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    TRANSISTOR J45 Search Results

    TRANSISTOR J45 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP 109 transistor

    Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
    Text: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.


    Original     		PDF AI1010 CHK015A AN0019 AN0020 ES-CHK015A-SMA AI10101182 BP 109 transistor transistor BP 109 CHK015A-SMA HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01

    mrf313

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF313/D MRF313 MRF313 MRF313/D* MRF313/D

    MRF313

    Abstract: vk200 5Bp power BALLAST MOTOROLA
    Text: MOTOROLA Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF313/D MRF313 MRF313/D* MRF313 vk200 5Bp power BALLAST MOTOROLA

    VK200 FERRITE

    Abstract: VK200-20/4B vk200 vk200 ferrite bead MRF313 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ vk200-20 FERROXCUBE VK200 CASE 305A-01 vk200* FERROXCUBE
    Text: Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF313/D MRF313 VK200 FERRITE VK200-20/4B vk200 vk200 ferrite bead MRF313 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ vk200-20 FERROXCUBE VK200 CASE 305A-01 vk200* FERROXCUBE

    TP3007S

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP3007S/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3007S The TP3007S is designed for 24 volts common emitter base station amplifiers, operating up to 1 GHz bandwidth. It has been specifically designed


    Original     		PDF TP3007S/D TP3007S TP3007S TP3007S/D*

    Untitled

    Abstract: No abstract text available
    Text: na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-6960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Collector diode voltage VCI! . -SO volts (Y*;it — —1-5 volts) Emitter diode voltage YK1!0 .,.;.-[0 volts


    Original     		PDF

    optocoupler a 4504

    Abstract: a 4504 HCPL-4504 HCPL4504 4504 opto HCNW4504 hcpl series E55361 HCPL-0454 HCPL-J454
    Text: High CMR, High Speed Optocouplers HCPL-4504 HCPL-J454 HCPL-0454 HCNW4504 Technical Data Features • Short Propagation Delays for TTL and IPM Applications • 15 kV/µs Minimum Common Mode Transient Immunity at VCM = 1500 V for TTL/Load Drive • High CTR at TA = 25°C


    Original     		PDF HCPL-4504 HCPL-J454 HCPL-0454 HCNW4504 HCPL-4504/0454 HCPL-4504 optocoupler a 4504 a 4504 HCPL4504 4504 opto HCNW4504 hcpl series E55361 HCPL-0454 HCPL-J454

    Untitled

    Abstract: No abstract text available
    Text: High CMR, High Speed Optocouplers HCPL-4504 HCPL-J454 HCPL-0454 HCNW4504 Technical Data Features • Short Propagation Delays for TTL and IPM Applications • 15 kV/µs Minimum Common Mode Transient Immunity at VCM = 1500 V for TTL/Load Drive • High CTR at TA = 25°C


    Original     		PDF HCPL-4504 HCPL-J454 HCPL-0454 HCNW4504 HCPL-4504/0454 HCPL-4504

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    mj4502

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR


    OCR Scan     		PDF MJ4502/D J4502 MJ802 O-204AA mj4502

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    BLW89

    Abstract: philips resistor CR37 blw89 transistor CR37
    Text: PHILIPS INTERNATIONAL bSE D 711002 D 0 b 3 3 7 ,:î 2öM PHIN B LW 89 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 00b337cà BLW89 BLW89 7110flSb 00b33à 7Z83365 7Z83368 philips resistor CR37 blw89 transistor CR37

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    transistor tt 2222

    Abstract: ic TT 2222 BLW 89 blw89 transistor
    Text: PHILIPS INTERNATIONAL bSE D m 7110fl5b GübBB?'! EÔ4 PHIN BLW 89 J \ _ U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 7110fl5b GDb33 BLW89 711002b 00b33 transistor tt 2222 ic TT 2222 BLW 89 blw89 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J4502 High-Pow er PNP Silicon Ttansistor . . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS • High DC Current Gain — hpE = 2 5 -1 0 0 @ lc = 7.5 A


    OCR Scan     		PDF J4502 100-Watts MJ802

    vk200-20

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF313 . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —


    OCR Scan     		PDF MRF313 05A-01, 56-590-65/4B VK200-20/4B MRF313 vk200-20

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.


    OCR Scan     		PDF MRF313 56-590-65/4B VK200-20/4B MRF313

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    k106 transistor

    Abstract: IRC643 IRF642 IRF643 IRF642 ge C643
    Text: IRF642,643 l5 116 AMPERES 200,150 VOLTS Rd S ON = 0.22 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		PDF IRF642 TC-26I 100ms k106 transistor IRC643 IRF643 IRF642 ge C643

    2SC1424

    Abstract: 2SC4090 017 545 71 32 02 2SC2026
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF


    OCR Scan     		PDF NE73435) NE734 NE73400) S12S21| 2SC1424 2SC4090 017 545 71 32 02 2SC2026

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    TP251 transistor

    Abstract: tp251
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor . . . designed p rim a rily fo r p o rta b le radio a pp licatio n s re q u irin g lo w b a tte ry voltag e . These parts have been desig n ed and characterized fo r o pe ra tio n in the fre q u en cy range


    OCR Scan     		PDF TP251 TP251 transistor tp251

    TP3007S

    Abstract: 1206 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor T h e T P 3 0 0 7 S is d e s ig n e d fo r 24 v o lts c o m m o n e m itte r b a se sta tio n amplifiers, operating up to 1 GHz bandwidth. It has been specifically designed for use in analog and digital G lobal S ystem M obile G SM system s. The


    OCR Scan     		PDF TP3007S 1206 transistor