2SC3678
Abstract: No abstract text available
Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A
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2SC3678
100max
800min
50typ
400mA
500mA
MT-100
2SC3678
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2SC5249
Abstract: FM20
Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A
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2SC5249
50typ
19max
600min
100max
O220F)
2SC5249
FM20
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2SC5249
Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A
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2SC5249
50typ
19max
600min
100max
O220F)
2SC5249
FM20
NPN Transistor 600V 0,2A
vbe 12v, vce 600v NPN Transistor
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A
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ZXTNS618MC
ZX3CDBS1M832
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2SD2583
Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS
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2SD2583
2SD2583
Audio Output Transistor Amplifier
transistor Ic 1A datasheet NPN
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Untitled
Abstract: No abstract text available
Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)
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2SC3678
100max
800min
50typ
MT-100
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FMMT493A
Abstract: FMMT493ATA FMMT493ATC
Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring
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FMMT493A
250mA
FMMT493ATA
FMMT493ATC
FMMT493A
FMMT493ATA
FMMT493ATC
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FMMT493ATA
Abstract: No abstract text available
Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring
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FMMT493A
250mA
FMMT493ATA
FMMT493ATC
FMMT452)
522-FMMT493ATA
FMMT493ATA
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FMMT493A
Abstract: FMMT493ATA FMMT493ATC
Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring
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FMMT493A
250mA
FMMT493ATA
FMMT493ATC
FMMT493A
FMMT493ATA
FMMT493ATC
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Untitled
Abstract: No abstract text available
Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring
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FMMT493A
250mA
FMMT493ATA
FMMT493ATC
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2SC4299
Abstract: No abstract text available
Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max
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2SC4299
FM100
100max
800min
50typ
2SC4299
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PDF
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2SC4299
Abstract: No abstract text available
Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max
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2SC4299
FM100
100max
800min
50typ
2SC4299
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2SC5239
Abstract: No abstract text available
Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 550 VEBO IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C)
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2SC5239
100max
550min
35typ
300mA
MT-25
2SC5239
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PDF
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Untitled
Abstract: No abstract text available
Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CDBS1M832
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ZXTP2041
Abstract: ic 4446 P41 sot23 NPN
Text: ZXTP2041F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2041F
-500mV
ZXTP2041F
ZXTP2041FTA
ZXTP2041FTC
ZXTP2041
ic 4446
P41 sot23 NPN
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A1 dual diode
Abstract: ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC
Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CDBS1M832
500mV
A1 dual diode
ZX3CDBS1M832
MLP832
ZX3CDBS1M832TA
ZX3CDBS1M832TC
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transistor A2
Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A
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ZXTNS618MC
150mV
500mV
DS31933
transistor A2
Marking Y1 SOT26
DFN3020
diodes transistor marking k2 dual
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A
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ZXTNS618MC
150mV
500mV
DFN3020B-8
DS31933
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making 2a sot23
Abstract: ZXTN2040F ZXTN2040FTA ZXTN2040FTC ZXTP2041F
Text: ZXTN2040F SOT23 40 volt NPN silicon planar medium power transistor Summary V BR CEO > 40V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTN2040F
500mV
ZXTP2041F
ZXTN2040FTA
ZXTN2040FTC
making 2a sot23
ZXTN2040F
ZXTN2040FTA
ZXTN2040FTC
ZXTP2041F
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transistor Ic 1A datasheet NPN
Abstract: 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A
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2SB679
transistor Ic 1A datasheet NPN
2SD689
2SB679
transistor Ic 1A datasheet
current amplifier note darlington
darlington 5v drive
IC 1A datasheet
NPN Transistor 1A 100V
medium power high voltage transistor
npn transistor 0.1A 100V
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Untitled
Abstract: No abstract text available
Text: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement
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FMMT491
500mW
FMMT591
FMMT491TA
D-81541
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2SC4557
Abstract: No abstract text available
Text: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 10(Pulse20) A hFE V 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A
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2SC4557
100max
Pulse20)
550min
105typ
50eristics
FM100
2SC4557
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TS16949
Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where
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ZXTN04120HFF
OT23F,
ZXTP05120HFF
ZXTN04120HFFTA
D-81541
TS16949
ZXTN04120HFF
ZXTN04120HFFTA
ZXTP05120HFF
darlington complementary 120v
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where
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ZXTN04120HFF
OT23F,
ZXTP05120HFF
ZXTN04120HFFTA
D-81541
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