bd 142 transistor
Abstract: No abstract text available
Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of
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IB0912L200
IB0912L200
IB0912L200-REV-NC-DS-REV-C
bd 142 transistor
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AM0912-150
Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Text: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching
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AM0912-150
AM0912-150
JTIDS
2L TRANSISTOR
"RF Power Transistor"
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Untitled
Abstract: No abstract text available
Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to
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DD1411L
BLY87A
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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transistor tic 106
Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
Text: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has
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BLV935
OT273
OT273
OT273.
110fl2ti
transistor tic 106
Philips 2222-030
38109
heatsink catalogue
BLV935
chip die npn transistor
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Untitled
Abstract: No abstract text available
Text: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven
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uPA1911
D13455EJ1V0DS00
PA1911
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VCC36
Abstract: No abstract text available
Text: Afa Avionics Pulsed Power Transistor PH0912-40 40 Watts, 960-1215 MHz, 7 Features Preliminary Pulse, 50% Duty Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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PH0912-40
5b42SD5
VCC36
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transistor 355
Abstract: SHM-2E CC 1215
Text: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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PH0912-2
ShM2E05
transistor 355
SHM-2E
CC 1215
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Untitled
Abstract: No abstract text available
Text: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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PH0912-20
5b4220S
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MPS8098
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage
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MPS8098
625mW
T-29-21
100/iA,
100MHz
300ms,
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Untitled
Abstract: No abstract text available
Text: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration
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PH0912-150
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PH1417-200S
Abstract: F 140 F140 C5 155 10 PH1417
Text: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor
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PH1417-200S
Sb4220S
DDD12L
PH1417-200S
F 140
F140
C5 155 10
PH1417
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Untitled
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation
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PH0912-5
Sb42205
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CC 1215
Abstract: No abstract text available
Text: Aß Avionics Pulsed Power Transistor PH0912-10 Preliminary 10 Watts, 960-1215 MHz, 7 |is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration
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PH0912-10
SL42EDS
CC 1215
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Untitled
Abstract: No abstract text available
Text: KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D s r lin C jtO P Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD621230
Amperes/1200
7214b21
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marking tr
Abstract: 2SD1699 IEI-1213 MEI-1202 MF-1134 L1207
Text: DATA SHEET SILICON TRANSISTOR 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 16 99 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. Circuits. FEATURES • High DC Current gain.
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2SD1699
2SD1699
marking tr
IEI-1213
MEI-1202
MF-1134
L1207
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transistor 3l2
Abstract: No abstract text available
Text: fOMdZOT KD224503 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D d fH n C jtO n Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed tor use
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KD224503
Amperes/600
iMb21
transistor 3l2
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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300 volt 16 ampere transistor
Abstract: powerex ks62
Text: POldEREX INC =JñD D • 7ET4hai 00G2E03 m N ER EX ^ 1 KS621A40 Powerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 f Tentative Fast Switching Single Darlington Transistor Module 400 Amperes/125 Volts Description t<jTUNtC*A*U6 Powerex Fast Switching Single Transistor
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00G2E03
KS621A40
Amperes/125
KS621A40
KS621M0
300 volt 16 ampere transistor
powerex ks62
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PDF
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transistor s46
Abstract: KS621220A7 s45 diode DIODE S45 powerex ks62
Text: m/mac KS621220A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lt lQ lG D S r H t lC jt O n Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621220A7
Amperes/1200
transistor s46
KS621220A7
s45 diode
DIODE S45
powerex ks62
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS8098
625mW
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PDF
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7901S
Abstract: No abstract text available
Text: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.
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EN5099
FC154
FC154
2SC4270
2SA1669,
7901S
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MPSA45 equivalent
Abstract: transistor
Text: SAMSUNG SEMICONDUCTOR INC MPSA45 14E O JT T b M lM S 000731,2 3 NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: Vc*o =350V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPSA45
625mW
MPSA45 equivalent
transistor
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PDF
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MMT3823
Abstract: micro-T Package
Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is
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MMT3823
100-MHz
MMT3823
micro-T Package
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