TRANSISTOR K 208 Search Results

TRANSISTOR K 208 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR K 208 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor h9 Abstract: PIMH9 Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMH9 NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Product specification 2001 Sep 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ	Original	M3D302 SCA73 613514/01/pp8 transistor h9 PIMH9	PDF
BP317 Abstract: MMBTA42 MMBTA92 254-D Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN	Original	M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 BP317 MMBTA42 MMBTA92 254-D	PDF
MMBTA92 Abstract: BP317 MMBTA42 Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN	Original	M3D088 MMBTA92 MMBTA42. MAM256 603506/01/pp8 MMBTA92 BP317 MMBTA42	PDF
BP317 Abstract: MMBT2222A PMBT2907A Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).	Original	M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A	PDF
MMBT3906 PHILIPS Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906 Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).	Original	M3D088 MMBT3906 MMBT3904. MAM256 603506/01/pp8 MMBT3906 PHILIPS transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906	PDF
marking code 10 sot23 Abstract: BP317 MMBT3904 MMBT3906 Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).	Original	M3D088 MMBT3904 MMBT3906. MAM255 603506/01/pp8 marking code 10 sot23 BP317 MMBT3904 MMBT3906	PDF
PDTA124EEF Abstract: SC-89 BP317 PDTA124E Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each	Original	M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).	Original	M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8	PDF
TO-92 CASE MPSA06 Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06 Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70	Original	MPSA06 TO-92 CASE MPSA06 F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06	PDF
7333 A Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333 Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70	Original	MPSA06 7333 A transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333	PDF
bf199 equivalent Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40	Original	BF199 bf199 equivalent BF199 transistor NPN BF199 bf199 transistor BF199 RF	PDF
bf199 equivalent Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199 Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40	Original	BF199 bf199 equivalent bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199	PDF
Untitled Abstract: No abstract text available Text: DDC xxxx K NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR SPICE MODELS: DDC124EK DDC144EK DDC114YK DDC123JK DDC114EK DDC143TK DDC114TK • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDA) Built-In Biasing Resistors	Original	OT-26 DDC124EK DDC144EK DDC114YK DDC123JK DDC114EK DDC143TK DDC114TK OT-26, J-STD-020A	PDF
DDA124EK Abstract: DDA114EK DDA114TK DDA114YK DDA123JK DDA143TK DDA144EK J-STD-020A Text: SPICE MODEL: DDA124EK DDA144EK DDA114YK DDA123JK DDA143TK DDA114TK DDA xxxx K PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • · · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDC) Built-In Biasing Resistors	Original	DDA124EK DDA144EK DDA114YK DDA123JK DDA143TK DDA114TK OT-26 DS30349 DDA114EK DDA114TK J-STD-020A	PDF

DDC114EK Abstract: DDC114TK DDC114YK DDC123JK DDC124EK DDC143TK DDC144EK J-STD-020A Text: DDC xxxx K NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR SPICE MODELS: DDC124EK DDC144EK DDC114YK DDC123JK DDC114EK DDC143TK DDC114TK • · · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDA) Built-In Biasing Resistors	Original	OT-26 DDC124EK DDC144EK DDC114YK DDC123JK DDC114EK DDC143TK DDC114TK DDC124EK DDC144EK DDC114TK J-STD-020A	PDF
DCX (xxxx) K Abstract: DCX124EK Text: DCX xxxx K DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR Features • • • • Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Available in Lead Free/RoHS Compliant Version (Note 1) “Green” Device (Note 2) Part Number DCX124EK	Original	DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK SC-74R J-STD-020D DCX (xxxx) K DCX124EK	PDF
DCX114EK Abstract: DCX114TK DCX114YK DCX115EK DCX123JK DCX124EK DCX143TK DCX144EK DCX (xxxx) K Text: DCX xxxx K DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR Please click here to visit our online spice models database. Features • • • • Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Available in Lead Free/RoHS Compliant Version (Note 1)	Original	DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK SC-74R J-STD-020D DCX114EK DCX114TK DCX114YK DCX115EK DCX123JK DCX124EK DCX143TK DCX144EK DCX (xxxx) K	PDF
transistor 2sk Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796 Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k	OCR Scan	2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796	PDF
kd721K Abstract: No abstract text available Text: 7294621 POWE RE X INC ' m Tfl I>F\| 7ET4LS1 DODSabl 4 N E R E K KD721KA2 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual Darlington Transistor Module 25 Amperes/1000 Volts Description Powerex Dual Darlington Transistor Modules are designed for use in	OCR Scan	KD721KA2 Amperes/1000 kd721K	PDF
BUK456-50A Abstract: BUK456 N25Y 15 1E41 BUK456-50B T0220AB Text: N AMER P H I L I P S / D I S C R E T E 25E D • k b S 3 c131 002ÜSE0 5 ■ BUK456-50A BUK456-50B PowerMOS transistor T - 3 T - 13 GENERAL DESCRIPTION N-channel enhancement mode field-etfect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK456-50A BUK456-50B BUK456 N25Y 15 1E41 T0220AB	PDF
K6N sot363 marking Abstract: 1P NPN MMDT3904 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527 Text: PRELIM INARY MMDT3904 VISHAY DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 R Ei R k Mechanical Data_	OCR Scan	MMDT3904 OT-363, MIL-STD-202, OT-363 MMDT3904 100MHz 100nA, 300tis, DS30088 K6N sot363 marking 1P NPN 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527	PDF
BUK456-50A Abstract: drain BUK456 BUK456-50B T0220AB Text: E5 E N AMER PHILIPS/DISCRETE ^£3=131 D 0Q20S20 S B U K 456-50A B U K 456-50B P o w erM O S tra n s isto r G E N E R A L D ESCR IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	002GSE0 BUK456-50A BUK456-50B BUK456 BUK456-50A drain BUK456-50B T0220AB	PDF
Untitled Abstract: No abstract text available Text: AVANTEK INC aoE j> m i m m ^A V A N T E K GQ0b4Sb 1 AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor Avantek TO-72 Package Features • 24.0 d Bm typical Pi dB at 1.0 GHz • 5.5 d B typical G k ib at 1.0 GHz • High Gafn-Bandwidth Product: 5.5 G H z typical fr	OCR Scan	AT-01672	PDF
MPSA06 Abstract: MPSA05 transistor MPSA06 vishay MPSA05 TO-92 CASE MPSA06 mpsa06 200 MPSA06 transistor Text: MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages K M h M TO-92 Dim Min Max Mechanical Data_ A 4.32 4.83 B 4.32 4.78 Case: TO-92, Plastic	OCR Scan	MPSA05 MPSA06 MIL-STD-202, MPSA06 100nA, transistor MPSA06 vishay MPSA05 TO-92 CASE MPSA06 mpsa06 200 MPSA06 transistor	PDF

Privacy Settings

TRANSISTOR K 208 Search Results

TRANSISTOR K 208 Result Highlights (5)

TRANSISTOR K 208 Datasheets Context Search

transistor h9

BP317

MMBTA92

BP317

MMBT3906 PHILIPS

marking code 10 sot23

PDTA124EEF

Untitled

TO-92 CASE MPSA06

7333 A

bf199 equivalent

bf199 equivalent

Untitled

DDA124EK

DDC114EK

DCX (xxxx) K

DCX114EK

transistor 2sk

kd721K

BUK456-50A

K6N sot363 marking

BUK456-50A

Untitled

MPSA06