TRANSISTOR K 117 Search Results

TRANSISTOR K 117 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR K 117 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HEMT 36 ghz transistor Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with	Original	EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor	PDF
2SK3718 Abstract: SC-89 marking AE transistor 45 f 122 Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3718 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3718 is suitable for converter of ECM. +0.1 0.3 ±0.05 NV = −117 dB TYP. (VDS = 4.5 V, C = 10 pF, RL = 1.0 kΩ)	Original	2SK3718 2SK3718 SC-89 SC-89 marking AE transistor 45 f 122	PDF
T2 MARKING SOT23-6 Abstract: marking ma sot23-6 PNP POWER TRANSISTOR SOT23 Text: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in	Original	OT23-6 -70mV A/100mA T2 MARKING SOT23-6 marking ma sot23-6 PNP POWER TRANSISTOR SOT23	PDF
Untitled Abstract: No abstract text available Text: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in	Original	OT23-6 -70mV A/100mA W24250	PDF
KTC3620S Abstract: No abstract text available Text: SEMICONDUCTOR KTC3620S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. E B L L FEATURES DIM A B C D E G H J K L M N P Q ・High Gain. D ・Low Noise Figure. 3 G H A 2 1 Q J K MAXIMUM RATING Ta=25℃ CHARACTERISTIC P	Original	KTC3620S KTC3620S	PDF
transistor 2sk Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796 Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k	OCR Scan	2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796	PDF
transistor NEC D 822 P Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2 Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters	OCR Scan	2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P	PDF
OXF9 Abstract: No abstract text available Text: TLX HEW LETT WSEm P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:	OCR Scan	AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23, OXF*9	PDF
transistor RU101 Abstract: No abstract text available Text: RU101 h "7 > v 7s £ /Transistors RU101 h 7 > y X $ 2 i 7 h & t f C i* i m b J7 > 5 ' Z 2 Transistor Unit (Composite Transistor) £±117+f— K 7 < 7 /Piezoelectric Buzzer Driver ' • «ft JFi'i i£El/D im ensions (Unit : mm) h V > D i K ^ ' r ^ ' i i i S f f l c A 'r T 7	OCR Scan	RU101 transistor RU101	PDF
Untitled Abstract: No abstract text available Text: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz	OCR Scan	AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 5963-1862E 5965-1401E	PDF
Untitled Abstract: No abstract text available Text: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:	OCR Scan	AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23,	PDF
220v 2a transistor Abstract: smps 1500W 250V transistor npn 2a SGSF665 transistor npn 100khz collector voltage 5v transistor npn high speed switching Text: f Z 7 S 5 ^7# C S - T H O M [ L t K S g T M O N K S S G S F 6 6 5 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR • H IG H S W IT C H IN G 'S P E E D N P N P O W E R TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 50kHz SW ITCHING SPEED	OCR Scan	SGSF665 50kHz GC-09Ã 220v 2a transistor smps 1500W 250V transistor npn 2a SGSF665 transistor npn 100khz collector voltage 5v transistor npn high speed switching	PDF
TRANSISTOR BJ 033 Abstract: 2SB1068 JAN 5751 m5ss Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm	OCR Scan	2SB1068 o2SD15131 PWS10 TRANSISTOR BJ 033 2SB1068 JAN 5751 m5ss	PDF
PN4356 Abstract: PN4355 PN4354 Text: Datasheet PN4354 PN4355 PN4356 Central K ilH l • Semiconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors	OCR Scan	PN4354 PN4355 PN4356 PN4354 PN4356 100/iA 100mA	PDF

1.4464 Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473 Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S	OCR Scan	2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473	PDF
3004x Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for	OCR Scan	fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M	PDF
PN3639 Abstract: PN3640 Text: 'iM F H i M ìì Central PN3639 PN36*K Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors PNP SILICON TRANSISTOR JEDEC TO-92 CASE (EBC) DESCRIPTION	OCR Scan	PN3639 PN3639, PN3640 PN3639 PN361Â PN36A0	PDF
2n3442 Abstract: No abstract text available Text: L 2N3442 2N3442 NPN POWER TRANSISTOR General Purpose Amplifier and Switching Applications s 2 2 0 —I k - LU CE < CO 2 O in z tu 2 Q DIM A B C D E F G H J K L M MIN - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter	OCR Scan	2N3442 2N3442	PDF
LA 5530 Abstract: c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD P A C K A G E D R A W IN G S (Unit: m m ) FEA TU R E S • Low noise and high gain	OCR Scan	uPA826TF 2SC4959) PA826TF PA826TF59 jPA826TF LA 5530 c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085	PDF
transistor C 5386 Abstract: 24 5805 054 000 829 c 4468 power transistor Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES P A C K A G E D IM E N S IO N S • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB	OCR Scan	2SC5184 SC-70 2SG5184-T1 2SC5184-T2 transistor C 5386 24 5805 054 000 829 c 4468 power transistor	PDF
lt 715 1111 Abstract: st zo 607 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEA TU R E • P A C K A G E DIMENSIONS in mm High gain, low noise • Small reverse transfer capacitance • C an operate at low voltage ¥ A B S O LU TE MAXIMUM RATINGS (Ta = 25 °C)	OCR Scan		PDF
AT415 Abstract: No abstract text available Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga	OCR Scan	AT-41511, T-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT415	PDF
A1604C Abstract: P16C T108 T450 T540 PA1604 Text: NEC •• ■5 / — K Compound Field Effect P o w er Transistor u ^ y U '> y ^ / ¿ P A 1 6 0 4 ¡ 2 /< 7 -M O S P A 1 6 4 F E T 7 K , F E T ^ & £ 4 / 'Jy 7 ^ ^ 7 - M 0 S m ill& C H f W /> i K, X T '/ h °^ ^ E - ^ f \| x g Jjf f lh L T ^ jU T '- T o $1	OCR Scan		PDF
TN3725 Abstract: TN3724 Text: Datasheet Central TN3724 TN3725 Semiconductor Corp. NPN SI LI CON SWITCHING TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE (EBC) Manufacturers of World Class Discrete Semiconductors U t b L K I r I I UN	OCR Scan	TN3724 TN3725 T0-237 TN3724, TN3725 500mA, 00MHz TN3724	PDF

TRANSISTOR K 117 Search Results

TRANSISTOR K 117 Result Highlights (5)

TRANSISTOR K 117 Datasheets Context Search

HEMT 36 ghz transistor

2SK3718

T2 MARKING SOT23-6

Untitled

KTC3620S

transistor 2sk

transistor NEC D 822 P

OXF*9

transistor RU101

Untitled

Untitled

220v 2a transistor

TRANSISTOR BJ 033

PN4356

1.4464

3004x

PN3639

2n3442

LA 5530

transistor C 5386

lt 715 1111

AT415

A1604C

TN3725