Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR J4 Search Results

    TRANSISTOR J4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original
    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    ceramic trimmer capacitor

    Abstract: transistor Common Base configuration philips Trimmer 60 pf BLY88C MSB056 15 w RF POWER TRANSISTOR NPN BLy88 list of transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY88C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original
    BLY88C SC08a ceramic trimmer capacitor transistor Common Base configuration philips Trimmer 60 pf BLY88C MSB056 15 w RF POWER TRANSISTOR NPN BLy88 list of transistor PDF

    BLW80

    Abstract: transistor rf m 1104
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


    Original
    BLW80 BLW80 transistor rf m 1104 PDF

    BD443

    Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original
    BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf PDF

    BD443

    Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original
    BLW76 BD443 BLW76 BD228 philips polystyrene capacitor MGP501 PDF

    BLV11

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV11 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and


    Original
    BLV11 BLV11 PDF

    Philips polystyrene capacitors

    Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB


    Original
    BLW76 SC08a Philips polystyrene capacitors capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59 PDF

    BLY88C

    Abstract: MSB056 1015 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY88C VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and


    Original
    BLY88C BLY88C MSB056 1015 TRANSISTOR PDF

    SGA9289Z

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original
    SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 PDF

    SGA9289Z

    Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original
    SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Rev. V1 Features •       MAGX-000025-150000 GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation


    Original
    MAGX-000025-150000 MAGX-000025-150000 GX0025-150 PDF

    mj4502

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR


    OCR Scan
    MJ4502/D J4502 MJ802 O-204AA mj4502 PDF

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


    Original
    SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / M OS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit ; mm The 2S J462 is a switching device which can be driven directly 5.7 ± 0 J by an 1C operating at 3 V,


    OCR Scan
    2SJ462 2SJ462 PDF

    Radar

    Abstract: PH1214-12M radar 77 ghz
    Text: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration


    Original
    PH1214-12M PH1214-12M pul2266, Radar radar 77 ghz PDF

    blf878

    Abstract: ez90 j4213 Bv 42 transistor J0314 Reference blf878
    Text: BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original
    BLF878 BLF878 ez90 j4213 Bv 42 transistor J0314 Reference blf878 PDF

    j4213

    Abstract: blf878 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314
    Text: BLF878 UHF power LDMOS transistor Rev. 01 — 15 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from


    Original
    BLF878 BLF878 j4213 rogers 5880 Bv 42 transistor J3125 h a 431 transistor Reference blf878 transistor w 431 PDF Datasheets 900 mhz av transmitter J0314 PDF

    PH1214-40M

    Abstract: Radar
    Text: Radar Pulsed Power Transistor 40 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-40M PH1214-40M Radar Pulsed Power Transistor - 40 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original
    PH1214-40M PH1214-40M Radar PDF

    J33 TRANSISTOR

    Abstract: PH1214-110M Radar
    Text: Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-110M PH1214-110M Radar Pulsed Power Transistor - 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original
    PH1214-110M PH1214-110M J33 TRANSISTOR Radar PDF

    3 pin transistor 10 amp

    Abstract: Radar TRANSISTOR J13 5 pin transistor 3 amp PH1214-80M power transistor 13 w 12 transistor
    Text: Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M PH1214-80M Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original
    PH1214-80M PH1214-80M 3 pin transistor 10 amp Radar TRANSISTOR J13 5 pin transistor 3 amp power transistor 13 w 12 transistor PDF

    RADAR

    Abstract: PH1214-25M transistor 25 4 ghz transistor
    Text: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor


    Original
    PH1214-25M PH1214-25M RADAR transistor 25 4 ghz transistor PDF