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    TRANSISTOR K 2333 Search Results

    TRANSISTOR K 2333 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 2333 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTA143XE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


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    PDF M3D173 PDTA143XE MAM345 SC-75 OT416) SCA63 115002/00/01/pp8 PDTA143XE SC-75

    PDTC143XE

    Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


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    PDF M3D173 PDTC143XE MAM346 SC-75; OT416) 115002/00/02/pp8 PDTC143XE PDTA143XE SC-75 PDTA143 PDTA143X

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


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    PDF M3D173 PDTC124XE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


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    PDF M3D173 PDTA124XE MAM345 SC-75) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75

    PDTC114YE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ


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    PDF M3D173 PDTC114YE 115002/00/03/pp8 PDTC114YE SC-75

    BP317

    Abstract: MMBTA42 MMBTA92 254-D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN


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    PDF M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 BP317 MMBTA42 MMBTA92 254-D

    MMBTA92

    Abstract: BP317 MMBTA42
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN


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    PDF M3D088 MMBTA92 MMBTA42. MAM256 603506/01/pp8 MMBTA92 BP317 MMBTA42

    PDTC123ET

    Abstract: marking code 10 sot23 PDTA123JT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ


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    PDF M3D088 PDTA123JT MAM100 115002/01/pp8 PDTC123ET marking code 10 sot23 PDTA123JT

    BP317

    Abstract: MMBT2222A PMBT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).


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    PDF M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A

    MMBT3906 PHILIPS

    Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


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    PDF M3D088 MMBT3906 MMBT3904. MAM256 603506/01/pp8 MMBT3906 PHILIPS transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906

    marking code 10 sot23

    Abstract: BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


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    PDF M3D088 MMBT3904 MMBT3906. MAM255 603506/01/pp8 marking code 10 sot23 BP317 MMBT3904 MMBT3906

    PDTA124EEF

    Abstract: SC-89 BP317 PDTA124E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each


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    PDF M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E

    BP317

    Abstract: PMBT5401 PMBT5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA


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    PDF M3D088 PMBT5401 PMBT5550. MAM256 SCA63 115002/00/03/pp8 BP317 PMBT5401 PMBT5550

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).


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    PDF M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8

    PDTC114EE

    Abstract: PDTA114EE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each


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    PDF M3D173 PDTC114EE 115002/00/04/pp8 PDTC114EE PDTA114EE SC-75

    PDTA123JE

    Abstract: PDTC123JE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ


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    PDF M3D173 PDTC123JE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA123JE PDTC123JE SC-75

    PDTC143XE

    Abstract: Transistor B 886 PDTA143 PDTA143XE PDTA143X
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143XE NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 10 k£2


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    PDF PDTC143XE SC-75 OT416) PDTA143XE. 115002/00/02/pp8 PDTC143XE Transistor B 886 PDTA143 PDTA143XE PDTA143X

    MARKING CODE ht9

    Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
    Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2


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    PDF SCA64 15002/00/01/pp8 MARKING CODE ht9 MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking

    PDTA124XE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 25 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTA124XE PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 22 k£2 and 47 k£2


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    PDF PDTA124XE SC-75 OT416) PDTC124XE. 115002/00/03/pp8 PDTA124XE

    PDTA143Z

    Abstract: PDTC143Z PDTA143
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143ZT NPN resistor-equipped transistor FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 47 k£2


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    PDF PDTC143ZT 115002/00/03/pp8 PDTA143Z PDTC143Z PDTA143

    2SC2333

    Abstract: No abstract text available
    Text: NPN SILICON POWER TRANSISTOR 2SC2333 D ESC R IPTIO N The 2SC2333 is NPN silicon triple diffused transistor designed for switching regulator, DC-DC converter and ultrasonic appliance ap­ PA C K A G E D IM EN SIO N S in millimeters inches plications. FEATURES


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    PDF 2SC2333 2SC2333 400CTOR

    transistor D 288

    Abstract: transistor 614 CSA614 CSD288
    Text: CSA614, CSD288 CSA614 CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.88 3.75 2,29 2.79 2.54 3.43 0,56 12,70 14.73 6.35


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    PDF CSA614, CSD288 CSA614 CSD288 23B33T4 0DQ1114 transistor D 288 transistor 614

    AN 6752

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 15 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES • Built-in bias resistor R1 typ. 10 k£2


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    PDF PDTA114TU OT323) OT323 PDTC114TU. 115002/00/03/pp8 AN 6752

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT PINNING FEATURES • Built-in bias resistor R1 typ. 4.7 k£2


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    PDF PDTC143TT 115002/00/02/pp8