Untitled
Abstract: No abstract text available
Text: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN
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BUR20
BUR20
300ns,
10MHz
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transistor JSW
Abstract: jSw Diode
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
transistor JSW
jSw Diode
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TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
Text: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable
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0P-295/0P-495
OP-295
14-Lead
TRANSFORMER bck 03
transistor JSW 07
OP295
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.
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MG15Q6ES50A
961001EAA1
TjS125Â
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jSw Diode
Abstract: No abstract text available
Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG300Q2YS50
961001EAA1
jSw Diode
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transistor JSW
Abstract: toshiba srf
Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q2YS50
transistor JSW
toshiba srf
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transistor JSW
Abstract: diode JSW FL 576-K125
Text: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM
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6DI30M-050
E82988
l95t/R89
Shl50
transistor JSW
diode JSW
FL 576-K125
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q2YS50
TjS125Â
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BA4904A
Abstract: AV011 av033 BA3906
Text: BA3902 BA3904A BA3906 Power supply, standard voltag The BA3902, BA3904A, and BA3906 are power supplies used in car audio systems. Features • available in an SIP-M12 package • four power sources available from each IC — BA3902: 5.0 V, 8.5 V x2 , 9.0 V
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BA3902
BA3904A
BA3906
BA3902,
BA3904A,
BA3906
SIP-M12
BA3902:
BA3904A:
BA3906:
BA4904A
AV011
av033
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Untitled
Abstract: No abstract text available
Text: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current
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120pA
T0-220
LT1072
LT1082
LT1082
T0-22Q
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AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at
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AN4001
MRF151A
12MHz,
AN4001
laser diode spice model simulation
Class E amplifier
300 watt mosfet amplifier class AB
MRF transistor
PIN diode MACOM SPICE model
27.12MHz power amplifier
27.12Mhz
500 watt mosfet power amplifier circuit diagram
1000 watt mosfet power amplifier
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ic 7485 4 bit comparator
Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
Text: ^ Tex as In s t r u m e n t s CD4585B Types Data sheet acquired from Harris S em iconductor SCHS091 CMOS 4-Bit Magnitude Comparator High Voltage Types 20-Volt Rating • CD4585B is a 4-bit magnitude com parator designed for use in computer and logic applications that require the comparison
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SCHS091
CD4585B
20-Volt
CD45858
ic 7485 4 bit comparator
16 bit comparator using 74*85 IC
CD40298
Ic 7485 comparator function table
transistor JSW
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tc6105
Abstract: 2SK679 BH rn transistor 10285 TC-6105
Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8
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2SK679
2SK679Ã
TC-6105
tc6105
2SK679
BH rn transistor
10285
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Amplitude Modulation using tractor diode
Abstract: RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135
Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V Hz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable
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SSM2135
SSM-2135
volt75Eâ
SSM-2135
2000E
65E-04
Amplitude Modulation using tractor diode
RS1016
PMI PM7528
transistor de audio fp 1016
transistor audio fp 1016
PM-7528
BF253
electret condenser microphone preamplifier
professional microphone preamp
SSM2135
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differential electret condenser microphone preamp
Abstract: transistor JSW 12 SSM2135
Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V fiz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable
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SSM2135
SSM-2135
differential electret condenser microphone preamp
transistor JSW 12
SSM2135
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transistor JSW 12
Abstract: Sonic Drive SSM2135
Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V H z Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable
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SSM2135
SSM-2135
transistor JSW 12
Sonic Drive
SSM2135
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BTS5480SF
Abstract: GPS01 bts5480 jsw marking GPS01089 JESD51-2 DSA0096557 transistor JSW 12
Text: SPI Power Controller SPOC - BTS5480SF For Advanced Front Light Control Data Sheet Rev. 1.0, 2010-04-12 Automotive Power SPOC - BTS5480SF Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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BTS5480SF
BTS5480SF
GPS01
bts5480
jsw marking
GPS01089
JESD51-2
DSA0096557
transistor JSW 12
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transistor JSW
Abstract: No abstract text available
Text: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable
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OP-113/0P-213/0P-413*
OP-113
53E16
OP113
transistor JSW
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GPS01089
Abstract: DCPWM JESD51-2
Text: SPI Power Controller SPOC - BTS6460SF For Advanced Front Light Control Data Sheet Rev. 1.0, 2010-04-12 Automotive Power SPOC - BTS6460SF Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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BTS6460SF
GPS01089
DCPWM
JESD51-2
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BTS6480SF
Abstract: PSH5 SPI pwm generator transistor mj 4035 GPS01089 JESD51-2
Text: SPI Power Controller SPOC - BTS6480SF For Advanced Front Light Control Data Sheet Rev. 1.0, 2010-04-12 Automotive Power SPOC - BTS6480SF Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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BTS6480SF
BTS6480SF
PSH5
SPI pwm generator
transistor mj 4035
GPS01089
JESD51-2
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transistor JSW 07
Abstract: BTS5562E
Text: Data Sheet, Rev. 1.0, May 2008 SPOC - BTS5562E SPI Power Controller Automotive Power SPOC - BTS5562E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5562E
transistor JSW 07
BTS5562E
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BTS5662E
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5662E SPI Power Controller Automotive Power SPOC - BTS5662E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5662E
BTS5662E
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BTS5572E
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.0, May 2008 SPOC - BTS5572E SPI Power Controller Automotive Power SPOC - BTS5572E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5572E
BTS5572E
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BTS5672E
Abstract: transistor JSW 12
Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5672E SPI Power Controller Automotive Power SPOC - BTS5672E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5672E
BTS5672E
transistor JSW 12
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