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    TRANSISTOR J 330 Search Results

    TRANSISTOR J 330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J 330 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BLW60C

    Abstract: No abstract text available
    Text: , Line, J.£.i±£.ii tx >J TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


    Original     		BLW60C BLW60C PDF

    PH2729-65M

    Abstract: No abstract text available
    Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    Original     		PH2729-65M Curren44) 2052-56X-02 PH2729-65M PDF

    9R120C

    Abstract: IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22
    Text: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 260 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW90R120C3 PG-TO247 9R120C 9R120C IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22 PDF

    ktc5707d

    Abstract: ktc5707
    Text: SEMICONDUCTOR KTC5707D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. A FEATURES I C Adoption of FBET, MBIT Processes. J D High Current Capacitance. B Low Collector-to-Emitter Saturation Voltage.


    Original     		KTC5707D/L ktc5707d ktc5707 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'iai QQEfiTfiS IEE B LV33 _ J \ _ V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for television


    OCR Scan     		BLV33 BLV33 PDF

    11AA4

    Abstract: No abstract text available
    Text: H llA A l - H11AA4 tSOCOM AC INPUT COUPLED ISOLATOR Ga AS INFRARED EMITTING DIODE & NPN PHOTO-TRANSISTOR PACKAGEDEMENSIONSINCHES MM SCHEMATIC j 44_ .070 (1.78) Typ .100 (2.54) -M Typ -* j 1 *- 1 ! h u.140 (Ì.56)Min (si a t ^¡1/ o Q) (¿) (j .350 (8.89)


    OCR Scan     		H11AA4 11AA4 H11AA3 H11AA1 H11AA2 500VDC) 100ft) 100i2) DA91043-AAS/01 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323


    OCR Scan     		DQ25T47 PMST4403 OT323 MAM096 bbS3T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:


    OCR Scan     		PVB42004X PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.


    OCR Scan     		BUZ45A_ bb53T31 0014bS7 T-39-13 T-39-13 D014bST BUZ45A PDF

    BLU98

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE T> m bbS3S3i ooeaaaB BLU98 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • emitter-ballasting resistors fo r an optimum temperature profile


    OCR Scan     		BLU98 OT-103) OT-103. bb53T31 BLU98 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHI LIP S/ DIS CR ETE j DhE D • PowerMOS transistor bbEBTBl 0014615 5 ■ BUZ155 T- 3V' 13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ155 T0218AA; T-39-13 bb53T31 0014fl21 BUZ355 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.


    OCR Scan     		BLV90/SL OT-172D) PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bbSS^l DQ150fl3 b PKB3005U MAINTENANCE TYPE J for new design use PVB32005X MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.


    OCR Scan     		DQ150fl3 PKB3005U PVB32005X) PDF

    transistor 3007A

    Abstract: No abstract text available
    Text: 7 cn ? Q 7 b DOISDST Ibfi O rd e rin g n u m b e r: E N 4 0 9 4 LB1741 No.4094 J Monolithic Digital IC SAKYO i Octal NPN Darlington-pair _ Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it


    OCR Scan     		LB1741 LB1741 18-pin DIP20H DIP16F FP30S transistor 3007A PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/MSCRETE b^E » • bbS 3131 0 0 2 ^ 1 1 0 'lb? « A P X BLV90 _ J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile


    OCR Scan     		BLV90 OT-172) bb53R31 PDF

    t430 transistor

    Abstract: 5252 F ic BT129 IC 2576 5.0v LT 5252 TI42 t514 TRANSISTOR transistor 2sb605 2SB605 016K
    Text: SEC j m*Ti\rx A S ilic o n T r a n s is to r _ 2SB605 P N P ik 7 + '> 7 ^ ' > >J □ > h =7 7 .9 PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o t — r" 'i 7 > ~7 ° ¥ f c o V KMffl/ PACKAGE DIMENSIONS * y 4 U n it : mm


    OCR Scan     		2SB605 02SD5711 PWS10ms, t430 transistor 5252 F ic BT129 IC 2576 5.0v LT 5252 TI42 t514 TRANSISTOR transistor 2sb605 2SB605 016K PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


    OCR Scan     		LbS3T31 LTE21025R FO-41B) PDF

    transistor WT7

    Abstract: buzzer smt transistor RU101 RU101 buzzer piezoelectric circuit piezoelectric buzzer 3V buzzer 5V DC smt a1 transistor T146 T147
    Text: h 7 > v X $ / T ransistors RU101 h 7 RU101 > y ^ 5 t i - 7 h Transistor Unit Composite Transistor K:7< ^ /Piezoelectric Buzzer Driver • i'i-Jfi \ti£Hl/Dim ensions (Unit : mm) h 1) "7 V V X it r o t a $ 1 u -7 D. K 7 < ( S I ) <>H "J V u l(?)H M) I


    OCR Scan     		RU101 SC-59 0Dllb13 10mA/0 V/10mA 100MHz transistor WT7 buzzer smt transistor RU101 RU101 buzzer piezoelectric circuit piezoelectric buzzer 3V buzzer 5V DC smt a1 transistor T146 T147 PDF

    buz45

    Abstract: No abstract text available
    Text: PowerMOS transistor_BUZ45 N AMER PHILIPS/DISCRETE QbE J> M tbS3T31 0014b47 T • _ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		BUZ45 tbS3T31 0014b47 BUZ45_ bb53T31 0014bSl T-39-13 bbS3T31 buz45 PDF

    Untitled

    Abstract: No abstract text available
    Text: l i i y * j i L M-Tjr iìr n i jim i - » j i m 140 Commerce Drive iW i§ Cwi\jS G rn t Tèi: Montgomeryviile, PA 18936-1013 w w » * * * 215 6 3 1-9 840 „ - . 4 O L Ì I m -. 1- UI 3 RF & MICROWAVE TRANSiSTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR


    OCR Scan     		108-152MHz IVH35) SD101S SD1015 108152MHz PDF

    WE VQE 24 E

    Abstract: WE VQE 11 E WE VQE 24
    Text: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V


    OCR Scan     		IRG4PH40K WE VQE 24 E WE VQE 11 E WE VQE 24 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,


    OCR Scan     		IRG4PH40KD PDF

    nf 0036 diode

    Abstract: Diode 15630 CM1000HA-28H cm50dy-28 CM1200HA-34H
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1400 VOLT HIGH PERFORMANCE H-SERIES IGBTMOD TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c = 25 C (T j Maximum = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS


    OCR Scan     		CM300HA-28H CM400HA-28H CM600HA-28H CM800HA-28H CM1000HA-28H nf 0036 diode Diode 15630 cm50dy-28 CM1200HA-34H PDF

    71009 SB

    Abstract: BLV100 71108Sb 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: . Philips Semiconductors • 7110asb DOtaBlDQ T71 ■ I P H I N 1 •*J PHILIPS INTERNATIONAL UHF power transistor _ . , . Product specification bSE D BLV100 PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an


    OCR Scan     		71108Sb BLV100 OT171 -SOT171 CA91E 71009 SB BLV100 35 W 960 MHz RF POWER TRANSISTOR NPN PDF