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    TRANSISTOR JC SOT 23 Search Results

    TRANSISTOR JC SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR JC SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    q2n222

    Abstract: Q2N4921 R5460
    Text: a Precision Low Drift 2.048 V/2.500 V SOT-23 Voltage References with Shutdown ADR390/ADR391 PIN CONFIGURATION 5-Lead SOT-23 RT Suffix FEATURES Load Regulation: 60 ppm/mA Line Regulation: 25 ppm/V Wide Operating Range: 2.4 V–18 V for ADR390 2.8 V–18 V for ADR391


    Original     		PDF OT-23 ADR390/ADR391 OT-23 ADR390 ADR391 OT-23-5 ADR390/ ADR391 ADR39x q2n222 Q2N4921 R5460

    Q2N2222 data sheet

    Abstract: q2n2222 transistor q2n2222 Q2N4921 transistor R1A q2n222 kelvin 1102 SOT 23 r1a ADR390 ADR391
    Text: a Precision Low Drift 2.048 V/2.500 V SOT-23 Voltage References with Shutdown ADR390/ADR391 PIN CONFIGURATION 5-Lead SOT-23 RT Suffix FEATURES Load Regulation: 60 ppm/mA Line Regulation: 25 ppm/V Wide Operating Range: 2.4 V–18 V for ADR390 2.8 V–18 V for ADR391


    Original     		PDF OT-23 ADR390/ADR391 OT-23 ADR390 ADR391 OT-23-5 ADR390/ ADR39x 390/ADR391. Q2N2222 data sheet q2n2222 transistor q2n2222 Q2N4921 transistor R1A q2n222 kelvin 1102 SOT 23 r1a ADR390 ADR391

    a8805

    Abstract: AME8805AEGTZ AME8805OEFT AME8805 AME8805AEFT AME8805AEFTZ AME8805BEFT AME8805BEFTZ AME8805CEFT AME8813
    Text: AME AME8805 / 8813 n General Description The AME8805/8813 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-89, SOT-223 and SOT-23 packages are attractive for "Pocket" and "Hand Held" applications.


    Original     		PDF AME8805 AME8805/8813 OT-89, OT-223 OT-23 600mA 600m2 2006/2095-DS8805/8813-R a8805 AME8805AEGTZ AME8805OEFT AME8805AEFT AME8805AEFTZ AME8805BEFT AME8805BEFTZ AME8805CEFT AME8813

    Q2N222

    Abstract: q2n2222 transistor Q2N2222 Q2N2222 data sheet kelvin 1102 Q2N4921 2N3906 AD589 ADR390 ADR391
    Text: a Precision Low Drift 2.048 V/2.500 V SOT-23 Voltage References with Shutdown ADR390/ADR391 FEATURES Initial Accuracy: ؎6 mV Max Low TCVO: 25 ppm/؇C Max Load Regulation: 60 ppm/mA Line Regulation: 25 ppm/V Wide Operating Range: 2.4 V–18 V for ADR390 2.8 V–18 V for ADR391


    Original     		PDF OT-23 ADR390/ADR391 ADR390 ADR391 OT-23-5 OT-23 ADR390/ C3863 Q2N222 q2n2222 transistor Q2N2222 Q2N2222 data sheet kelvin 1102 Q2N4921 2N3906 AD589 ADR390 ADR391

    Linear Regulator sot-89-5

    Abstract: APL5902 DIODE CBP Schottky Diode SOT-89 27BSC APL5901 STD-020C
    Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features Built in Current Limit Protection Controlled Short Circuit Current : 200mA Fast Transient Response Short Setting Time SOT-89, SOT-89-5, SOT-223, SO-8 ,TO-252 and TO-252-5 Packages Lead Free Available RoHS Compliant


    Original     		PDF APL5901/2 900mA 100Hz 100kHz) 210mV 900mA) APL5901/2 Linear Regulator sot-89-5 APL5902 DIODE CBP Schottky Diode SOT-89 27BSC APL5901 STD-020C

    SOT89 voltage regulator marking code 93

    Abstract: 51AX 156 20k Tantalum Capacitor 156 Tantalum Capacitor 16B APL5501 STD-020C diodes sc62 MARKING CODE sot-23-5 marking code ic Linear Regulator sot-89-5
    Text: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 170mV (@500mA) Very low Shutdown Current : < 0.5uA


    Original     		PDF APL5501/2/3 500mA APL5501/2/3 OT-23-5, OT-89, OT89-5, OT-223, O-252 O-252-5 SOT89 voltage regulator marking code 93 51AX 156 20k Tantalum Capacitor 156 Tantalum Capacitor 16B APL5501 STD-020C diodes sc62 MARKING CODE sot-23-5 marking code ic Linear Regulator sot-89-5

    sot 23 code 27A

    Abstract: sot-23 Marking 27A E 14a 15a 16a 17a 18a 19a 20a sot23 STD-020C SOT89 voltage regulator marking code 93 30A A1 SOT-23 MOSFET P-CHANNEL marking 31A marking codes transistors a1 sot-23 marking JC sot-23-5 sot 23-5 marking code APL5101
    Text: APL5101/2 150mA, 4µA Quiescent Current Regulator Features General Description • Ultra Low Quiescent Current: 4µA The APL5101/2 are micro-power, ultra low dropout • Ultra Low Dropout Voltage: linear regulator, which operate from 2V to 6V input 200mV@3.3V/150mA


    Original     		PDF APL5101/2 150mA, APL5101/2 200mV V/150mA 150mA. 150mA 100mV sot 23 code 27A sot-23 Marking 27A E 14a 15a 16a 17a 18a 19a 20a sot23 STD-020C SOT89 voltage regulator marking code 93 30A A1 SOT-23 MOSFET P-CHANNEL marking 31A marking codes transistors a1 sot-23 marking JC sot-23-5 sot 23-5 marking code APL5101

    14a 15a 16a 17a 18a 19a 20a sot23

    Abstract: SOT89 transistor marking 7F SOT89 voltage regulator marking code 93 sot 23-5 marking code L2 SOT-23-5 marking 10QX TRANSISTOR JC SOT 23 30A sot-89 MARKING TR SOT23-3 P MOSFET APL5101
    Text: APL5101/2 150mA, 4µA Quiescent Current Regulator Features General Description • • The APL5101/2 are micro-power, ultra low dropout linear regulator, which operate from 2V to 6V input voltage and deliver up to 150mA. Typical dropout voltage is only 200mV at 150mA loading. Designed


    Original     		PDF APL5101/2 150mA, APL5101/2 150mA. 200mV 150mA OT-89 14a 15a 16a 17a 18a 19a 20a sot23 SOT89 transistor marking 7F SOT89 voltage regulator marking code 93 sot 23-5 marking code L2 SOT-23-5 marking 10QX TRANSISTOR JC SOT 23 30A sot-89 MARKING TR SOT23-3 P MOSFET APL5101

    transistor b 103

    Abstract: OPA501 AB-037 AB-038 AB-039 MMBC005 OPA501AM
    Text: OPA501 SBOS136A – JANUARY 1983 – REVISED DECEMBER 2003 High Current, High Power OPERATIONAL AMPLIFIER FEATURES ● ● ● ● APPLICATIONS HIGH OUTPUT CURRENT: ±10A Peak WIDE POWER SUPPLY RANGE: ±10V to ±40V LOW QUIESCENT CURRENT: 2.6mA ISOLATED CASE TO-3 PACKAGE


    Original     		PDF OPA501 SBOS136A OPA501 transistor b 103 AB-037 AB-038 AB-039 MMBC005 OPA501AM

    AB-038

    Abstract: AB-039 OPA501 OPA501AM OPA501BM OPA501RM OPA501SM TO-5 metal case for transistor
    Text: OPA501 High Current, High Power OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● HIGH OUTPUT CURRENT: ±10A Peak ● MOTOR DRIVER ● WIDE POWER SUPPLY RANGE: ±10 to ±40V ● LOW QUIESCENT CURRENT: 2.6mA ● ISOLATED CASE TO-3 PACKAGE ● ● ● ● SERVO AMPLIFIER


    Original     		PDF OPA501 OPA501 AB-038 AB-039 OPA501AM OPA501BM OPA501RM OPA501SM TO-5 metal case for transistor

    motorola transistor dpak marking

    Abstract: mtd3302-d AN569 MTD3302 MTD3302T4 SMD310 sot323 transistor marking MOTOROLA transistor c 458 K 741 MOSFET
    Text: MOTOROLA Order this document by MTD3302/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD3302 WaveFET Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor  SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 10 mW WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s


    Original     		PDF MTD3302/D MTD3302 motorola transistor dpak marking mtd3302-d AN569 MTD3302 MTD3302T4 SMD310 sot323 transistor marking MOTOROLA transistor c 458 K 741 MOSFET

    AT1117

    Abstract: variator resistor IN4002 precision regulator 1117 sot 89
    Text: AT1117 1.0A Low Dropout Precision Regulator Immense Advance Tech. FEATURES DESCRIPTION Space Saving SOT-223 Surface Mount Package 3-Terminal Adjustable or Fixed 1.5V, 1.8V, 2.5V, 3.3V, 5V Output Current of 1A Guaranteed Dropout Voltage at Multiple Current


    Original     		PDF AT1117 OT-223 AT1117 variator resistor IN4002 precision regulator 1117 sot 89

    aot 1106

    Abstract: transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400
    Text: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'Jb O D O IS ia ■ ALGG BUX 84 • BUX 85 Silicon NPN Power Transistors r - 3 3 - ii ! Applications: Switching mode power supply Features: • Short switching times • Power dissipation 40 W • In multi diffusion technique


    OCR Scan     		PDF 15A3DIN aot 1106 transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400

    transistor 13007

    Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T- 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF 15A3DIN transistor 13007 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR

    LAE4002S

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4002S FEATURES PINNING-SOT100 • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile


    OCR Scan     		PDF LAE4002S PINNING-SOT100 MAM312 MBC878 OT100. LAE4002S SC15

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING - SOT1ÛO • Self-aligned process entirely ion implanted and gold sandwich metallization PIN • Optimum temperature profile • Excellent performance and reliability.


    OCR Scan     		PDF LAE4001R

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4002S FEATURES PINNING -SOT100 • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile


    OCR Scan     		PDF -SOT100 LAE4002S

    transistor 3005

    Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER


    OCR Scan     		PDF CT60AM-20 20MAX. T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S transistor 3005 transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ISIP Ô23b320 001724b S S M B T 4126 PNP Silicon Sw itching Transistor SIEMENS/ SPCL-, SEMICONDS _ T - 3 7 - I5 " High current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Type M arking Ordering code for ve rsio ns in bulk Ordering code for


    OCR Scan     		PDF 23b320 001724b S3b32Q

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage


    OCR Scan     		PDF 23b320 BF622 Q62702-F568 Q62702-F1052

    Xr 1075

    Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320
    Text: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic


    OCR Scan     		PDF BFG92A; BFG92A/X; BFG92A/XR BFG92 OT143 BFG92A BFG92A/X MSB014 OT143. Xr 1075 BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320

    42t sot-23

    Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
    Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


    OCR Scan     		PDF BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715

    D02fc

    Abstract: transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6
    Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES DESCRIPTION • High power gain Silicon NPN transistor in a 4-lead dual-emitter SOT 172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application


    OCR Scan     		PDF BFQ621 D02fc transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan     		PDF NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1