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    TRANSISTOR I 3005D Search Results

    TRANSISTOR I 3005D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    E13005D

    Abstract: transistor 13005D transistor 3005D transistor I 3005D 13005d LO 13005D TRANSISTOR 13004D 13005D TRANSISTOR TR 13005D w 13005d
    Text: TE13004D • TE13005D Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in teg r a ted C - E -f r e e -w h e e l d io d e • H IG H S P E E D te c h n o lo g y • P la n a r p a ssiv a tio n •


    OCR Scan     		TE13004D TE13005D 13004D E13005D transistor 13005D transistor 3005D transistor I 3005D 13005d LO 13005D TRANSISTOR 13005D TRANSISTOR TR 13005D w 13005d PDF