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    TRANSISTOR IMA Search Results

    TRANSISTOR IMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    LIMITING INRUSH CURRENT npn

    Abstract: No abstract text available
    Text: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from


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    PDF LP395 LP395 LIMITING INRUSH CURRENT npn

    Untitled

    Abstract: No abstract text available
    Text: MAPL-000978-0075LF MAPL-000978-0075LN M/A-COM Products Released, 23 Jun 09 LDMOS Pulsed Power Transistor 75W, 978 MHz, 400µs Pulse, 1% Duty Product Image Features • • • • • Gold LDMOS microwave power transistor Common source configuration Broadband Class AB operation


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    PDF MAPL-000978-0075LF MAPL-000978-0075LN

    DB978

    Abstract: No abstract text available
    Text: MAPL-000978-0075LF MAPL-000978-0075LN LDMOS Pulsed Power Transistor 75W, 978 MHz, 400µs Pulse, 1% Duty M/A-COM Products Released, 23 Jun 09 Product Image Features • • • • • Gold LDMOS microwave power transistor Common source configuration Broadband Class AB operation


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    PDF MAPL-000978-0075LF MAPL-000978-0075LN DB978

    Untitled

    Abstract: No abstract text available
    Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily


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    PDF 2N499

    rf amplifier marking catalog

    Abstract: No abstract text available
    Text: Philips Semiconductors; MZ0912B50Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MZ0912B50Y; NPN microwave power transistor General Description Blockdiagram


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    PDF MZ0912B50Y; MZ0912B50Y 01-Jul-98) rework/mz0912b50y rf amplifier marking catalog

    All similar transistor

    Abstract: transistor marking AM philips transistor marking
    Text: Philips Semiconductors; MX1011B200Y; Microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B200Y; Microwave power transistor General Description Blockdiagram Products & packages


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    PDF MX1011B200Y; MX1011B200Y 01-Jul-98) rework/mx1011b200y All similar transistor transistor marking AM philips transistor marking

    rf amplifier marking catalog

    Abstract: No abstract text available
    Text: Philips Semiconductors; MX0912B351Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX0912B351Y; NPN microwave power transistor General Description Blockdiagram


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    PDF MX0912B351Y; MX0912B351Y 01-Jul-98) rework/mx0912b351y rf amplifier marking catalog

    Philips top MARKING CODE

    Abstract: No abstract text available
    Text: Philips Semiconductors; MX1011B700Y; NPN microwave power transistor Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information MX1011B700Y; NPN microwave power transistor General Description Blockdiagram


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    PDF MX1011B700Y; MX1011B700Y 01-Jul-98) rework/mx1011b700y Philips top MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii .


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    PDF 6N135 6N136 ICPL4502 ICPL2530 ICPL2531 ICPL2533 6N137 ICPL2601 ICPL2611 ICPL2630

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    mc3356p

    Abstract: motorola transistor array 14 pin dip
    Text: g MOTOROLA — General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. GENERAL PURPOSE TRANSISTOR ARRAY


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    PDF MC3346 MC3346 mc3356p motorola transistor array 14 pin dip

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers


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    PDF BFR96 Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1

    2SK1198

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor


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    PDF 2SK1198 2SK1198 1988M

    2sj460

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


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    PDF 2SJ460 2SJ460

    2SJ460

    Abstract: MEI-1202 X10679E
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 DATA SHEET D EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION


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    PDF 2SJ460 2SJ460 MEI-1202 X10679E

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


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    PDF 2SK2541 2SK2541

    C10535* MANUAL NEC

    Abstract: 2SJ461 C10535E MEI-1202
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


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    PDF 2SJ461 2SJ461 C10535* MANUAL NEC C10535E MEI-1202

    2SJ460

    Abstract: MEI-1202
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


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    PDF 2SJ460 2SJ460 MEI-1202

    2SK2541

    Abstract: MEI-1202 MF-1134 NEC reliability 1995
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


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    PDF 2SK2541 2SK2541 25ndustrial MEI-1202 MF-1134 NEC reliability 1995

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    SQD65BB75

    Abstract: sqd65B
    Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.


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    PDF SQP65BB75 SQD65BB75 00DEE22 SQD65BB75 sqd65B

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR M O D U L E S - IS O L A T E D T Y P E SQD50ABKX) SQD50AB is a high speed, high power Darlington transistor designed for use in Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo=I000V, 5 2 ± 0 .3 6mir>. 6min,


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    PDF SQD50ABKX) SQD50AB I000V, SQD50AB100 DD0222D