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    TRANSISTOR IGNITION Search Results

    TRANSISTOR IGNITION Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IGNITION Datasheets Context Search

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    1N4001 transistor free

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
    Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


    Original     		PDF BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn

    BC337 rbe

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
    Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


    Original     		PDF BU323AP BU323AP r14525 BU323AP/D BC337 rbe BC337 figure 1N4001 BC337 BU323P diode 1N4001 voltage limitations

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    2STP535

    Abstract: ST DARLINGTON TRANSISTOR 2STP535FP alternator ic connection Alternator Voltage Regulator Darlington alternator voltage regulator schematic
    Text: 2STP535FP NPN power Darlington transistor Features • Monolithic Darlington transistor with integrated antiparallel collector-emitter diode ■ Very high DC current gain Applications ■ Electronic ignition ■ AC-DC motor control ■ Alternator regulator


    Original     		PDF 2STP535FP O-220FP 2STP535FP O-220FP 2STP535 ST DARLINGTON TRANSISTOR alternator ic connection Alternator Voltage Regulator Darlington alternator voltage regulator schematic

    BC337 figure

    Abstract: BU323A npn darlington transistor 150 watts 1N4001 BC337
    Text: MOTOROLA Order this document by BU323A/D SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR


    Original     		PDF BU323A/D* BU323A/D BC337 figure BU323A npn darlington transistor 150 watts 1N4001 BC337

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to


    Original     		PDF ISL9V3040D3S 300mJ, ISL9V3040D3S ISL9V3040D3SL-TA3-T ISL9V3040D3SG-TA3-T ISL9V3040D3SL-TF3-T ISL9V3040D3SG-TF3-T ISL9V3040D3SL-TQ2-T ISL9V3040D3SG-TQ2-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to


    Original     		PDF ISL9V3040D3S 300mJ, ISL9V3040D3S ISL9V3040D3SL-TA3-T ISL9V3040D3SG-TA3-T O-220 ISL9V3040D3SL-TF3-T ISL9V3040D3SG-TF3-T O-220F

    BU108

    Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:


    Original     		PDF BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773

    NT 407 F power transistor

    Abstract: NT 407 F TRANSISTOR ABC337 BU522B motorola 1N4148 1N4148 BC337
    Text: MOTOROLA Order this document by BU522B/D SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor.


    Original     		PDF BU522B/D* BU522B/D NT 407 F power transistor NT 407 F TRANSISTOR ABC337 BU522B motorola 1N4148 1N4148 BC337

    BUV90

    Abstract: darlington power transistor
    Text: Philips Semiconductors Product specification Silicon Diffused Darlington Power Transistor BUV90 GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.


    Original     		PDF BUV90 650tation BUV90 darlington power transistor

    10LC1

    Abstract: BUV90F CAR IGNITION
    Text: Philips Semiconductors Product specification Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.


    Original     		PDF BUV90F OT199 OT199 10LC1 BUV90F CAR IGNITION

    Untitled

    Abstract: No abstract text available
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


    Original     		PDF NTE2317 NTE2317

    motorola transistor ignition

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR


    OCR Scan     		PDF BU323AP 340D-01 motorola transistor ignition

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU323AP/D SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. •


    OCR Scan     		PDF BU323AP/D BU323AP BU323AP 340D-02 O-218

    BUK856-450IX

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener


    OCR Scan     		PDF BUK856-450IX T0220AB BUK856-450IX

    BU323A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU323A/D SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. •


    OCR Scan     		PDF BU323A/D BU323A O-204AA

    bu323a

    Abstract: motorola transistor ignition
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Ttansistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN


    OCR Scan     		PDF BU323A motorola transistor ignition

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    BUK854-500IS

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in automotive ignition applications, and other general purpose


    OCR Scan     		PDF BUK854-500IS T0220AB Limiting350 BUK854-500IS

    ba7 transistor

    Abstract: BUV90F lg system ic
    Text: Product specification Philips Semiconductors Silicon Diffused Darlington Power Transistor BUV90F GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.


    OCR Scan     		PDF BUV90F OT199 ThsS25 711DflBb OT199; 711Gfl2b 00777b0 ba7 transistor BUV90F lg system ic

    BUV90

    Abstract: 134 T31
    Text: Product specification Philips Semiconductors Silicon Diffused Darlington Power Transistor BUV90 GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.


    OCR Scan     		PDF BUV90 7110fl2b 711DflSb D777Sb BUV90 134 T31