p er m in iatu re a n d super thin p h o to reflector; w hich consist o f h ig h o u tp u t infrared em itting a n d high sensitve Si p h o to d ralin g to n transistor.
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NJL5162K/64K/66K/68K
NJL5162K/5164K/5166K/5I68K
KJL5164K-F1
NJL5162K
NJL5162K-F3
NJLS162K-F2
automatic light using 68K
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DIODE B36
Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —
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ETN85-O5O
E82988
19S24^
095t/R89
DIODE B36
ml25
M104
T151
Transistor B36
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M104
Abstract: T151 X390
Text: ETN85-O5O 300a 3 . — : Outline Drawings ) V POWER TRANSISTOR MODULE : Featurés • 7 'J — 'J K f*3/K • ASO Including Free Wheeling Diode Excellent Safe Operating Area •mm Insulated Type • ff liÊ ! A p p lic a tio n s v T 's ? • • AC High Power Switching
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ETN85-O5O
E82988
19S24#
Cl95t/R89)
M104
T151
X390
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150eu
Abstract: No abstract text available
Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s "jT • High Power Switching • AC ^ —
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ETN85-O5O
12Sl-t
095t/R89
150eu
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marking L64
Abstract: No abstract text available
Text: SILICON TRANSISTOR FAI F4Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • Resistor Built-in TYPE B O -A W R i = 2 2 k i2 • Complementary to FN1F4Z ABSOLUTE M A XIM U M RATINGS Maximum Voltages and Currents Ta - 2 5
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2DI5OZ-12O
Abstract: B381 IB07
Text: 2DI5OZ-12O 50A l— ; u POWER TRANSISTOR MODULE : Features > K 9 ftE H ig h V o lt a g e * 7 >; — U — KF*3/K Including Free W heeling Diode * A S O * s'/ a ^ v Excellent Safe Operating Area Insulated Type I Applications • Jz'K 'tJX 'f "jJ- 's y High Power Switching
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2DI5OZ-12O
E82988
l95t/R89
Shl50
B381
IB07
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06a60
Abstract: No abstract text available
Text: 6DI3OZ-12O 30a 'Ê ± ^ < r7 - ^ i > 3 . - ) U W r r t i i k : Outli ne Drawings POWER TRANSISTOR MODULE Features • jâ ü i/± High Voltage • 7 'J —Jj î' fl) K r t J R • A S O fr '/ S i' •mmm r. Including Free W heeling Diode i Excellent Safe Operating Area
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6DI3OZ-12O
E82988
I95t/R89)
06a60
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Untitled
Abstract: No abstract text available
Text: ETG81-O5OA 30a POWER TRANSISTOR MODULE Features • 7 y —i f r 'i x) • hFE^'iftv»' • ÎfeflfcJfê K rtffll Including Free W heeling Diode High DC Current Gain Insulated Type • f f liÊ ’ A pplications i 'k M t iT s 'i Power Sw itching • AC t — 9 W M
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ETG81-O5OA
I95t/R89
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JE 800 transistor
Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )
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uPA76HA
JE 800 transistor
upa76
PA76HA
KJE transistor
pa76h
JE 33
KJE 17 transistor
B0188
361-s
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CM603
Abstract: No abstract text available
Text: 6DI3OA-O5O 30a Ä ± / < 7 — Ì V ; Outline Drawings , < n - \ = 7 > V 'T s ^ i> z l - ; u POWER TRANSISTOR MODULE (10), H.& j I9.5~ . H .5 . 1|,& . (1p}| F e a tu re s • 7 '} — X ' f <J ' s '? $ 4 + — K r t/K • liF E ^ 'iS i.' • S6i&Jfi In c lu d in g 'F re e W h e e lin g D iode
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2SA1396
Abstract: 2SC3568 T108 TS33
Text: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS
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2SA1396
2SA1396
2SC3568
fifO988
2SC3568
T108
TS33
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IC M605
Abstract: diode B410 M605 6DI15A-120 30S3 T810 Transistor AC 125
Text: 6DI15A-12005A g ± / < 7 — )V I Outline Drawings POWER TRANSISTOR MODULE : Features • ffiflötEE High Voltage • 7 ij- * 4 •; K rt* Including Free Wheeling Diode ■ Insulated Type — Ty ^-^ Ç ■ 7t7.\'s9? *»250/ '■7T*.h'sf7 'H NttllD allOX 11- " T -—
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6DI15A-12005A)
E82988
11ffit
I95t/R89)
Shl50
IC M605
diode B410
M605
6DI15A-120
30S3
T810
Transistor AC 125
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b342 transistor
Abstract: 25t125 TRANSISTOR BO 344 B344 B341 1B2 zener diode B-343 B343 TG-400 B342
Text: 1 D I 3 0 0 M P - 1 2 0 3 0 0 A / N °7 “ •Outline Drawings h POWER TRANSISTOR MODULE : Features • High DC Current Gain • K r tlE • ffittflMftttERTflE ■ffljSs : Applications • General Purpose Inverter > '< — 9 • ( Uninterruptible Power Supply
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1DI300MP-120Ã
l95t/R89
b342 transistor
25t125
TRANSISTOR BO 344
B344
B341
1B2 zener diode
B-343
B343
TG-400
B342
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zener diode B340
Abstract: Transistor b340 b337 b338 JV13 feme 1DI300MN-120 600ADC
Text: 1DI300MN-120 300A y < rJ — y =7 : Outline Drawings }U POWER TRANSISTOR MODULE : Features • hFE^'fSi' High DC Current Gain • - K rt* • *S!lSfaffli*liE*rifc : Applications 9 • General Purpose Inverter • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools
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1DI300MN-120
E82988
11S1W
l95t/R89
zener diode B340
Transistor b340
b337
b338
JV13
feme
600ADC
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1DI300ZN-1
Abstract: JE711 JE71 B348 zener ci 5t
Text: 1DI300ZN-120 300A ✓ < 7 - : Outline Drawings 7 h POWER TRANSISTOR MODULE : Features • hpE^'fiH-' High DC Current Gain • f * - K rt* • a e ^ O T ia ^ t - t : Applications • i/ L ffl'f V’-'i— 9 General Purpose Inverter • Uninterruptible Power Supply
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1DI300ZN-120
E82988
Recommen85
1DI300ZN-1
JE711
JE71
B348
zener ci 5t
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transistor f151
Abstract: No abstract text available
Text: 6DI15A-05005A / < T7 — ' Ì k ± s \ r7 — ;E ' > i L — J l' : Outline Drawings =l — ) V POWER TRANSISTOR MODULE 17 7.6 T 7 7I 7I7 JA B 3.E A 3.E |3& [3.Ç • iN N i: : F e a tu re s • y U — i ï ' f 'J + — K rtJ E In c lu d in g Free W h e e lin g D iode
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6DI15A-05005A)
E82988
l95t/R89
Shl50
transistor f151
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ETL81-050
Abstract: SMT M4 diode M103 T151
Text: ETL81-050000A : Outline Drawings )V s < r7 - POWER TRANSISTOR MODULE Features • 7 1 ; —ip. 4 1; 's * f $ 4 • ASO — K r t/ tt Including Free W heeling Diode Excellent Safe Operating Area • Insulated Type : Applications • 7. <i "j T V ? Power S w itching
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ETL81-050
E82988
I95t/R89
Shl50
SMT M4 diode
M103
T151
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b72 zener
Abstract: ZENER MIO N41I 30S3 M115 T151
Text: 1DI400MN-050 400A e±,(„ 5l-, '•Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • hFE^'^V' High DC Current Gain • K rtJ •zm nm m t \ : Applications >'<— 9 • d General Purpose Inverter • Uninterruptible Power Supply • N C If P i& M
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DI400MIM-050
E82988
l95t/R89
Shl50
b72 zener
ZENER MIO
N41I
30S3
M115
T151
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A31L
Abstract: No abstract text available
Text: D 1 I O 2 O Z - 1 C 2 N 2 A : Outline Drawings POWER TRANSISTOR MODULE • 4t;Bb : Features • SffiME • 7 High Voltage y -¡m g K rt* • ASO A'TSv.' •mm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : Applications •
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5388-76B5
l95t/R89
A31L
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1d1200z
Abstract: transistor eft 323 FCLA M115 T151 1d1200 characteristics of zener diode TRANSISTOR WM 9
Text: 1 D 1 '< 7 - 2 Z N - 1 2 2 A : Outline Drawings l ' 7 / ' ÿ 7 Î ï ÿ i - ; i ' POWER TRANSISTOR MODULE : Features • h F E ^ i^ i' High DC Current Gain • K rt» : Applications • General Purpose Inyerter > '< — 9 • Uninterruptible Power Supply
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1D1200Z
l95t/R89
transistor eft 323
FCLA
M115
T151
1d1200
characteristics of zener diode
TRANSISTOR WM 9
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