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    TRANSISTOR J3305 Search Results

    TRANSISTOR J3305 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J3305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j3305

    Abstract: j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3
    Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


    Original     		PDF FJD3305H1 j3305 j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3

    j3305h1

    Abstract: No abstract text available
    Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


    Original     		PDF FJD3305H1 j3305h1

    j3305

    Abstract: FJD3305H1TM j3305h1 FJD3305H1
    Text: FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted


    Original     		PDF FJD3305H1 FJD3305H1 j3305 FJD3305H1TM j3305h1

    j3305

    Abstract: j3305-1 TRANSISTOR J3305-1 j3305-2 transistor j3305-2 J3305-2 y transistor J3305-2 transistor transistor j3305 TO220 Semiconductor Packaging FJP3305H2TU
    Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted


    Original     		PDF FJP3305 FJP3305 O-220 O-220-3 FJP3305H1TU FJP3305H2TU FJP3305TU j3305 j3305-1 TRANSISTOR J3305-1 j3305-2 transistor j3305-2 J3305-2 y transistor J3305-2 transistor transistor j3305 TO220 Semiconductor Packaging

    J3305

    Abstract: TRANSISTOR J3305-1 J3305-2 y transistor transistor j3305 J3305-2 transistor transistor j3305-2
    Text: FJPF3305 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter * Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF FJPF3305 FJPF3305 O-220F FJPF3305H1TU FJPF3305H2TU FJPF3305TU J3305 TRANSISTOR J3305-1 J3305-2 y transistor transistor j3305 J3305-2 transistor transistor j3305-2