Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR JT Search Results

    TRANSISTOR JT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR JT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of


    Original     		PDF IB0912L200 IB0912L200 IB0912L200-REV-NC-DS-REV-C bd 142 transistor

    AM0912-150

    Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
    Text: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching


    Original     		PDF AM0912-150 AM0912-150 JTIDS 2L TRANSISTOR "RF Power Transistor"

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF DD1411L BLY87A

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor tic 106

    Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
    Text: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has


    OCR Scan     		PDF BLV935 OT273 OT273 OT273. 110fl2ti transistor tic 106 Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven


    OCR Scan     		PDF uPA1911 D13455EJ1V0DS00 PA1911

    VCC36

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH0912-40 40 Watts, 960-1215 MHz, 7 Features Preliminary Pulse, 50% Duty Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-40 5b42SD5 VCC36

    transistor 355

    Abstract: SHM-2E CC 1215
    Text: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-2 ShM2E05 transistor 355 SHM-2E CC 1215

    Untitled

    Abstract: No abstract text available
    Text: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-20 5b4220S

    MPS8098

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage


    OCR Scan     		PDF MPS8098 625mW T-29-21 100/iA, 100MHz 300ms,

    Untitled

    Abstract: No abstract text available
    Text: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    OCR Scan     		PDF PH0912-150

    PH1417-200S

    Abstract: F 140 F140 C5 155 10 PH1417
    Text: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor


    OCR Scan     		PDF PH1417-200S Sb4220S DDD12L PH1417-200S F 140 F140 C5 155 10 PH1417

    Untitled

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-5 Sb42205

    CC 1215

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH0912-10 Preliminary 10 Watts, 960-1215 MHz, 7 |is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    OCR Scan     		PDF PH0912-10 SL42EDS CC 1215

    Untitled

    Abstract: No abstract text available
    Text: KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D s r lin C jtO P Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621230 Amperes/1200 7214b21

    marking tr

    Abstract: 2SD1699 IEI-1213 MEI-1202 MF-1134 L1207
    Text: DATA SHEET SILICON TRANSISTOR 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 16 99 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. Circuits. FEATURES • High DC Current gain.


    OCR Scan     		PDF 2SD1699 2SD1699 marking tr IEI-1213 MEI-1202 MF-1134 L1207

    transistor 3l2

    Abstract: No abstract text available
    Text: fOMdZOT KD224503 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D d fH n C jtO n Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed tor use


    OCR Scan     		PDF KD224503 Amperes/600 iMb21 transistor 3l2

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    300 volt 16 ampere transistor

    Abstract: powerex ks62
    Text: POldEREX INC =JñD D • 7ET4hai 00G2E03 m N ER EX ^ 1 KS621A40 Powerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 f Tentative Fast Switching Single Darlington Transistor Module 400 Amperes/125 Volts Description t<jTUNtC*A*U6 Powerex Fast Switching Single Transistor


    OCR Scan     		PDF 00G2E03 KS621A40 Amperes/125 KS621A40 KS621M0 300 volt 16 ampere transistor powerex ks62

    transistor s46

    Abstract: KS621220A7 s45 diode DIODE S45 powerex ks62
    Text: m/mac KS621220A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lt lQ lG D S r H t lC jt O n Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621220A7 Amperes/1200 transistor s46 KS621220A7 s45 diode DIODE S45 powerex ks62

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPS8098 625mW

    7901S

    Abstract: No abstract text available
    Text: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.


    OCR Scan     		PDF EN5099 FC154 FC154 2SC4270 2SA1669, 7901S

    MPSA45 equivalent

    Abstract: transistor
    Text: SAMSUNG SEMICONDUCTOR INC MPSA45 14E O JT T b M lM S 000731,2 3 NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: Vc*o =350V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPSA45 625mW MPSA45 equivalent transistor

    MMT3823

    Abstract: micro-T Package
    Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is


    OCR Scan     		PDF MMT3823 100-MHz MMT3823 micro-T Package