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    TRANSISTOR HFE 400 1W Search Results

    TRANSISTOR HFE 400 1W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HFE 400 1W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCX658A

    Abstract: DSA003686
    Text: SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FCX658A ISSUE 1 – NOVEMBER 2000 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA C E APPLICATIONS * Telephone dialler circuits * Hook switches for modems


    Original     		PDF FCX658A 200mA FCX658A DSA003686

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FCX658A ISSUE 1 – NOVEMBER 2000 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA C E APPLICATIONS * Telephone dialler circuits * Hook switches for modems


    Original     		PDF FCX658A 200mA

    2N5401L

    Abstract: of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 1 * Collector-emitter voltage: VCEO = -150V *Total Power Dissipation: PD MAX =1W * High current gain SOT-89 *Pb-free plating product number:2N5401L


    Original     		PDF 2N5401 -150V OT-89 2N5401L 2N5401-AB3-R 2N5401L-AB3-R OT-89 QW-R208-040 2N5401L of pnp transistor 2n5401

    transistor HFE 400 1w

    Abstract: No abstract text available
    Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2328A KSA928A O-92L KSC2328A O-92-3 transistor HFE 400 1w

    200 watt audio ic

    Abstract: KSA928A-Y transistor HFE 400 1w
    Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSA928A KSC2328A O-92L EmiO-92 200 watt audio ic KSA928A-Y transistor HFE 400 1w

    2SD2071

    Abstract: 2SB1377 transistor HFE 400 1w
    Text: Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1377 Unit: mm 1.05 2.5±0.1 ±0.05 ● Low collector to emitter saturation voltage VCE sat . Output of 1W is obtained with a complementary pair with


    Original     		PDF 2SD2071 2SB1377 2SB1377. 2SD2071 2SB1377 transistor HFE 400 1w

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A 1W Mounted on Ceramic Substrate . C H Small Flat Package. G J B E Complementary to KTA1662. DIM A B C D E F G H J K D D K MAXIMUM RATING (Ta=25 )


    Original     		PDF KTC4374 KTA1662. 75itter 200mA 200mA,

    KTA1662

    Abstract: KTC4374
    Text: SEMICONDUCTOR KTC4374 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W Mounted on Ceramic Substrate . H Small Flat Package. G J B E Complementary to KTA1662. DIM A B C D E F G H J K D D K MAXIMUM RATING (Ta=25 )


    Original     		PDF KTC4374 KTA1662. 200mA 200mA, KTA1662 KTC4374

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KSA928A Features • • • Collector Power Dissipation: PC=1W 3 Watt Output Application Complement to KSC2328A PNP Epitaxial Silicon Transistor


    Original     		PDF KSA928A KSC2328A 100Adc, 10mAdc, 30Vdc

    transistor HFE 400 1w

    Abstract: KSA931
    Text: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSA931 KSC2331 O-92L transistor HFE 400 1w KSA931

    D882B

    Abstract: datasheet d882 B772 D882 B772B
    Text: D882B D882B Silicon NPN Epitaxial Transistor Description :The D882B is designed for use in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Features: ●Excellent hFE Linearity ●Complementary to B772B Chip Appearance


    Original     		PDF D882B D882B B772B 1100um 1100um 240um 240um 330um 260um datasheet d882 B772 D882 B772B

    B772B

    Abstract: B772 D882 datasheet d882 D882B
    Text: B772B B772B Silicon PNP Epitaxial Transistor Description :The B772B is designed for use in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Features: ●Excellent hFE Linearity ●Complementary to D882B Chip Appearance


    Original     		PDF B772B B772B D882B 1100um 1100um 240um 240um 330um 260um B772 D882 datasheet d882 D882B

    2SB698

    Abstract: 2SD734 transistor 2SD734 ITR08332 ITR08333 ITR08334 2SD734 G
    Text: Ordering number:ENN512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Features Package Dimensions • Audio 1W output. unit:mm 2003B [2SB698/2SD734] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5


    Original     		PDF ENN512F 2SB698/2SD734 2003B 2SB698/2SD734] 2SB698 2SB698 2SD734 transistor 2SD734 ITR08332 ITR08333 ITR08334 2SD734 G

    2SD734

    Abstract: transistor 2SD734 2SB698 ITR08332 ITR08333 ITR08334
    Text: Ordering number:ENN512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Features Package Dimensions Æ Audio 1W output. unit:mm 2003B [2SB698/2SD734] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5


    Original     		PDF ENN512F 2SB698/2SD734 2003B 2SB698/2SD734] 2SB698 2SD734 transistor 2SD734 2SB698 ITR08332 ITR08333 ITR08334

    KSA928A

    Abstract: KSC2328A
    Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2328A KSA928A O-92L KSA928A KSC2328A

    KSA928A

    Abstract: KSC2328A
    Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSA928A KSC2328A O-92L KSA928A KSC2328A

    NTE135A

    Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
    Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.


    Original     		PDF NTE109 NTE116 NTE123AP NTE125 NTE128P NTE2396 NTE2397 NTE2398 NTE5127A NTE5304 NTE135A NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159

    KSA928A

    Abstract: KSC2328A
    Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2328A KSA928A O-92L KSA928A KSC2328A

    KSA928A

    Abstract: KSC2328A KSC2328
    Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSC2328A KSA928A O-92L KSA928A KSC2328A KSC2328

    KSA928A

    Abstract: KSC2328A 5000 watt audio amplifier
    Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSA928A KSC2328A O-92L KSA928A KSC2328A 5000 watt audio amplifier

    KSA928A

    Abstract: KSC2328A
    Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSA928A KSC2328A O-92L KSA928A KSC2328A

    ztx658

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSU E 1 - APRIL 94_ FEATURES * 400 Volt V CE0 * 0.5 A m p continuous current * Ptot=1W att A P P L IC A T IO N S * Telephone dialler circuits E-Lina T 092 Compatible


    OCR Scan     		PDF ZTX658 atTamp25 ZTX688B lf-50mA, 50MHz ztx658

    b1260

    Abstract: KTB1260 KTD1898 sot89 "type name" J transistor
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB1260 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • 1W Mounted on Ceramic Substrate . • Small Flat Package. • Complementary to KFD1898. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KTB1260 KTD1898. 100mA --500mA, -50mA 30MHz b1260 KTB1260 KTD1898 sot89 "type name" J transistor

    ZTX758

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ _ FEATURES * 400 Volt VCE0 * 0.5 Am p continuous current * Ptot= 1W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO


    OCR Scan     		PDF -100nA -10mA* 175-C ZTX758