DD05215
Abstract: ADD1210
Text: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking
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HAL115
6251-414-2PD
4tfl2711
DD05215
ADD1210
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 D00S213 410 • Edition June 30, 1995 6251-414-2PD "I I I II I | ITT Semiconductors - I I I HAL115 Hall Effect Sensor 1C in CMOS technology I PRELIMINARY DATASHEET Marking Code Release Notes: Revision bars indicate significant
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HAL115
4bfl2711
D00S213
6251-414-2PD
HAL115
115UA
OT-89A:
IEC68-2-58
O-92UA:
IEC68-2-20
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Untitled
Abstract: No abstract text available
Text: SL6690C Semiconductors SL6690C MONOLITHIC CIRCUIT FOR PAGING RECEIVERS T he S L6690C is an IF s y s te m fo r paging receivers, c o n s is tin g o f a lim itin g IF a m p lifie r, q ua dra ture d e m o d u la to r, volta g e re g u la to r and a u d io tone a m p lifie r
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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itt 4116
Abstract: itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4
Text: ITT4116 16384-Bit Dynamic Random Access Memory 7-8 PHONb: 415 961-8121 TWX: (910) 379-6497 1121 SAN ANTONIO ROAD PALO ALTO, CALIF. 94303 TTT * 1 semiconductors * ITT4116 16384-Bit Dynamic Random Access Memory Features - Industry standard 16 pin DIP - 150 ns access time (ITT 4116-2)
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ITT4116
16384-Bit
ITT4116
6251-121-5E
itt 4116
itt capacitors
4116 memory
4116 ITT
IC 4027 pin diagram
4116
4027 itt
ITT SEMICONDUCTORS
ITT4
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Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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2066 TVPO
Abstract: TVPO-2066 ITT ccu 3000 i IC ccu 2030 ITT CCU TVPO2066 transistor ITT ITT Semiconductors CCU 3060 NVM 3060
Text: NVM 3060 4096-Bit EEPROM Edition Feb. 14, 1990 6251-309-2/E ITT Semiconductors NVM 3060 Contents Page Section Title 3 1. Introduction 4 4 4 4 5 5 5 5 7 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.5.1. 2.5.2. 2.5.3. Specifications Outline Dimensions Pin Connections Pin Descriptions
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4096-Bit
6251-309-2/E
306ITT
2066 TVPO
TVPO-2066
ITT ccu 3000 i
IC ccu 2030
ITT CCU
TVPO2066
transistor ITT
ITT Semiconductors CCU
3060
NVM 3060
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Untitled
Abstract: No abstract text available
Text: HAL556, HAL566 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology D esignation o f Hall Sensors HALXXXPP-T t Temperature Range: E or C _ Package: UA for TO-92UA, S for SOT-89A _ Type: 556,566 Features: - current output for two-wire application
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HAL556,
HAL566
O-92UA,
OT-89A
HAL566UA-E
O-92UA
OT-89A:
O-92UA:
4bA2711
00Q5flfc
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ITT DIODE 125
Abstract: to92ua ITT Semiconductors 115c hall HALL Sensor TO92UA ITT Intermetall itt capacitor ITT Semiconductor IEC-68-2-58 INTERMETALL
Text: “ íJé 997 ITT INTERMETALL • 4fafl2711 DDGbS7E TMb ■ HAL115 Marking Code Hall Effect Sensor IC in CMOS technology Temperatiire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA 115E 115C - operates with magnetic fields from DC to 20 kHz
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4fafl2711
HAL115
OT-89A:
O-92UA:
4bfl2711
b27fl
ITT DIODE 125
to92ua
ITT Semiconductors
115c hall
HALL Sensor TO92UA
ITT Intermetall
itt capacitor
ITT Semiconductor
IEC-68-2-58
INTERMETALL
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BU4507AX
Abstract: TRANSISTOR BU4507AX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
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BU4507AX
100-P
BU4507AX
TRANSISTOR BU4507AX
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ITT DIODE 125
Abstract: No abstract text available
Text: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA
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HAL115
115UA
HAL115S
OT-89A:
O-92UA:
GG0b27fi
ITT DIODE 125
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itt ol 170
Abstract: No abstract text available
Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch
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HAL114
HAL114S
HAL114UA
4bfiZ711
itt ol 170
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BUJ202
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T 0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ202A
BUJ202
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand Vces pulses up to 1700 V.
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BU2722AX
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ESM 498
Abstract: TRANSISTOR BU4522AF BU4522AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.
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BU4522AF
100-Pq/PD25C_
ESM 498
TRANSISTOR BU4522AF
BU4522AF
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PHP112
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors P-channel enhancement mode MOS transistor PHP112 FEATURES DESCRIPTION • High speed switching P-channel enhancement mode MOS transistor in an 8-pin plastic S 0 8 SOT96-1 package. • No secondary breakdown
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PHP112
OT96-1)
MAM11S
-1-25A
711Gfi2b
73CI1
PHP112
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
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BU2507AF
/PD25c
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bu4522ax
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.
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BU4522AX
16kHz
bu4522ax
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BU1507AX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
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BU1507AX
BU1507AX
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BSN3005
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005 FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g DESCRIPTION gate s source
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BSN3005
711002b
G11DD42
MBC846
7110flEb
BSN3005
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU1507DX
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philips bfq32
Abstract: BFQ32
Text: Product specification Philips Semiconductors 7 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE » ^ 3 / - 2 . 3 BFQ32 711üfl5b G045420 41D H P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband
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BFR96.
BFQ32
G045420
BFQ32/02
philips bfq32
BFQ32
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
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DD3DS35
BUK444-500B
bb53331
bbS3131
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